Inventor · disambiguated record
Shinjiro Umehara
Also filed as: UMEHARA SHINJIRO
8 granted patents·8 pending applications·80 citations·filing 2005–2015
85Inventor score
Top patents by PatentIndex Score
16 records- 0193US7382643B2Magnetoresistive effect element and magnetic memory deviceFUJITSU LTD·Filed 2006·Granted Jun 3, 2008·41 cites·12 claims
- 0292US7466526B2Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory deviceFUJITSU LTD·Filed 2005·Granted Dec 16, 2008·17 cites·9 claims
- 0378US8194362B2Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic headIBUSUKI TAKAHIRO·Filed 2010·Granted Jun 5, 2012·5 cites·10 claims
- 0476US8072714B2Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR deviceSATO MASASHIGE·Filed 2011·Granted Dec 6, 2011·6 cites·6 claims
- 0575US7535755B2Magnetic memory device and method for fabricating the sameFUJITSU LTD·Filed 2006·Granted May 19, 2009·5 cites·11 claims
- 0673US8081404B2Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layerIBUSUKI TAKAHIRO·Filed 2009·Granted Dec 20, 2011·5 cites·7 claims
- 0766US8184407B2Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural bodyIBUSUKI TAKAHIRO·Filed 2008·Granted May 22, 2012·1 cites·15 claims
- 0848US2009244790A1Magnetoresistive element and layered objectFUJITSU LTD·Filed 2009·Application pending·0 cites
- 0947US2009097170A1Ferromagnetic tunnel junction element, magnetic recording device and magnetic memory deviceFUJITSU LTD·Filed 2008·Application pending·0 cites
- 1043US2007277910A1Manufacturing method of tunnel magnetoresistance element and manufacturing method of nonvolatile memory deviceFUJITSU LTD·Filed 2006·Application pending·0 cites
- 1142US2006220084A1Magnetoresistive effect element and method for fabricating the sameFUJITSU LTD·Filed 2005·Application pending·0 cites
- 1239US2008112093A1Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR deviceFUJITSU LTD·Filed 2007·Application pending·0 cites
- 1335US2008080102A1Tunnel magnetoresistance element, magnetic head, and magnetic memoryFUJITSU LTD·Filed 2007·Application pending·0 cites
- 1435US2007278603A1Magnetic memory device and method for fabricating the sameFUJITSU LTD·Filed 2006·Application pending·0 cites
- 1534US2007242505A1Magnetic memory device and method for driving the sameFUJITSU LTD·Filed 2006·Application pending·0 cites
- 1631US9711390B2Shallow trench isolation trenches and methods for NAND memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 18, 2017·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →