Inventor · disambiguated record
Shijian Li
Also filed as: LI SHIJIAN
88 granted patents·26 pending applications·3,327 citations·filing 1995–2017
99Inventor score
Top patents by PatentIndex Score
114 records- 0198US6083344AMulti-zone RF inductively coupled source configurationAPPLIED MATERIALS INC·Filed 1997·Granted Jul 4, 2000·346 cites·18 claims
- 0297US6179709B1In-situ monitoring of linear substrate polishing operationsAPPLIED MATERIALS INC·Filed 1999·Granted Jan 30, 2001·181 cites·15 claims
- 0397US6170428B1Symmetric tunable inductively coupled HDP-CVD reactorAPPLIED MATERIALS INC·Filed 1996·Granted Jan 9, 2001·430 cites·26 claims
- 0497US5772771ADeposition chamber for improved deposition thickness uniformityAPPLIED MATERIALS INC·Filed 1995·Granted Jun 30, 1998·176 cites·14 claims
- 0596US6524167B1Method and composition for the selective removal of residual materials and barrier materials during substrate planarizationAPPLIED MATERIALS INC·Filed 2000·Granted Feb 25, 2003·72 cites·20 claims
- 0696US6416823B2Deposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Jul 9, 2002·61 cites·24 claims
- 0795US6833052B2Deposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Dec 21, 2004·65 cites·38 claims
- 0895US6589610B2Deposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Jul 8, 2003·53 cites·46 claims
- 0995US6541384B1Method of initiating cooper CMP processAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·54 cites·13 claims
- 1095US6465051B1Method of operating high density plasma CVD reactor with combined inductive and capacitive couplingAPPLIED MATERIALS INC·Filed 1996·Granted Oct 15, 2002·221 cites·28 claims
- 1195US6070551ADeposition chamber and method for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1997·Granted Jun 6, 2000·135 cites·20 claims
- 1295US5761023ASubstrate support with pressure zones having reduced contact area and temperature feedbackAPPLIED MATERIALS INC·Filed 1996·Granted Jun 2, 1998·218 cites·43 claims
- 1394US7615480B2Methods of post-contact back end of the line through-hole via integrationLAM RES CORP·Filed 2007·Granted Nov 10, 2009·22 cites·17 claims
- 1494US6623334B1Chemical mechanical polishing with friction-based controlAPPLIED MATERIALS INC·Filed 2000·Granted Sep 23, 2003·41 cites·23 claims
- 1594US6413873B1System for chemical mechanical planarizationAPPLIED MATERIALS INC·Filed 2000·Granted Jul 2, 2002·85 cites·3 claims
- 1692US7513062B2Single wafer dryer and drying methodsAPPLIED MATERIALS INC·Filed 2005·Granted Apr 7, 2009·23 cites·13 claims
- 1792US6796880B2Linear polishing sheet with windowAPPLIED MATERIALS INC·Filed 2003·Granted Sep 28, 2004·42 cites·22 claims
- 1891US6709316B1Method and apparatus for two-step barrier layer polishingAPPLIED MATERIALS INC·Filed 2000·Granted Mar 23, 2004·64 cites·55 claims
- 1991US6676497B1Vibration damping in a chemical mechanical polishing systemAPPLIED MATERIALS INC·Filed 2000·Granted Jan 13, 2004·33 cites·9 claims
- 2091US6592742B2Electrochemically assisted chemical polishAPPLIED MATERIALS INC·Filed 2001·Granted Jul 15, 2003·31 cites·20 claims
- 2190US8404626B2Post-deposition cleaning methods and formulations for substrates with cap layersKOLICS ARTUR·Filed 2008·Granted Mar 26, 2013·14 cites·22 claims
- 2290US6887129B2Chemical mechanical polishing with friction-based controlAPPLIED MATERIALS INC·Filed 2003·Granted May 3, 2005·29 cites·24 claims
- 2390US6585563B1In-situ monitoring of linear substrate polishing operationsAPPLIED MATERIALS INC·Filed 2000·Granted Jul 1, 2003·35 cites·16 claims
- 2490US6077357AOrientless wafer processing on an electrostatic chuckAPPLIED MATERIALS INC·Filed 1997·Granted Jun 20, 2000·105 cites·26 claims
- 2589US6955516B2Single wafer dryer and drying methodsAPPLIED MATERIALS INC·Filed 2002·Granted Oct 18, 2005·33 cites·20 claims
- 2689US6863794B2Method and apparatus for forming metal layersAPPLIED MATERIALS INC·Filed 2001·Granted Mar 8, 2005·18 cites·10 claims
- 2789US6451697B1Method for abrasive-free metal CMP in passivation domainAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·38 cites·15 claims
- 2888US6991517B2Linear polishing sheet with windowAPPLIED MATERIALS INC·Filed 2004·Granted Jan 31, 2006·29 cites·8 claims
- 2988US6669538B2Pad cleaning for a CMP systemAPPLIED MATERIALS INC·Filed 2000·Granted Dec 30, 2003·32 cites·7 claims
- 3087US7980255B2Single wafer dryer and drying methodsAPPLIED MATERIALS INC·Filed 2007·Granted Jul 19, 2011·10 cites·18 claims
- 3187US7059948B2Articles for polishing semiconductor substratesAPPLIED MATERIALS INC·Filed 2001·Granted Jun 13, 2006·25 cites·31 claims
- 3286US6653242B1Solution to metal re-deposition during substrate planarizationAPPLIED MATERIALS INC·Filed 2000·Granted Nov 25, 2003·33 cites·22 claims
- 3385US6613200B2Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platformAPPLIED MATERIALS INC·Filed 2001·Granted Sep 2, 2003·33 cites·31 claims
- 3483US8519461B2Device with post-contact back end of line through-hole via integrationBOYD JOHN·Filed 2012·Granted Aug 27, 2013·4 cites·5 claims
- 3582US7220322B1Cu CMP polishing pad cleaningAPPLIED MATERIALS INC·Filed 2000·Granted May 22, 2007·21 cites·7 claims
- 3682US7014538B2Article for polishing semiconductor substratesAPPLIED MATERIALS INC·Filed 2003·Granted Mar 21, 2006·27 cites·32 claims
- 3781US7968439B2Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfacesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 28, 2011·6 cites·13 claims
- 3880US7497767B2Vibration damping during chemical mechanical polishingAPPLIED MATERIALS INC·Filed 2005·Granted Mar 3, 2009·8 cites·3 claims
- 3980US7022608B2Method and composition for the removal of residual materials during substrate planarizationAPPLIED MATERIALS INC·Filed 2003·Granted Apr 4, 2006·10 cites·35 claims
- 4080US6821881B2Method for chemical mechanical polishing of semiconductor substratesAPPLIED MATERIALS INC·Filed 2002·Granted Nov 23, 2004·17 cites·6 claims
- 4179US6858540B2Selective removal of tantalum-containing barrier layer during metal CMPAPPLIED MATERIALS INC·Filed 2002·Granted Feb 22, 2005·21 cites·34 claims
- 4278US7713757B2Method for measuring dopant concentration during plasma ion implantationAPPLIED MATERIALS INC·Filed 2008·Granted May 11, 2010·4 cites·25 claims
- 4377US7201636B2Chemical mechanical polishing a substrate having a filler layer and a stop layerAPPLIED MATERIALS INC·Filed 2005·Granted Apr 10, 2007·5 cites·6 claims
- 4477US6261157B1Selective damascene chemical mechanical polishingAPPLIED MATERIALS INC·Filed 1999·Granted Jul 17, 2001·52 cites·18 claims
- 4576US6592439B1Platen for retaining polishing materialAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·22 cites·43 claims
- 4675US6485359B1Platen arrangement for a chemical-mechanical planarization apparatusAPPLIED MATERIALS INC·Filed 2000·Granted Nov 26, 2002·16 cites·20 claims
- 4775US6322427B1Conditioning fixed abrasive articlesAPPLIED MATERIALS INC·Filed 1999·Granted Nov 27, 2001·35 cites·45 claims
- 4874US6872329B2Chemical mechanical polishing composition and processAPPLIED MATERIALS INC·Filed 2001·Granted Mar 29, 2005·15 cites·32 claims
- 4974US6162368ATechnique for chemical mechanical polishing siliconAPPLIED MATERIALS INC·Filed 1998·Granted Dec 19, 2000·36 cites·33 claims
- 5073US7749893B2Methods and systems for low interfacial oxide contact between barrier and copper metallizationLAM RES CORP·Filed 2006·Granted Jul 6, 2010·3 cites·14 claims
Showing the top 50 of 114 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →