Inventor · disambiguated record
Sung Mun Jung
Also filed as: JUNG SUNG M · JUNG SUNG MUN
42 granted patents·11 pending applications·224 citations·filing 1997–2017
97Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD15HYNIX SEMICONDUCTOR INC9DONGBU ELECTRONICS CO LTD7HYUNDAI ELECTRONICS IND7CHARTERED SEMICONDUCTOR MFG4
Top patents by PatentIndex Score
53 records- 0194US9406687B1Integration of memory devices with different voltagesGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Aug 2, 2016·17 cites·20 claims
- 0289US9269766B2Guard ring for memory arrayGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Feb 23, 2016·9 cites·20 claims
- 0386US9842844B2Contact strap for memory arrayGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 12, 2017·7 cites·20 claims
- 0479US6844231B2Method of manufacturing a flash memory cell using a self-aligned floating gateHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 18, 2005·25 cites·22 claims
- 0577US7015099B2Method of manufacturing a flash memory cell capable of increasing a coupling ratioHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Mar 21, 2006·21 cites·22 claims
- 0675US7439603B2Non-volatile memory device and fabricating method thereofDONGBU HITEK CO LTD·Filed 2007·Granted Oct 21, 2008·5 cites·14 claims
- 0772US8383475B2EEPROM cellGLOBALFOUNDRIES SG PTE LTD·Filed 2010·Granted Feb 26, 2013·3 cites·25 claims
- 0872US6720217B2Method of manufacturing flash memory device using trench device isolation processHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Apr 13, 2004·19 cites·11 claims
- 0970US7595237B2Non-volatile memory cell with a hybrid access transistorCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Sep 29, 2009·4 cites·21 claims
- 1068US7585746B2Process integration scheme of SONOS technologyCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Sep 8, 2009·4 cites·15 claims
- 1167US6721208B2Method of erasing flash memory cellsHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Apr 13, 2004·15 cites·7 claims
- 1264US9960172B2Reliable non-volatile memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted May 1, 2018·1 cites·14 claims
- 1363US7297595B2Non-volatile memory device and fabricating method thereofDONGBU HITEK CO LTD·Filed 2004·Granted Nov 20, 2007·10 cites·6 claims
- 1463US6759299B2Method for manufacturing flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jul 6, 2004·8 cites·10 claims
- 1563US6642110B2Flash memory cell and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2002·Granted Nov 4, 2003·11 cites·19 claims
- 1662US6620684B2Method of manufacturing nonvolatile memory cellHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 16, 2003·8 cites·6 claims
- 1756US8664711B2Dielectric stackGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Mar 4, 2014·0 cites·20 claims
- 1855US8664708B2EEPROM cellGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Mar 4, 2014·1 cites·20 claims
- 1954US8383476B2EEPROM cellGLOBALFOUNDRIES SG PTE LTD·Filed 2010·Granted Feb 26, 2013·1 cites·21 claims
- 2052US6426897B1Method of erasing a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jul 30, 2002·8 cites·3 claims
- 2151US7195977B2Method for fabricating a semiconductor deviceDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Mar 27, 2007·3 cites·14 claims
- 2251US6465833B1Flash memory cell and method of manufacturingHYUNDAI ELECTRONICS IND·Filed 1999·Granted Oct 15, 2002·13 cites·10 claims
- 2351US5804854AMemory cell arrayHYUNDAI ELECTRONICS IND·Filed 1997·Granted Sep 8, 1998·13 cites·6 claims
- 2450US8659067B2EEPROM cellGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Feb 25, 2014·0 cites·20 claims
- 2550US7259074B2Trench isolation method in flash memory deviceDONGBU HITEK CO LTD·Filed 2004·Granted Aug 21, 2007·4 cites·8 claims
- 2649US7122427B2Method of fabricating non-volatile memory deviceDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·3 cites·6 claims
- 2749US7056647B2Flash memory with reduced source resistance and fabrication method thereofDONGBUANAM SEMICONDUCTOR INC·Filed 2003·Granted Jun 6, 2006·3 cites·4 claims
- 2848US9054135B2Methods for fabricating integrated circuits with a high-voltage MOSFETGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Jun 9, 2015·0 cites·14 claims
- 2948US2016133637A1Guard ring for memory arrayGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Application pending·0 cites
- 3048US2010013003A1Non-volatile memory cell with a hybrid access transistorCHARTERED SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 3147US7122428B2Device isolation method of semiconductor memory device and flash memory device fabricating method using the sameDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·2 cites·4 claims
- 3247US6372576B2Method for manufacturing a floating gate in a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Apr 16, 2002·1 cites·5 claims
- 3346US9431408B2Methods for fabricating integrated circuits with a high-voltage MOSFETGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Aug 30, 2016·0 cites·20 claims
- 3445US2013034954A1Integrated circuit system including nitride layer technologyGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Application pending·0 cites
- 3545US2005202633A1Method of manufacturing nonvolatile memory cellHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 3644US10170437B1Via disguise to protect the security product from delayering and graphic design system (GDS) hacking and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
- 3743US9911665B2Integrated circuits, methods of forming the same, and methods of determining gate dielectric layer electrical thickness in integrated circuitsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Mar 6, 2018·0 cites·18 claims
- 3843US8541273B2Dielectric stackJUNG SUNG MUN·Filed 2010·Granted Sep 24, 2013·0 cites·20 claims
- 3943US6274418B1Method of manufacturing flash memory cellHYUNDAI ELECTRONICS IND·Filed 2000·Granted Aug 14, 2001·2 cites·6 claims
- 4042US7074682B2Method for fabricating a semiconductor device having self aligned source (SAS) crossing trenchDONGBUANAM SEMICONDUCTOR INC·Filed 2004·Granted Jul 11, 2006·1 cites·20 claims
- 4141US7553724B2Method for manufacturing code address memory cell by which a stack insulating film of an oxide film and a nitride film used as a dielectric film in a flash memory is used as a gate oxide filmHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jun 30, 2009·1 cites·9 claims
- 4241US7332378B2Integrated circuit memory system with dummy active regionCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Feb 19, 2008·0 cites·20 claims
- 4341US7183155B2Non-volatile memory device and fabricating method thereofDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Feb 27, 2007·0 cites·7 claims
- 4440US8283263B2Integrated circuit system including nitride layer technologyNAGARAD SRIPAD SHESHAGIRI·Filed 2006·Granted Oct 9, 2012·0 cites·10 claims
- 4540US7214581B2Method of fabricating flash memory deviceDONGBU ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·0 cites·5 claims
- 4640US6472752B1Flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 29, 2002·1 cites·17 claims
- 4739US2005074949A1Semiconductor device and a method for fabricating the semiconductor deviceDONGBU ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 4838US2003203574A1Method of manufacturing nonvolatile memory cellHYNIX SEMICONDUCTOR INC·Filed 2003·Application pending·0 cites
- 4937US2005139916A1High voltage semiconductor device and fabricating method thereofDONGBUANAM SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 5035US2005142746A1Method of fabricating flash memory deviceDONGBUANAM SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →