Inventor · disambiguated record
Soon-Cheon Seo
Also filed as: SEO SOON-CHEON
176 granted patents·23 pending applications·923 citations·filing 2000–2024
99Inventor score
Files withIBM176GLOBALFOUNDRIES INC6INFINEON TECHNOLOGIES AG3KANAKASABAPATHY SIVANANDA K2TESSERA INC2
Top patents by PatentIndex Score
199 records- 0198US10297668B1Vertical transport fin field effect transistor with asymmetric channel profileIBM·Filed 2018·Granted May 21, 2019·18 cites·10 claims
- 0297US10115800B1Vertical fin bipolar junction transistor with high germanium content silicon germanium baseIBM·Filed 2017·Granted Oct 30, 2018·17 cites·12 claims
- 0397US9397006B1Co-integration of different fin pitches for logic and analog devicesIBM·Filed 2015·Granted Jul 19, 2016·25 cites·20 claims
- 0497US9330983B1CMOS NFET and PFET comparable spacer widthIBM·Filed 2015·Granted May 3, 2016·18 cites·15 claims
- 0597US6573606B2Chip to wiring interface with single metal alloy layer applied to surface of copper interconnectIBM·Filed 2001·Granted Jun 3, 2003·307 cites·8 claims
- 0696US12329045B2Phase change memory programming current leakage reductionIBM·Filed 2021·Granted Jun 10, 2025·2 cites·20 claims
- 0796US10804165B2Source and drain isolation for CMOS nanosheet with one block maskIBM·Filed 2019·Granted Oct 13, 2020·12 cites·19 claims
- 0896US9685340B2Stable contact on one-sided gate tie-down structureIBM·Filed 2015·Granted Jun 20, 2017·17 cites·17 claims
- 0996US9431486B1Channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devicesIBM·Filed 2015·Granted Aug 30, 2016·13 cites·20 claims
- 1095US12317514B2Resistive random-access memory structures with stacked transistorsIBM·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 1195US10325820B1Source and drain isolation for CMOS nanosheet with one block maskIBM·Filed 2018·Granted Jun 18, 2019·14 cites·13 claims
- 1295US10236362B2Nanowire FET including nanowire channel spacersIBM·Filed 2016·Granted Mar 19, 2019·10 cites·17 claims
- 1395US9595592B1Forming dual contact silicide using metal multi-layer and ion beam mixingIBM·Filed 2015·Granted Mar 14, 2017·11 cites·16 claims
- 1495US9553093B1Spacer for dual epi CMOS devicesIBM·Filed 2015·Granted Jan 24, 2017·10 cites·8 claims
- 1594US10347456B1Vertical vacuum channel transistor with minimized air gap between tip and gateIBM·Filed 2018·Granted Jul 9, 2019·8 cites·16 claims
- 1694US9806078B1FinFET spacer formation on gate sidewalls, between the channel and source/drain regionsGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·9 cites·17 claims
- 1794US9576961B2Semiconductor devices with sidewall spacers of equal thicknessIBM·Filed 2015·Granted Feb 21, 2017·6 cites·9 claims
- 1894US9461168B1Channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devicesIBM·Filed 2016·Granted Oct 4, 2016·8 cites·1 claims
- 1994US6503834B1Process to increase reliability CuBEOL structuresIBM·Filed 2000·Granted Jan 7, 2003·79 cites·16 claims
- 2093US10672872B1Self-aligned base contacts for vertical fin-type bipolar junction transistorsIBM·Filed 2019·Granted Jun 2, 2020·9 cites·20 claims
- 2193US9443855B1Spacer formation on semiconductor deviceIBM·Filed 2015·Granted Sep 13, 2016·7 cites·17 claims
- 2292US10396126B1Resistive memory device with electrical gate controlIBM·Filed 2018·Granted Aug 27, 2019·11 cites·20 claims
- 2392US10256296B2Middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stackIBM·Filed 2015·Granted Apr 9, 2019·5 cites·11 claims
- 2492US9887289B2Method and structure of improving contact resistance for passive and long channel devicesIBM·Filed 2015·Granted Feb 6, 2018·6 cites·9 claims
- 2592US9449884B1Semiconductor device with trench epitaxy and contactIBM·Filed 2015·Granted Sep 20, 2016·7 cites·19 claims
- 2691US10381074B1Differential weight reading of an analog memory element in crosspoint array utilizing current subtraction transistorsIBM·Filed 2018·Granted Aug 13, 2019·10 cites·20 claims
- 2791US10049876B1Removal of trilayer resist without damage to underlying structureIBM·Filed 2017·Granted Aug 14, 2018·5 cites·20 claims
- 2891US9871099B2Nanosheet isolation for bulk CMOS non-planar devicesIBM·Filed 2015·Granted Jan 16, 2018·6 cites·19 claims
- 2991US9577096B2Salicide formation on replacement metal gate finFet devicesIBM·Filed 2015·Granted Feb 21, 2017·6 cites·12 claims
- 3090US10347739B2Extended contact area using undercut silicide extensionsIBM·Filed 2017·Granted Jul 9, 2019·5 cites·16 claims
- 3190US9502418B2Semiconductor devices with sidewall spacers of equal thicknessIBM·Filed 2014·Granted Nov 22, 2016·5 cites·20 claims
- 3289US9905479B2Semiconductor devices with sidewall spacers of equal thicknessIBM·Filed 2017·Granted Feb 27, 2018·3 cites·18 claims
- 3389US9704760B2Integrated circuit (IC) with offset gate sidewall contacts and method of manufactureIBM·Filed 2015·Granted Jul 11, 2017·6 cites·19 claims
- 3489US9520500B1Self heating reduction for analog radio frequency (RF) deviceIBM·Filed 2015·Granted Dec 13, 2016·5 cites·13 claims
- 3589US8569125B2FinFET with improved gate planaritySTANDAERT THEODORUS EDUARDUS·Filed 2011·Granted Oct 29, 2013·12 cites·15 claims
- 3688US10777679B2Removal of work function metal wing to improve device yield in vertical FETsIBM·Filed 2019·Granted Sep 15, 2020·4 cites·20 claims
- 3788US10355080B2Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stackIBM·Filed 2016·Granted Jul 16, 2019·3 cites·6 claims
- 3888US9673101B2Minimize middle-of-line contact line shortsIBM·Filed 2015·Granted Jun 6, 2017·4 cites·17 claims
- 3988US9362362B2FinFET with dielectric isolated channelIBM·Filed 2014·Granted Jun 7, 2016·6 cites·20 claims
- 4087US11600325B2Non volatile resistive memory logic deviceIBM·Filed 2020·Granted Mar 7, 2023·2 cites·19 claims
- 4187US10971585B2Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gatesIBM·Filed 2018·Granted Apr 6, 2021·4 cites·18 claims
- 4286US10541329B2Boosted vertical field-effect transistorIBM·Filed 2018·Granted Jan 21, 2020·3 cites·20 claims
- 4386US10468498B2Vertical fin bipolar junction transistor with high germanium content silicon germanium baseIBM·Filed 2018·Granted Nov 5, 2019·3 cites·8 claims
- 4486US9887198B2Semiconductor devices with sidewall spacers of equal thicknessIBM·Filed 2016·Granted Feb 6, 2018·2 cites·16 claims
- 4586US9214360B2Methods of patterning features having differing widthsGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 15, 2015·6 cites·17 claims
- 4685US10381462B2Nanowire FET including nanowire channel spacersIBM·Filed 2017·Granted Aug 13, 2019·3 cites·19 claims
- 4785US8551874B2MOSFET gate and source/drain contact metallizationSEO SOON-CHEON·Filed 2010·Granted Oct 8, 2013·10 cites·16 claims
- 4884US12237368B2Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stackADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 4984US10763431B2Film stress control for memory device stackIBM·Filed 2018·Granted Sep 1, 2020·3 cites·17 claims
- 5084US10141232B2Vertical CMOS devices with common gate stacksIBM·Filed 2016·Granted Nov 27, 2018·4 cites·19 claims
Showing the top 50 of 199 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →