Inventor · disambiguated record
Steven Langdon
Also filed as: LANGDON STEVEN · LANGDON STEVEN MICHAEL
8 granted patents·1 pending application·19 citations·filing 1998–2024
80Inventor score
Files withFLACHOWSKY STEFAN2SCHEIPER THILO2GLOBALFOUNDRIES INC1GLOBALFOUNDRIES US INC1HOENTSCHEL JAN1
Top patents by PatentIndex Score
9 records- 0184US8501601B2Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 6, 2013·6 cites·15 claims
- 0280US9048336B2Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structuresSCHEIPER THILO·Filed 2011·Granted Jun 2, 2015·4 cites·9 claims
- 0377US9425052B2Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·2 cites·16 claims
- 0462US8586440B2Methods for fabricating integrated circuits using non-oxidizing resist removalFLACHOWSKY STEFAN·Filed 2011·Granted Nov 19, 2013·1 cites·18 claims
- 0561US12328926B1Structures for a field-effect transistor that include a spacer structureGLOBALFOUNDRIES US INC·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 0638US8664068B2Low-diffusion drain and source regions in CMOS transistors for low power/high performance applicationsHOENTSCHEL JAN·Filed 2011·Granted Mar 4, 2014·0 cites·19 claims
- 0736US2012049291A1Polysilicon Resistors Formed in a Semiconductor Device Comprising High-K Metal Gate Electrode StructuresSCHEIPER THILO·Filed 2011·Application pending·0 cites
- 0834US8508001B2Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making sameLANGDON STEVEN·Filed 2011·Granted Aug 13, 2013·0 cites·16 claims
- 0931US6017018ALift-a-top plusFiled 1998·Granted Jan 25, 2000·6 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →