Inventor · disambiguated record
Shuuichi Ishizuka
Also filed as: ISHIZUKA SHUUICHI
6 granted patents·4 pending applications·22 citations·filing 2001–2010
78Inventor score
Top patents by PatentIndex Score
10 records- 0186US7674722B2Method of forming gate insulating film, semiconductor device and computer recording mediumTOKYO ELECTRON LTD·Filed 2005·Granted Mar 9, 2010·11 cites·7 claims
- 0279US7695763B2Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrateTOKYO ELECTRON LTD·Filed 2005·Granted Apr 13, 2010·6 cites·14 claims
- 0367US8394231B2Plasma process device and plasma process methodTAKATSUKI KOICHI·Filed 2007·Granted Mar 12, 2013·3 cites·18 claims
- 0463US7915177B2Method of forming gate insulation film, semiconductor device, and computer recording mediumTOYKO ELECTRON LTD·Filed 2010·Granted Mar 29, 2011·1 cites·8 claims
- 0557US8608901B2Process chamber cleaning method in substrate processing apparatus, substrate processing apparatus, and substrate processing methodISHIZUKA SHUUICHI·Filed 2010·Granted Dec 17, 2013·1 cites·18 claims
- 0643US7842621B2Method of measuring nitrogen concentration, method of forming silicon oxynitride film, and method of manufacturing semiconductor device.TOKYO ELECTRON LTD·Filed 2007·Granted Nov 30, 2010·0 cites·20 claims
- 0741US2010239781A1Method for in-chamber preprocessing in plasma nitridation processing, plasma processing method, and plasma processing apparatusSANO MASAKI·Filed 2008·Application pending·0 cites
- 0838US2004065344A1Processing apparatus and cleaning methodFiled 2001·Application pending·0 cites
- 0938US2009239364A1Method for forming insulating film and method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 1037US2004127033A1Plasma processing device and plasma processing methodFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →