Inventor · disambiguated record
Peng Wu
Also filed as: WU PENG · WU PENG YI
33 granted patents·26 pending applications·100 citations·filing 2001–2024
95Inventor score
Files withADVANCED OPTOELECTRONIC TECH16BOE TECHNOLOGY GROUP CO LTD6HUANG SHIH-CHENG6SHOWA DENKO KK6AVARY HOLDING SHENZHEN CO LTD4
Top patents by PatentIndex Score
59 records- 0192US8470621B2Method for fabricating a flip-chip semiconductor optoelectronic deviceKUO CHESTER·Filed 2010·Granted Jun 25, 2013·19 cites·14 claims
- 0287US6759540B2Crystalline MWW-type titanosilicate catalyst for producing oxidized compound, production process for the catalyst, and process for producing oxidized compound by using the catalystSHOWA DENKO KK·Filed 2001·Granted Jul 6, 2004·27 cites·11 claims
- 0384US7326401B2MWW type zeolite substance, precursor substance therefor, and process for producing these substancesSHOWA DENKO KK·Filed 2003·Granted Feb 5, 2008·27 cites·25 claims
- 0483US10636816B2Thin film transistor and manufacturing method thereof, array substrate and display panelBOE TECHNOLOGY GROUP CO LTD·Filed 2017·Granted Apr 28, 2020·3 cites·15 claims
- 0578US8202752B2Method for fabricating light emitting semiconductor device for reducing defects of dislocation in the deviceHUANG SHIH CHENG·Filed 2009·Granted Jun 19, 2012·5 cites·9 claims
- 0677US9082934B2Semiconductor optoelectronic structure with increased light extraction efficiencyADVANCED OPTOELECTRONIC TECH·Filed 2013·Granted Jul 14, 2015·2 cites·14 claims
- 0775US10186464B2Array substrate motherboard, array substrate and method of manufacturing the same, and display deviceBOE TECHNOLOGY GROUP CO LTD·Filed 2016·Granted Jan 22, 2019·2 cites·19 claims
- 0870US8093082B2Method of fabricating photoelectric device of group III nitride semiconductor and structure thereofHUANG SHIH CHENG·Filed 2009·Granted Jan 10, 2012·4 cites·4 claims
- 0969US11160166B2Printed circuit board with high-capacity copper circuitAVARY HOLDING SHENZHEN CO LTD·Filed 2018·Granted Oct 26, 2021·1 cites·11 claims
- 1069US8574939B2Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereofHUANG SHIH CHENG·Filed 2010·Granted Nov 5, 2013·1 cites·13 claims
- 1164US12080808B2Cross-coupled gated tunnel diode (XTD) device with increased peak-to-valley current ratio (PVCR)PURDUE RESEARCH FOUNDATION·Filed 2022·Granted Sep 3, 2024·0 cites·21 claims
- 1264US9708238B2Cycloalkane oxidation catalysts and method to produce alcohols and ketonesDECAMPO FLORYAN·Filed 2012·Granted Jul 18, 2017·1 cites·9 claims
- 1363US7943494B2Method for blocking dislocation propagation of semiconductorADVANCED OPTOELECTRONIC TECH·Filed 2009·Granted May 17, 2011·1 cites·18 claims
- 1461US8217400B2Polychromatic light emitting diode device having wavelength conversion layer made of semiconductor and method for manufacturing the sameHUANG SHIH CHENG·Filed 2009·Granted Jul 10, 2012·1 cites·9 claims
- 1559US11233070B2Thin film transistor and manufacturing method thereof, array substrate and display panelHEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·15 claims
- 1659US7323154B2Titanosilicate, process for its production, and its use in producing oxidized compoundSHOWA DENKO KK·Filed 2003·Granted Jan 29, 2008·3 cites·33 claims
- 1758US11584692B2Zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate RETa/NbO4 ceramic powder and preparation method thereofUNIV KUNMING SCIENCE & TECHNOLOGY·Filed 2019·Granted Feb 21, 2023·0 cites·10 claims
- 1858US8513696B2Lateral thermal dissipation LED and fabrication method thereofTU PO MIN·Filed 2010·Granted Aug 20, 2013·1 cites·9 claims
- 1957US11582872B2Circuit boardAVARY HOLDING SHENZHEN CO LTD·Filed 2019·Granted Feb 14, 2023·0 cites·7 claims
- 2056US12269777B2High-entropy rare earth-toughened tantalate ceramic and preparation method thereforUNIV KUNMING SCIENCE & TECHNOLOGY·Filed 2019·Granted Apr 8, 2025·0 cites·14 claims
- 2156US12034070B2Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Jul 9, 2024·0 cites·10 claims
- 2256US7560094B2Modified layered metallosilicate material and production process thereofSHOWA DENKO KK·Filed 2004·Granted Jul 14, 2009·2 cites·33 claims
- 2355US12159906B2Semiconductor device and fabrication method thereofINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Dec 3, 2024·0 cites·14 claims
- 2455US8580590B2Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductorHUANG SHIH-CHENG·Filed 2012·Granted Nov 12, 2013·0 cites·16 claims
- 2555US2024342063A1Amorphous calcium phosphate gel, preparation method and use thereofYunnan baiyao group health products co ltd·Filed 2023·Application pending·0 cites
- 2654US12223866B2Display substrate, test method for the same and display deviceHEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
- 2754US9977279B2Color filter substrate and manufacturing method thereof, and display deviceBOE TECHNOLOGY GROUP CO LTD·Filed 2016·Granted May 22, 2018·0 cites·11 claims
- 2854US2009121214A1Iii-nitride semiconductor light-emitting device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2008·Application pending·0 cites
- 2953US11942521B2Epitaxial layers with discontinued aluminium content for III-nitride semiconductorINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2020·Granted Mar 26, 2024·0 cites·18 claims
- 3053US10971104B2Shift register and method for driving the same, gate driving circuit, and display deviceHEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2020·Granted Apr 6, 2021·0 cites·19 claims
- 3152US9907167B1Method for manufacturing a printed circuit board with high-capacity copper circuitAVARY HOLDING SHENZHEN CO LTD·Filed 2016·Granted Feb 27, 2018·0 cites·10 claims
- 3251US8866161B2Light-emitting semiconductor device having sub-structures for reducing defects of dislocation thereinHUANG SHIH-CHENG·Filed 2011·Granted Oct 21, 2014·0 cites·6 claims
- 3351US2018317325A1Circuit board and method for manufacturing the sameAVARY HOLDING SHENZHEN CO LTD·Filed 2017·Application pending·0 cites
- 3450US2013248922A1Flip-chip semiconductor optoelectronic device and method for fabricating the sameADVANCED OPTOELECTRONIC TECH·Filed 2013·Application pending·0 cites
- 3549US2020387018A1Liquid crystal display panel, fabrication method therefor and display deviceHEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2019·Application pending·0 cites
- 3649US2010170936A1Method for bonding two materialsADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3748US2010019263A1Rough structure of optoelectronic device and fabrication thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3848US2010019256A1Light emitting device with electron blocking combination layerADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 3948US2004092757A1Crystalline MWW-type titanosilicate catalyst for producing oxidized compound, production process for the catalyst, and process for producing oxidized compound by using the catalystSHOWA DENKO KK·Filed 2003·Application pending·0 cites
- 4048US2010032649A1Light emitting device and reduced polarization interlayer thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 4148US2025227947A1Nitride-based semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 4248US2009321780A1Gallium nitride-based light emitting device with roughened surface and fabricating method thereofADVANCED OPTOELECTRONIC TECH·Filed 2009·Application pending·0 cites
- 4347US2022376059A1Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2020·Application pending·0 cites
- 4447US2009166650A1Light-emitting device of group iii nitride-based semiconductor and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2008·Application pending·0 cites
- 4547US2011163295A1Semiconductor with low dislocationADVANCED OPTOELECTRONIC TECH·Filed 2011·Application pending·0 cites
- 4647US2025311340A1Nitride-based semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD·Filed 2022·Application pending·0 cites
- 4747US2011210312A1Iii-nitride semiconductor light-emitting device and manufacturing method thereofADVANCED OPTOELECTRONIC TECH·Filed 2011·Application pending·0 cites
- 4846US10290277B2Reset circuit, shift register circuit, gate driving circuit, display apparatus, and driving methodBOE TECHNOLOGY GROUP CO LTD·Filed 2017·Granted May 14, 2019·0 cites·13 claims
- 4944US2022413021A1Current signal segmentation algorithmJiangsu electric power information technology co ltd·Filed 2020·Application pending·0 cites
- 5042US2004034258A1Crystalline MWW-type titanosilicate catalyst for producing oxidized compound, production process for the catalyst, and process for producing oxidized compound by using the catalystSHOWA DENKO KK·Filed 2003·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →