Processing apparatus and cleaning method

Abstract

Provided is a parallel-plate-type processing apparatus ( 10 ), which performs plasma CVD and includes a chamber ( 11 ) to be cleaned. To perform cleaning of the chamber ( 11 ), plasma of a gas including fluorine is generated outside the chamber ( 11 ), and supplied into the chamber ( 11 ). During the cleaning, an RF power is applied to electrode plates ( 12, 17 ) inside the chamber ( 11 ).

1 . A processing apparatus ( 10 ) comprising: 
 a chamber ( 11 );    a gas source (SA) for supplying a gas for cleaning inside of said chamber ( 11 );    a gas line (L 1 ) for introducing the gas supplied from said gas source (SA) into said chamber ( 11 );    an activator ( 12 ) which is prepared in said gas line (L 1 ) and activates the gas supplied from said gas source (SA); and    at least three gas inlets ( 28 ) which are provided at a side wall of said chamber ( 11 ) and connected to said gas line (L 1 ).    
     
     
         2 . The processing apparatus ( 10 ) according to  claim 1 , wherein said at least three gas inlets ( 28 ) are provided at equal intervals.  
     
     
         3 . The processing apparatus ( 10 ) according to  claim 1 , wherein said processing apparatus ( 10 ) includes a plasma generation mechanism for providing a target object with plasma processing in said chamber ( 11 ).  
     
     
         4 . The processing apparatus ( 10 ) according to  claim 1 , wherein said activator ( 12 ) generates plasma of the gas.  
     
     
         5 . A processing apparatus ( 10 ) comprising: 
 a chamber ( 11 );    a gas source (SA) for supplying a gas for cleaning inside of said chamber ( 11 );    a gas line (L 1 ) for introducing the gas supplied from said gas source (SA) into said chamber ( 11 );    an activator ( 12 ) which is prepared in said gas line (L 1 ) and activates the gas supplied from said gas source (SA); and    a gas inlet ( 28 ) which is provided on a surface of said chamber ( 11 ) and connected to said gas line (L 1 ), and    wherein said gas inlet ( 28 ) is covered with a lid member ( 29 ) including at least one opening ( 30 ) having an area in a range between 50% and 80% of an area of a main surface of the lid member ( 29 ).    
     
     
         6 . The processing apparatus ( 10 ) according to  claim 5 , wherein said processing apparatus ( 10 ) includes a plasma generation mechanism for providing a target object with plasma processing in said chamber ( 11 ).  
     
     
         7 . The processing apparatus ( 10 ) according to  claim 5 , wherein said activator ( 12 ) generates plasma of the gas.  
     
     
         8 . A processing apparatus ( 10 ) comprising: 
 a chamber ( 11 );    a gas source (SA) for supplying a gas for cleaning inside of said chamber ( 11 );    a gas line (L 1 ) for introducing the gas supplied from said gas source (SA) into said chamber ( 11 );    an activator ( 12 ) which is prepared in said gas line (L 1 ) and activates the gas supplied from said gas source (SA); and    a gas inlet ( 28 ) which is provided on a surface of said chamber ( 11 ) and connected to said gas line (L 1 ),    wherein said gas inlet ( 28 ) is covered with a lid member ( 29 ) including at least one opening ( 30 ) which is provided diagonally with respect to a thickness direction of the lid member ( 29 ).    
     
     
         9 . The processing apparatus ( 10 ) according to  claim 8 , wherein said processing apparatus ( 10 ) includes a plasma generation mechanism for providing a target object with plasma processing in said chamber ( 11 ).  
     
     
         10 . The processing apparatus ( 10 ) according to  claim 8 , wherein said activator ( 12 ) generates plasma of the gas.  
     
     
         11 . A processing apparatus ( 10 ) comprising: 
 a chamber ( 11 );    a gas source (SA) for supplying a gas for cleaning inside of said chamber ( 11 );    a gas line (L 1 ) for introducing the gas supplied from said gas source (SA) into said chamber ( 11 );    an activator ( 12 ) which is prepared in said gas line (L 1 ) and activates the gas supplied from said gas source (SA); and    a heat mechanism for heating the internal surface of said chamber ( 11 ).    
     
     
         12 . The processing apparatus ( 10 ) according to  claim 11 , wherein said heat mechanism includes a path ( 31 ) for chiller embedded in said chamber ( 11 ).  
     
     
         13 . The processing apparatus ( 10 ) according to  claim 11 , wherein said heat mechanism includes a heater ( 32 ) which is embedded in said chamber ( 11 ).  
     
     
         14 . The processing apparatus ( 10 ) according to  claim 11 , wherein: 
 said chamber ( 11 ) includes a window ( 34 ); and    said heat mechanism is provided outside said chamber ( 11 ) and includes a lamp ( 33 ) for irradiating light to the internal surface of the chamber ( 11 ) through the window ( 34 ).    
     
     
         15 . The processing apparatus ( 10 ) according to  claim 11 , wherein said processing apparatus ( 10 ) includes a plasma generation mechanism for providing a target object with plasma processing in said chamber ( 11 ).  
     
     
         16 . The processing apparatus ( 10 ) according to  claim 11 , wherein said activator ( 12 ) generates plasma of the gas.  
     
     
         17 . A method for cleaning a processing apparatus ( 10 ) including two electrodes in a chamber ( 11 ), said method comprising the steps of: 
 introducing a gas for cleaning into said chamber ( 11 ); and    applying an RF power to each of the two electrodes ( 12 ,  17 ), thereby activating the gas for cleaning.    
     
     
         18 . The method according to  claim 17 , wherein the gas for cleaning is activated to generate plasma thereof.  
     
     
         19 . A method for cleaning a processing apparatus ( 10 ) including two electrodes ( 12 ,  17 ) in a chamber ( 11 ), said method comprising the steps of: 
 activating a gas for cleaning outside said chamber ( 11 );    introducing the activated gas into said chamber ( 11 ); and    applying an RF power to at least one of the two electrodes ( 12 ,  17 ), thereby activating the gas for cleaning.    
     
     
         20 . The method according to  claim 19 , wherein the gas for cleaning is activated to generate plasma thereof.  
     
     
         21 . A method for cleaning a processing apparatus ( 10 ) including a chamber ( 11 ), said method comprising the steps of: 
 activating a gas for cleaning outside said chamber ( 11 ); and    introducing the activated gas into the chamber ( 11 ) in at least three ways.    
     
     
         22 . The method according to  claim 21 , wherein said processing apparatus ( 10 ) provides a target object with plasma processing in the chamber ( 11 ).  
     
     
         23 . The method according to  claim 21 , wherein the gas for cleaning is activated to generate plasma thereof.  
     
     
         24 . A method for cleaning a processing apparatus ( 10 ) including a chamber ( 11 ), said method comprising the steps of: 
 activating a gas outside the chamber ( 11 ); and    introducing the activated gas into the chamber ( 11 ) in various directions.    
     
     
         25 . The method according to  claim 24 , wherein said processing apparatus ( 10 ) provides a target object with plasma processing in the chamber ( 11 ).  
     
     
         26 . The method according to  claim 24 , wherein the gas for cleaning is activated to generate plasma thereof.  
     
     
         27 . A method for cleaning a processing apparatus ( 10 ) including a chamber ( 11 ), said method comprising the steps of: 
 activating a gas for cleaning outside the chamber ( 11 );    introducing the gas into the chamber ( 11 ); and    retaining pressure in the chamber ( 11 ) in a range between 100 Pa and 400 Pa.    
     
     
         28 . The method according to  claim 27 , wherein said processing apparatus ( 10 ) provides a target object with plasma processing in the chamber ( 11 ).  
     
     
         29 . The method according to  claim 27 , wherein the gas for cleaning is activated to generate plasma thereof.  
     
     
         30 . A method for cleaning a processing apparatus ( 10 ) including a chamber ( 11 ), said method comprising the steps of: 
 activating a gas for cleaning outside the chamber ( 11 );    introducing the gas into the chamber ( 11 ); and    heating an inner surface of the chamber ( 11 ).    
     
     
         31 . The method according to  claim 30 , wherein said processing apparatus ( 10 ) provides a target object with plasma processing in the chamber ( 11 ).  
     
     
         32 . The method according to  claim 30 , wherein the gas for cleaning is activated to generate plasma thereof.