Inventor · disambiguated record
Shinsuke Fujiwara
Also filed as: FUJIWARA SHINSUKE
61 granted patents·38 pending applications·292 citations·filing 1984–2017
98Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES47FUJIWARA SHINSUKE12NISHIGUCHI TARO8HORI TSUTOMU4NIPPON DENKI HOME ELECTRONICS4
Top patents by PatentIndex Score
99 records- 0193US7964477B2Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jun 21, 2011·10 cites·6 claims
- 0292US7998836B1Method for fabricating gallium nitride based semiconductor electronic deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Aug 16, 2011·16 cites·20 claims
- 0390US8435866B2Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Granted May 7, 2013·11 cites·14 claims
- 0488US8586998B2Silicon carbide substrate manufacturing method and silicon carbide substrateINOUE HIROKI·Filed 2012·Granted Nov 19, 2013·8 cites·2 claims
- 0588US6858869B2White color light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Feb 22, 2005·44 cites·8 claims
- 0685US8823142B2GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)SUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 2, 2014·5 cites·3 claims
- 0785US8524575B2Group III nitride crystal and method for producing the sameUEMATSU KOJI·Filed 2011·Granted Sep 3, 2013·5 cites·8 claims
- 0884US8697564B2Method of manufacturing GaN-based filmFUJIWARA SHINSUKE·Filed 2011·Granted Apr 15, 2014·2 cites·4 claims
- 0984US4611939ASheet feeding device for an impact-type printerNIPPON DENKI HOME ELECTRONICS·Filed 1984·Granted Sep 16, 1986·30 cites·7 claims
- 1083US8598685B2GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereofFUJIWARA SHINSUKE·Filed 2010·Granted Dec 3, 2013·5 cites·15 claims
- 1182US8642153B2Single crystal silicon carbide substrate and method of manufacturing the sameHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·2 cites·5 claims
- 1280US8501592B2Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrateFUJIWARA SHINSUKE·Filed 2011·Granted Aug 6, 2013·1 cites·22 claims
- 1380USD651992SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·26 cites·1 claims
- 1479US8592289B2Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide waferHASHIMOTO SHIN·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 1579USD651991SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·25 cites·1 claims
- 1678US9255344B2Silicon carbide substrate and method of manufacturing the sameHARADA SHIN·Filed 2012·Granted Feb 9, 2016·3 cites·13 claims
- 1776US7892513B2Group III nitride crystal and method of its growthSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 22, 2011·2 cites·14 claims
- 1876US7129526B2White color light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Oct 31, 2006·18 cites·4 claims
- 1975US8361226B2III-nitride single-crystal growth methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jan 29, 2013·2 cites·10 claims
- 2075US8168515B2Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Granted May 1, 2012·3 cites·17 claims
- 2174USD655256SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Mar 6, 2012·20 cites·1 claims
- 2273US8415180B2Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical deviceHASHIMOTO SHIN·Filed 2010·Granted Apr 9, 2013·2 cites·24 claims
- 2368US8679955B2Method for forming epitaxial wafer and method for fabricating semiconductor deviceHASHIMOTO SHIN·Filed 2010·Granted Mar 25, 2014·2 cites·8 claims
- 2468US4930916APaper feederNIPPON DENKI HOME ELECTRONICS·Filed 1988·Granted Jun 5, 1990·15 cites·5 claims
- 2567US8147612B2Method for manufacturing gallium nitride crystal and gallium nitride waferUEMURA TOMOKI·Filed 2007·Granted Apr 3, 2012·3 cites·40 claims
- 2666US8697550B2Method of manufacturing GaN-based filmSATOH ISSEI·Filed 2011·Granted Apr 15, 2014·2 cites·7 claims
- 2766US8574364B2GaN-crystal free-standing substrate and method for producing the sameFUJIWARA SHINSUKE·Filed 2011·Granted Nov 5, 2013·1 cites·4 claims
- 2863US7232555B2AIGaInN single-crystal waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jun 19, 2007·1 cites·7 claims
- 2961US8715414B2Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial waferSATOH ISSEI·Filed 2009·Granted May 6, 2014·1 cites·9 claims
- 3061US2009267190A1Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the SubstrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 3160US9368568B2Group III nitride crystal substrates and group III nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 14, 2016·0 cites·3 claims
- 3260US2011215440A1Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor DeviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 3358US8357597B2Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 22, 2013·0 cites·3 claims
- 3457US9450054B2Dislocation in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 20, 2016·0 cites·14 claims
- 3557US8847363B2Method for producing group III nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 30, 2014·0 cites·3 claims
- 3657US8642154B2Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingotHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·1 cites·6 claims
- 3756US9583571B2Dislocation in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 28, 2017·0 cites·14 claims
- 3855US9153742B2GaN-crystal free-standing substrate and method for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Oct 6, 2015·0 cites·4 claims
- 3955US8963166B2III nitride crystal substrate and light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Feb 24, 2015·0 cites·4 claims
- 4055US8546166B2III nitride crystal substrate, and light-emitting device and method of its manufactureFUJIWARA SHINSUKE·Filed 2008·Granted Oct 1, 2013·0 cites·6 claims
- 4154US9279194B2Method of growing III-nitride crystalYOSHIDA HIROAKI·Filed 2009·Granted Mar 8, 2016·0 cites·5 claims
- 4254US8912550B2Dislocations in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Dec 16, 2014·0 cites·14 claims
- 4354US8540817B2Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial waferSATOH ISSEI·Filed 2009·Granted Sep 24, 2013·0 cites·4 claims
- 4454US2008299375A1ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 4553US9631296B2Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 25, 2017·0 cites·5 claims
- 4653US8937339B2Si(1-V-W-X)CWAlXNV substrate, and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Jan 20, 2015·0 cites·2 claims
- 4753US8476086B2Semiconductor device and method of its manufactureFUJIWARA SHINSUKE·Filed 2007·Granted Jul 2, 2013·0 cites·9 claims
- 4853US2013327265A1Method for producing silicon carbide crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 4952US8962365B2Method of manufacturing GaN-based film and composite substrate used thereforSATOH ISSEI·Filed 2011·Granted Feb 24, 2015·0 cites·6 claims
- 5052US8377204B2Group III nitride single crystal and method of its growthSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Feb 19, 2013·0 cites·1 claims
Showing the top 50 of 99 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →