Inventor · disambiguated record
Souvick Mitra
Also filed as: MITRA SOUVICK
124 granted patents·18 pending applications·770 citations·filing 2004–2024
99Inventor score
Files withIBM65GLOBALFOUNDRIES US INC37GLOBALFOUNDRIES INC15ABOU-KHALIL MICHEL J11GAUTHIER JR ROBERT J4
Top patents by PatentIndex Score
142 records- 0199US7786535B2Design structures for high-voltage integrated circuitsIBM·Filed 2008·Granted Aug 31, 2010·249 cites·14 claims
- 0298US9818542B2Gate-all-around fin deviceIBM·Filed 2015·Granted Nov 14, 2017·19 cites·12 claims
- 0398US9590108B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 7, 2017·20 cites·12 claims
- 0498US9431388B1Series-connected nanowire structuresIBM·Filed 2015·Granted Aug 30, 2016·36 cites·5 claims
- 0598US9397163B2Gate-all-around fin deviceIBM·Filed 2015·Granted Jul 19, 2016·19 cites·9 claims
- 0698US9281379B1Gate-all-around fin deviceIBM·Filed 2014·Granted Mar 8, 2016·31 cites·19 claims
- 0797US9923096B2Gate-all-around fin deviceIBM·Filed 2017·Granted Mar 20, 2018·12 cites·12 claims
- 0896US9911852B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 6, 2018·8 cites·14 claims
- 0995US10381483B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·5 cites·12 claims
- 1095US10147822B2Gate-all-around fin deviceIBM·Filed 2017·Granted Dec 4, 2018·5 cites·10 claims
- 1195US10090400B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·6 cites·8 claims
- 1295US10008491B1Low capacitance electrostatic discharge (ESD) devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 26, 2018·14 cites·20 claims
- 1395US9978874B2Gate-all-around fin deviceIBM·Filed 2017·Granted May 22, 2018·6 cites·20 claims
- 1494US10573754B2Gate-all around fin deviceIBM·Filed 2017·Granted Feb 25, 2020·4 cites·11 claims
- 1594US10090301B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·4 cites·8 claims
- 1694US9041127B2FinFET device technology with LDMOS structures for high voltage operationsIBM·Filed 2013·Granted May 26, 2015·19 cites·16 claims
- 1794US8445355B2Metal-insulator-metal capacitors with high capacitance densityABOU-KHALIL MICHEL J·Filed 2010·Granted May 21, 2013·18 cites·22 claims
- 1893US10658514B2Gate-all-around fin deviceIBM·Filed 2018·Granted May 19, 2020·2 cites·20 claims
- 1992US10381484B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·3 cites·12 claims
- 2092US8841174B1Silicon controlled rectifier with integral deep trench capacitorIBM·Filed 2013·Granted Sep 23, 2014·12 cites·8 claims
- 2191US11804481B2Fin-based and bipolar electrostatic discharge devicesGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 31, 2023·2 cites·19 claims
- 2290US10096587B1Fin-based diode structures with a realigned feature layoutGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 2390US8637388B2Semiconductor device heat dissipation structureIBM·Filed 2013·Granted Jan 28, 2014·12 cites·20 claims
- 2489US11658480B2Ultra-low leakage electrostatic discharge device with controllable trigger voltageGLOBALFOUNDRIES US INC·Filed 2020·Granted May 23, 2023·2 cites·16 claims
- 2589US8760831B2Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structuresIBM·Filed 2013·Granted Jun 24, 2014·6 cites·20 claims
- 2689US7714356B2Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltageIBM·Filed 2007·Granted May 11, 2010·17 cites·20 claims
- 2788US10290626B1High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted May 14, 2019·5 cites·18 claims
- 2888US9391065B1Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeIBM·Filed 2015·Granted Jul 12, 2016·5 cites·7 claims
- 2988US7180135B1Double gate (DG) SOI ratioed logic with intrinsically on symmetric DG-MOSFET loadGEORGE MASON INTELLECTUAL PROP·Filed 2004·Granted Feb 20, 2007·54 cites·21 claims
- 3087US10974433B2Gate-all-around fin deviceIBM·Filed 2019·Granted Apr 13, 2021·1 cites·12 claims
- 3187US10593805B2Gate-all-around fin deviceIBM·Filed 2019·Granted Mar 17, 2020·1 cites·11 claims
- 3287US9236374B2Fin contacted electrostatic discharge (ESD) devices with improved heat distributionIBM·Filed 2014·Granted Jan 12, 2016·8 cites·19 claims
- 3386US9006783B2Silicon controlled rectifier with integral deep trench capacitorIBM·Filed 2014·Granted Apr 14, 2015·6 cites·8 claims
- 3485US10388793B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 20, 2019·1 cites·16 claims
- 3585US9064786B2Dual three-dimensional (3D) resistor and methods of formingIBM·Filed 2013·Granted Jun 23, 2015·7 cites·10 claims
- 3684US9869708B2Integrated circuit protection during high-current ESD testingIBM·Filed 2015·Granted Jan 16, 2018·3 cites·7 claims
- 3784US8686508B2Structures, methods and applications for electrical pulse anneal processesABOU-KHALIL MICHEL J·Filed 2009·Granted Apr 1, 2014·5 cites·9 claims
- 3884US7274546B2Apparatus and method for improved triggering and leakage current control of ESD clamping devicesIBM·Filed 2005·Granted Sep 25, 2007·13 cites·16 claims
- 3983US8891212B2RC-triggered semiconductor controlled rectifier for ESD protection of signal padsABOU-KHALIL MICHEL J·Filed 2011·Granted Nov 18, 2014·7 cites·24 claims
- 4083US7943438B2Structure and method for a silicon controlled rectifier (SCR) structure for SOI technologyIBM·Filed 2008·Granted May 17, 2011·8 cites·9 claims
- 4182US9413169B2Electrostatic discharge protection circuit with a fail-safe mechanismGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
- 4282US9240471B2SCR with fin body regions for ESD protectionIBM·Filed 2013·Granted Jan 19, 2016·5 cites·16 claims
- 4382US8101505B2Programmable electrical fuseABOU-KHALIL MICHEL J·Filed 2008·Granted Jan 24, 2012·9 cites·13 claims
- 4481US8669146B2Semiconductor structures with thinned junctions and methods of manufactureABOU-KHALIL MICHEL J·Filed 2011·Granted Mar 11, 2014·5 cites·15 claims
- 4581US7298008B2Electrostatic discharge protection device and method of fabricating sameIBM·Filed 2006·Granted Nov 20, 2007·6 cites·7 claims
- 4680US8890249B2Bulk FinFET ESD deviceIBM·Filed 2012·Granted Nov 18, 2014·4 cites·7 claims
- 4780US7826185B2Structure and circuit technique for uniform triggering of multifinger semiconductor devices with tunable trigger voltageIBM·Filed 2007·Granted Nov 2, 2010·9 cites·32 claims
- 4880US7518845B2RC-triggered power clamp suppressing negative mode electrostatic discharge stressIBM·Filed 2006·Granted Apr 14, 2009·11 cites·20 claims
- 4979US8610249B2Non-planar capacitor and method of forming the non-planar capacitorDI SARRO JAMES P·Filed 2012·Granted Dec 17, 2013·5 cites·19 claims
- 5078US11349304B2Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuitGLOBALFOUNDRIES US INC·Filed 2020·Granted May 31, 2022·1 cites·18 claims
Showing the top 50 of 142 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →