Flip-chip semiconductor optoelectronic device and method for fabricating the same

Abstract

A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.

What is claimed is: 
     
         1 . A flip-chip semiconductor optoelectronic device, comprising:
 a packaging substrate comprising a first surface, a second surface opposite to said first surface of said packaging substrate, a first bond pad formed on said first surface of said packaging substrate, a second bond pad formed on said first surface of said packaging substrate, a first bump formed on said first bond pad, and a second lump formed on said second bond pad;   a semiconductor light-emitting structure comprising a first surface and a second surf opposite to said first surface of said semiconductor light-emitting structure, an n-type electrode formed on said first surface of said semiconductor light-emitting structure, and a p-type electrode formed on said first surface of said semiconductor light-emitting structure, wherein said n-type electrode is electrically attached to said first bump and said p-type electrode is electrically attached to said second bump;   a dielectric layer disposed between said n-type electrode and said p-type electrode to electrically insulate said n-type electrode from said p-type electrode; and   a transparent adhesive material disposed between said first surface of said packaging substrate and said first surface of said semiconductor light-emitting structure, enclosing said first bond pad, said second bond pad, said first bump, and said second bump.   
     
     
         2 . The flip-chip semiconductor optoelectronic device of  claim 1 , wherein said packaging substrate is a printed circuit board, a bismaleimide triazine resin printed circuit board, a metal core printed circuit hoard, a flexible printed circuit board, a ceramic substrate, or a silicon substrate. 
     
     
         3 . The flip-chip semiconductor optoelectronic device of  claim 1 , wherein the material of said semiconductor light-emitting structure is Group III-V compound semiconductor. 
     
     
         4 . The flip-chip semiconductor optoelectronic device of  claim 1 , wherein the dielectric layer reduces the interference between the n-type electrode and the p-type electrode, and strengthens the light-emitting structure to avoid fracture. 
     
     
         5 . The flip-chip semiconductor optoelectronic device of  claim 1 , wherein the dielectric layer comprises silicon oxide, epoxy resin, silicon nitride, titanium oxide, or aluminum nitride. 
     
     
         6 . The flip-chip semiconductor optoelectronic device of  claim 1 , wherein the transparent adhesive material comprises epoxy resin, silicone or silicon nitride. 
     
     
         7 . The flip-chip semiconductor optoelectronic device of  claim 1 , wherein the transparent adhesive material is sandwiched between the dielectric layer and the packaging substrate. 
     
     
         8 . The flip-chip semiconductor optoelectronic device of  claim 1 , wherein the dielectric layer is sealed by the transparent adhesive material within a space defined by the light-emitting structure, the n-type electrode, and the p-type electrode.