Inventor · disambiguated record
Shin Hiyama
Also filed as: HIYAMA SHIN
11 granted patents·14 pending applications·15 citations·filing 1998–2024
84Inventor score
Files withHITACHI INT ELECTRIC INC13KOKUSAI ELECTRIC CORP8ABURATANI YUKINORI1CENTRAL GLASS CO LTD1KOKUSAI ELECTRIC CO LTD1
Top patents by PatentIndex Score
25 records- 0194US11101111B2Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2020·Granted Aug 24, 2021·3 cites·12 claims
- 0289US10763084B2Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2018·Granted Sep 1, 2020·4 cites·10 claims
- 0386US12505989B2Substrate processing apparatus, and method of manufacturing semiconductor deviceKOKUSAI ELECTRIC CORP·Filed 2024·Granted Dec 23, 2025·0 cites·14 claims
- 0480US10153153B2Method for removing adhering matter and dry etching methodCENTRAL GLASS CO LTD·Filed 2017·Granted Dec 11, 2018·3 cites·21 claims
- 0580US9911580B2Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatusYANAI HIDEHIRO·Filed 2011·Granted Mar 6, 2018·5 cites·17 claims
- 0675US11948778B2Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2021·Granted Apr 2, 2024·0 cites·13 claims
- 0760US2024321612A1Substrate processing apparatus, substrate checking method, method of manufacturing semiconductor device and non-transitory computer-readable recording mediumKOKUSAI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 0857US2024087937A1Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording mediumKOKUSAI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 0957US2023386871A1Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording mediumKOKUSAI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 1051US2022208587A1Substrate cooling unit, substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and non-transitory computer-readable recording mediumKOKUSAI ELECTRIC CORP·Filed 2022·Application pending·0 cites
- 1147US10121651B2Method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2017·Granted Nov 6, 2018·0 cites·11 claims
- 1246US2009176381A1Method of manufacturing semiconductor device and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2008·Application pending·0 cites
- 1345US11424146B2Substrate processing apparatus and temperature measurement unitKOKUSAI ELECTRIC CORP·Filed 2018·Granted Aug 23, 2022·0 cites·13 claims
- 1445US2009093124A1Method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2008·Application pending·0 cites
- 1543US10014171B2Method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2017·Granted Jul 3, 2018·0 cites·3 claims
- 1643US2014235068A1Method of manufacturing semiconductor device, apparatus for manufacturing semiconductor device, and non-transitory computer-readable recording mediumHITACHI INT ELECTRIC INC·Filed 2014·Application pending·0 cites
- 1741US2016211151A1Substrate processing apparatus and method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2013·Application pending·0 cites
- 1840US9082797B2Substrate processing apparatus and method of manufacturing semiconductor deviceABURATANI YUKINORI·Filed 2012·Granted Jul 14, 2015·0 cites·12 claims
- 1937US2013019894A1Plasma processing method and plasma ashing apparatusHITACHI INT ELECTRIC INC·Filed 2012·Application pending·0 cites
- 2036US2002192984A1Method for manufacturing semiconductor device, method for processing substrate, and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2002·Application pending·0 cites
- 2135US2010330773A1Substrate processing method and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2010·Application pending·0 cites
- 2234US10403478B2Plasma processing apparatus and method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2015·Granted Sep 3, 2019·0 cites·10 claims
- 2334US2016155630A1Substrate processing apparatus, method for manufacturing semiconductor device, and recording mediumHITACHI INT ELECTRIC INC·Filed 2016·Application pending·0 cites
- 2433US2016013053A1Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording MediumHITACHI INT ELECTRIC INC·Filed 2015·Application pending·0 cites
- 2527US2003205202A1Plasma cvd deviceKOKUSAI ELECTRIC CO LTD·Filed 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →