Inventor · disambiguated record
Steven R. Sherman
Also filed as: SHERMAN STEVEN · SHERMAN STEVEN R · SHERMAN STEVEN ROBERT
22 granted patents·5 pending applications·91 citations·filing 2002–2024
94Inventor score
Files withVARIAN SEMICONDUCTOR EQUIPMENT ASS INC10TEL EPION INC7APPLIED MATERIALS INC4VARIAN SEMICONDUCTOR EQUIPMENT4RUSSELL NOEL1
Top patents by PatentIndex Score
27 records- 0190US7291558B2Copper interconnect wiring and method of forming thereofTEL EPION INC·Filed 2005·Granted Nov 6, 2007·17 cites·60 claims
- 0288US10310379B2Multiple patterning approach using ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Jun 4, 2019·5 cites·18 claims
- 0386US7799683B2Copper interconnect wiring and method and apparatus for forming thereofTEL EPION INC·Filed 2007·Granted Sep 21, 2010·9 cites·24 claims
- 0484US10971368B2Techniques for processing substrates using directional reactive ion etchingVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Apr 6, 2021·3 cites·13 claims
- 0580US8192805B2Method to improve electrical leakage performance and to minimize electromigration in semiconductor devicesRUSSELL NOEL·Filed 2008·Granted Jun 5, 2012·7 cites·10 claims
- 0680US7838423B2Method of forming capping structures on one or more material layer surfacesTEL EPION INC·Filed 2009·Granted Nov 23, 2010·5 cites·32 claims
- 0780US7754588B2Method to improve a copper/dielectric interface in semiconductor devicesTEL EPION INC·Filed 2007·Granted Jul 13, 2010·7 cites·7 claims
- 0878US10332748B2Etch rate modulation through ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jun 25, 2019·2 cites·10 claims
- 0978US9934981B2Techniques for processing substrates using directional reactive ion etchingVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Apr 3, 2018·3 cites·8 claims
- 1076US9934982B2Etch rate modulation through ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Apr 3, 2018·2 cites·20 claims
- 1176US7981483B2Method to improve electrical leakage performance and to minimize electromigration in semiconductor devicesTEL EPION INC·Filed 2007·Granted Jul 19, 2011·7 cites·8 claims
- 1275US9613813B2Method for improving critical dimension variability by implanting argon or silicon ions into a patterned maskVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Apr 4, 2017·2 cites·13 claims
- 1372US10777414B1Methods for reducing transfer pattern defects in a semiconductor deviceAPPLIED MATERIALS INC·Filed 2019·Granted Sep 15, 2020·1 cites·20 claims
- 1471US6919061B1In-situ method for treating residual sodiumUS ENERGY·Filed 2002·Granted Jul 19, 2005·17 cites·8 claims
- 1569US10229832B2Techniques for forming patterned features using directional ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Mar 12, 2019·1 cites·19 claims
- 1667US10204909B2Non-uniform gate oxide thickness for DRAM deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Feb 12, 2019·1 cites·14 claims
- 1764US11217448B2Methods for reducing transfer pattern defects in a semiconductor deviceAPPLIED MATERIALS INC·Filed 2020·Granted Jan 4, 2022·0 cites·20 claims
- 1862US9728623B2Replacement metal gate transistorVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2013·Granted Aug 8, 2017·1 cites·8 claims
- 1962US9153444B2Process flow for replacement metal gate transistorsVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Oct 6, 2015·1 cites·2 claims
- 2061US2025299964A1Pattern shaping of metal resist layer using reactive angled beam processingAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2156US2025140604A1Via shaping between metal layers for controlled resistanceAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2252US9082949B2Magnetic memory and method of fabricationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Jul 14, 2015·0 cites·6 claims
- 2352US8946836B2Magnetic memory and method of fabricationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Feb 3, 2015·0 cites·9 claims
- 2450US2009233004A1Method and system for depositing silicon carbide film using a gas cluster ion beamTEL EPION INC·Filed 2008·Application pending·0 cites
- 2544US2007184656A1GCIB Cluster Tool Apparatus and Method of OperationTEL EPION INC·Filed 2007·Application pending·0 cites
- 2643US10629437B2Techniques and structure for forming dynamic random-access device using angled ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Apr 21, 2020·0 cites·17 claims
- 2735US2016111254A1Workpiece Processing Method And ApparatusVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →