Semiconductor with low dislocation

Abstract

A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer.

1 . A semiconductor, comprising:
 a semiconductor layer;   a plurality of recesses formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs;   a blocking layer filled in each recess; and   a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer and laterally overgrown toward areas of the recesses for overlaying the blocking layer.   
     
     
         2 . The semiconductor of  claim 1 , wherein the material of the blocking layer is dielectric, and is selected from the group consisting of magnesium nitride (Mg x N y ), silicon nitride (Si x N y ), silicon oxide (Si x O y ), titanium oxide (Ti x O y ), zirconium oxide (Zr x O y ), hafnium oxide (Hf x O y ), tantalum oxide (Ta x O y ), silicon nitride (SiN), and silicon oxide (SiO). 
     
     
         3 . The semiconductor of  claim 1 , further comprising a substrate for growth of the semiconductor layer. 
     
     
         4 . The semiconductor of  claim 3 , wherein the material of the substrate is sapphire (Al 2 O 3 ), silicon carbide (SiC), AlLiO 2 , LiGaO 2 , silicon (Si), gallium nitride (GaN), zinc oxide (ZnO), aluminum zinc oxide (AlZnO), gallium arsenide (GaAs), gallium phosphide (GaP), gallium antimonide (GaSb), indium phosphide (InP), indium arsenide (InAs), or zinc selenide (ZnSe). 
     
     
         5 . The semiconductor of  claim 3 , further comprising a buffer layer formed between the substrate and the semiconductor layer. 
     
     
         6 . The semiconductor of  claim 5 , wherein the buffer layer is deposited in an epitaxial equipment selected from one of MOCVD equipment and MBE equipment. 
     
     
         7 . A light emitting diode, comprising:
 a semiconductor layer   a plurality of recesses formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs;   a blocking layer filled in each recess;   a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer and laterally overgrown toward areas of the recesses for overlaying the blocking layer; and   a lighting structure formed on a surface of the re-epitaxial semiconductor layer.   
     
     
         8 . The light emitting diode of  claim 7 , wherein the lighting structure comprises an N-type semiconductor conductive layer, an active layer, and a P-type semiconductor conductive layer, and the active layer is between the N-type semiconductor conductive layer and the P-type semiconductor conductive layer. 
     
     
         9 . The light emitting diode of  claim 8 , wherein the lighting structure further comprises a P-type semiconductor electron barrier layer formed between the active layer and the P-type semiconductor conductive layer. 
     
     
         10 . The light emitting diode of  claim 7 , wherein the material of the blocking layer is dielectric, and is selected from the group consisting of magnesium nitride (Mg x N y ), silicon nitride (Si x N y ), silicon oxide (Si x O y ), titanium oxide (Ti x O y ), zirconium oxide (Zr x O y ), hafnium oxide (Hf x O y ), tantalum oxide (Ta x O y ), silicon nitride (SiN), and silicon oxide (SiO). 
     
     
         11 . The light emitting diode of  claim 7 , further comprising a substrate for growth of the semiconductor layer. 
     
     
         12 . The light emitting diode of  claim 11 , wherein the material of the substrate is sapphire (Al 2 O 3 ), silicon carbide (SiC), AlLiO 2 , LiGaO 2 , silicon (Si), gallium nitride (GaN), zinc oxide (ZnO), aluminum zinc oxide (AlZnO), gallium arsenide (GaAs), gallium phosphide (GaP), gallium antimonide (GaSb), indium phosphide (InP), indium arsenide (InAs), or zinc selenide (ZnSe). 
     
     
         13 . The light emitting diode of  claim 11 , further comprising a buffer layer formed between the substrate and the semiconductor layer. 
     
     
         14 . The light emitting diode of  claim 13 , wherein the buffer layer is deposited in an epitaxial equipment selected from one of MOCVD equipment and MBE equipment.