Inventor · disambiguated record
Wen-Yu Lin
Also filed as: LIN WEN-YU
36 granted patents·27 pending applications·52 citations·filing 2004–2024
95Inventor score
Files withADVANCED OPTOELECTRONIC TECH17HUANG SHIH-CHENG6DELTA ELECTRONICS SHANGHAI CO5UNIMICRON TECHNOLOGY CORP5XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD5
Top patents by PatentIndex Score
63 records- 0192US8470621B2Method for fabricating a flip-chip semiconductor optoelectronic deviceKUO CHESTER·Filed 2010·Granted Jun 25, 2013·19 cites·14 claims
- 0288US12159749B2Transformer module and power moduleDELTA ELECTRONICS SHANGHAI CO·Filed 2023·Granted Dec 3, 2024·0 cites·19 claims
- 0388US12106895B2Transformer module and power moduleDELTA ELECTRONICS SHANGHAI CO·Filed 2023·Granted Oct 1, 2024·0 cites·17 claims
- 0488US2024047135A1Transformer module and power moduleDELTA ELECTRONICS SHANGHAI CO·Filed 2023·Application pending·0 cites
- 0585US11943877B2Circuit board structure and manufacturing method thereofUNIMICRON TECHNOLOGY CORP·Filed 2022·Granted Mar 26, 2024·1 cites·6 claims
- 0684US11842847B2Transformer module and power moduleDELTA ELECTRONICS SHANGHAI CO·Filed 2022·Granted Dec 12, 2023·0 cites·17 claims
- 0778US8202752B2Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the deviceHUANG SHIH CHENG·Filed 2009·Granted Jun 19, 2012·5 cites·9 claims
- 0877US9082934B2Semiconductor optoelectronic structure with increased light extraction efficiencyADVANCED OPTOELECTRONIC TECH·Filed 2013·Granted Jul 14, 2015·2 cites·14 claims
- 0975US12442968B2Electronic deviceINNOLUX CORP·Filed 2024·Granted Oct 14, 2025·0 cites·6 claims
- 1073US11450480B2Transformer module and power moduleDELTA ELECTRONICS SHANGHAI CO·Filed 2019·Granted Sep 20, 2022·0 cites·22 claims
- 1172US12147069B2Backlight moduleINNOLUX CORP·Filed 2023·Granted Nov 19, 2024·0 cites·18 claims
- 1270US8093082B2Method of fabricating photoelectric device of group III nitride semiconductor and structure thereofHUANG SHIH CHENG·Filed 2009·Granted Jan 10, 2012·4 cites·4 claims
- 1369US8574939B2Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereofHUANG SHIH CHENG·Filed 2010·Granted Nov 5, 2013·1 cites·13 claims
- 1467US7824942B2Method of fabricating photoelectric device of group III nitride semiconductor and structure thereofZHANJING TECHNOLOGY SHEN ZHEN·Filed 2009·Granted Nov 2, 2010·3 cites·14 claims
- 1565US7134767B2Structure for improving backlight uniformityCHUNGHWA PICTURE TUBES LTD·Filed 2004·Granted Nov 14, 2006·9 cites·10 claims
- 1664US11870010B2Light-emitting diodeXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 1764US8581283B2Photoelectric device having group III nitride semiconductorTU PO-MIN·Filed 2011·Granted Nov 12, 2013·1 cites·12 claims
- 1863US7943494B2Method for blocking dislocation propagation of semiconductorADVANCED OPTOELECTRONIC TECH·Filed 2009·Granted May 17, 2011·1 cites·18 claims
- 1961US8217400B2Polychromatic light emitting diode device having wavelength conversion layer made of semiconductor and method for manufacturing the sameHUANG SHIH CHENG·Filed 2009·Granted Jul 10, 2012·1 cites·9 claims
- 2058US12255279B2Light-emitting diode package structure and manufacturing method thereofUNIMICRON TECHNOLOGY CORP·Filed 2022·Granted Mar 18, 2025·0 cites·5 claims
- 2158US8513696B2Lateral thermal dissipation LED and fabrication method thereofTU PO MIN·Filed 2010·Granted Aug 20, 2013·1 cites·9 claims
- 2257US12506056B2Electronic package structure and manufacturing method thereofUNIMICRON TECHNOLOGY CORP·Filed 2022·Granted Dec 23, 2025·0 cites·19 claims
- 2357US11296256B2Light-emitting diodeXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 2456US12218017B2Glass carrier having protection structure and manufacturing method thereofUNIMICRON TECHNOLOGY CORP·Filed 2022·Granted Feb 4, 2025·0 cites·5 claims
- 2555US8580590B2Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductorHUANG SHIH-CHENG·Filed 2012·Granted Nov 12, 2013·0 cites·16 claims
- 2655US8148246B2Method for separating semiconductor layer from substrateLIN WEN YU·Filed 2009·Granted Apr 3, 2012·1 cites·13 claims
- 2754US2009121214A1Iii-nitride semiconductor light-emitting device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2008·Application pending·0 cites
- 2852US8226286B2Edge-lit backlight moduleLIN WEN-YU·Filed 2010·Granted Jul 24, 2012·1 cites·10 claims
- 2951US8866161B2Light-emitting semiconductor device having sub-structures for reducing defects of dislocation thereinHUANG SHIH-CHENG·Filed 2011·Granted Oct 21, 2014·0 cites·6 claims
- 3050US9312438B2Nitride light emitting diode and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2015·Granted Apr 12, 2016·0 cites·12 claims
- 3150US2023178520A1Light-emitting diode package and manufacturing method thereofUNIMICRON TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 3250US2013248922A1Flip-chip semiconductor optoelectronic device and method for fabricating the sameADVANCED OPTOELECTRONIC TECH·Filed 2013·Application pending·0 cites
- 3349US2025072074A1Superlattice composite structure and semiconductor laminate structureWAFER WORKS CORP·Filed 2023·Application pending·0 cites
- 3449US2010170936A1Method for bonding two materialsADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3548US10431713B2Nitride underlayer and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2017·Granted Oct 1, 2019·0 cites·9 claims
- 3648US2010019263A1Rough structure of optoelectronic device and fabrication thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3748US2010019256A1Light emitting device with electron blocking combination layerADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3848US2010032649A1Light emitting device and reduced polarization interlayer thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3948US2009321780A1Gallium nitride-based light emitting device with roughened surface and fabricating method thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 4047US11538960B2Epitaxial light emitting structure and light emitting diodeXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·18 claims
- 4147US2009166650A1Light-emitting device of group iii nitride-based semiconductor and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2008·Application pending·0 cites
- 4247US2011163295A1Semiconductor with low dislocationADVANCED OPTOELECTRONIC TECH·Filed 2011·Application pending·0 cites
- 4347US2009278160A1Radiation emitting semiconductor deviceADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 4447US2011210312A1Iii-nitride semiconductor light-emitting device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2011·Application pending·0 cites
- 4547US2013248875A1Light-emitting diode comprising stacked-type scattering layer and manufacturing method thereofFORMOSA EPITAXY INC·Filed 2013·Application pending·0 cites
- 4647US2013248901A1Light-emitting diode comprising dielectric material layer and manufacturing method thereofFORMOSA EPITAXY INC·Filed 2013·Application pending·0 cites
- 4746US12500031B2Magnetic component and magnetic body thereofCYNTEC CO LTD·Filed 2021·Granted Dec 16, 2025·0 cites·9 claims
- 4846US2010295084A1Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure ThereofADVANCED OPTOELECTRONIC TECH·Filed 2010·Application pending·0 cites
- 4945US8174842B2Light-emitting diode moduleOU YANG HUNG-YI·Filed 2009·Granted May 8, 2012·2 cites·2 claims
- 5044US10418518B2Nitride underlayer and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2017·Granted Sep 17, 2019·0 cites·9 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →