Inventor · disambiguated record
Shien-Yang Wu
Also filed as: WU SHIEN-YANG
43 granted patents·7 pending applications·380 citations·filing 2000–2024
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG24TAIWAN SEMICONDUCTOR MFG CO LTD19THEI KONG-BENG3CHANG SUN-JAY1LIANG MINCHANG1
Top patents by PatentIndex Score
50 records- 0199US11302692B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·8 cites·16 claims
- 0296US11742349B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·2 cites·20 claims
- 0393US11101359B2Gate-all-around (GAA) method and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·6 cites·20 claims
- 0493US10014066B2Anti-fuse cell structure including reading and programming devices with different gate dielectric thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 3, 2018·8 cites·19 claims
- 0589US8174091B2Fuse structureTHEI KONG-BENG·Filed 2009·Granted May 8, 2012·13 cites·20 claims
- 0689US6580145B2Low programming voltage anti-fuse structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 17, 2003·56 cites·7 claims
- 0789US6323097B1Electrical overlay/spacing monitor method using a ladder resistorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·61 cites·35 claims
- 0888US8969999B2Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing sameLIANG MINCHANG·Filed 2011·Granted Mar 3, 2015·12 cites·20 claims
- 0988US7952142B2Variable width offset spacers for mixed signal and system on chip devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 31, 2011·13 cites·11 claims
- 1085US9093566B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·5 cites·20 claims
- 1184US7332791B2Electrically programmable polysilicon fuse with multiple level resistance and programmingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 19, 2008·10 cites·7 claims
- 1282US7456066B2Variable width offset spacers for mixed signal and system on chip devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 25, 2008·8 cites·11 claims
- 1382US7279430B2Process for fabricating a strained channel MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 9, 2007·23 cites·27 claims
- 1481US8629050B2E-fuse structure design in electrical programmable redundancy for embedded memory circuitTHEI KONG-BENG·Filed 2012·Granted Jan 14, 2014·4 cites·20 claims
- 1581US7898028B2Process for fabricating a strained channel MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·6 cites·15 claims
- 1681US6806107B1Electrical fuse element test structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 19, 2004·30 cites·26 claims
- 1780US12051695B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 1879US7782073B2High accuracy and universal on-chip switch matrix testlineTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 24, 2010·11 cites·18 claims
- 1979US6885214B1Method for measuring capacitance-voltage curves for transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 26, 2005·24 cites·32 claims
- 2079US2024355896A1Methods of forming gate-all-around (gaa) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2176US6956277B1Diode junction poly fuseTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 18, 2005·19 cites·10 claims
- 2275US7078723B2Microelectronic device with depth adjustable sillTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 18, 2006·17 cites·22 claims
- 2374US9099467B2E-fuse structure design in electrical programmable redundancy for embedded memory circuitTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 4, 2015·2 cites·20 claims
- 2472US12057485B2Gate-all-around (GAA) method and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·18 claims
- 2571US10347646B2Anti-fuse cell structure including reading and programming devices with different gate dielectric thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·1 cites·20 claims
- 2670US9419087B2Bipolar junction transistor formed on fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·2 cites·20 claims
- 2769US9780003B2Bipolar junction transistor formed on fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·1 cites·20 claims
- 2868US10521537B2Method and system of generating layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·19 claims
- 2968US9293378B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 22, 2016·1 cites·20 claims
- 3068US8686536B2Electrical fuse structure and method of formationWU SHIEN-YANG·Filed 2010·Granted Apr 1, 2014·4 cites·19 claims
- 3166US7109564B2Low power fuse structure and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 19, 2006·13 cites·18 claims
- 3264US9741658B2Electrical fuse structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 22, 2017·1 cites·20 claims
- 3362US9865536B2Electrical fuse structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 9, 2018·1 cites·19 claims
- 3461US12033939B2Electrical fuse structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 9, 2024·0 cites·20 claims
- 3561US9892221B2Method and system of generating a layout including a fuse layout patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 13, 2018·1 cites·20 claims
- 3657US6970394B2Programming method for electrical fuse cell and circuit thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 29, 2005·9 cites·42 claims
- 3756US7678655B2Spacer layer etch method providing enhanced microelectronic device performanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 16, 2010·1 cites·20 claims
- 3855US9755075B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 3953US11410925B2Electrical fuse structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 9, 2022·0 cites·20 claims
- 4053US6828198B2System-on-chip (SOC) solutions with multiple devices by multiple poly gate trimming processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 7, 2004·4 cites·43 claims
- 4148US9881837B2Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 30, 2018·0 cites·20 claims
- 4248US7892895B2Diode junction poly fuseTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 22, 2011·0 cites·10 claims
- 4348US2005285222A1New fuse structureTHEI KONG-BENG·Filed 2005·Application pending·0 cites
- 4445US7271431B2Integrated circuit structure and method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 18, 2007·2 cites·20 claims
- 4545US2010213569A1Integrated circuits having fuses and systems thereofTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 4642US2008244475A1Network based integrated circuit testline generatorLO TSENG CHIN·Filed 2007·Application pending·0 cites
- 4741US2005087836A1Electrically programmable polysilicon fuse with multiple level resistance and programmingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 4841US2008022254A1System and method for improving mask tape-out processTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 4938US11309244B2Electrical fuse structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 19, 2022·0 cites·20 claims
- 5036US2005208726A1Spacer approach for CMOS devicesCHANG SUN-JAY·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →