Inventor · disambiguated record
Sung-Taeg Kang
Also filed as: KANG SUNG G · KANG SUNG-TAEG
84 granted patents·19 pending applications·954 citations·filing 2002–2025
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD31FREESCALE SEMICONDUCTOR INC22KANG SUNG-TAEG14CYPRESS SEMICONDUCTOR CORP9HONG CHEONG MIN5
Top patents by PatentIndex Score
103 records- 0198US7285820B2Flash memory device using semiconductor fin and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·263 cites·24 claims
- 0297US8372699B2Method for forming a split-gate memory cellFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Feb 12, 2013·44 cites·20 claims
- 0396US9853039B1Split-gate flash cell formed on recessed substrateCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Dec 26, 2017·16 cites·19 claims
- 0496US8901632B1Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodologyFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Dec 2, 2014·40 cites·18 claims
- 0595US12029041B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2023·Granted Jul 2, 2024·1 cites·20 claims
- 0694US9275864B2Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gatesFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 1, 2016·19 cites·12 claims
- 0794US8969940B1Method of gate strapping in split-gate memory cell with inlaid gateFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 3, 2015·21 cites·20 claims
- 0893US7821055B2Stressed semiconductor device and method for makingFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Oct 26, 2010·37 cites·20 claims
- 0993US7811886B2Split-gate thin film storage NVM cell with reduced load-up/trap-up effectsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·33 cites·18 claims
- 1092US8530950B1Methods and structures for split gate memoryKANG SUNG-TAEG·Filed 2012·Granted Sep 10, 2013·15 cites·20 claims
- 1192US7985649B1Method of making a semiconductor structure useful in making a split gate non-volatile memory cellFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Jul 26, 2011·18 cites·15 claims
- 1290US7265411B2Non-volatile memory having multiple gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 4, 2007·20 cites·39 claims
- 1390US7005349B2Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment processSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 28, 2006·48 cites·35 claims
- 1489US9142566B2Method of forming different voltage devices with high-K metal gateFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Sep 22, 2015·10 cites·8 claims
- 1589US7579243B2Split gate memory cell methodFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 25, 2009·18 cites·20 claims
- 1689US7339232B2Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 4, 2008·15 cites·22 claims
- 1788US10872898B2Embedded non-volatile memory device and fabrication method of the sameCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Dec 22, 2020·4 cites·25 claims
- 1888US8877585B1Non-volatile memory (NVM) cell, high voltage transistor, and high-K and metal gate transistor integrationPERERA ASANGA H·Filed 2013·Granted Nov 4, 2014·11 cites·20 claims
- 1988US7511334B2Twin-ONO-type SONOS memorySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 31, 2009·15 cites·23 claims
- 2087US9368499B2Method of forming different voltage devices with high-k metal gateFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 14, 2016·5 cites·11 claims
- 2187US8853027B2Split gate flash cellFREESCALE SEMICONDUCTOR INC·Filed 2012·Granted Oct 7, 2014·9 cites·18 claims
- 2287US8173505B2Method of making a split gate memory cellHERRICK MATTHEW T·Filed 2008·Granted May 8, 2012·21 cites·10 claims
- 2387US7799634B2Method of forming nanocrystalsFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Sep 21, 2010·15 cites·20 claims
- 2487US7042045B2Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 9, 2006·40 cites·41 claims
- 2585US7408230B2EEPROM device having first and second doped regions that increase an effective channel lengthSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·10 cites·8 claims
- 2684US9129855B2Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodologyFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Sep 8, 2015·7 cites·18 claims
- 2783US9082650B2Integrated split gate non-volatile memory cell and logic structurePERERA ASANGA H·Filed 2013·Granted Jul 14, 2015·7 cites·19 claims
- 2883US7939880B2Split gate non-volatile memory cellFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted May 10, 2011·11 cites·21 claims
- 2983US7514739B2Nonvolatile semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 7, 2009·11 cites·8 claims
- 3082US7315057B2Split gate non-volatile memory devices and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 1, 2008·10 cites·17 claims
- 3179US9165652B2Split-gate memory cells having select-gate sidewall metal silicide regions and related manufacturing methodsKANG SUNG-TAEG·Filed 2012·Granted Oct 20, 2015·5 cites·21 claims
- 3278US7553725B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 30, 2009·8 cites·28 claims
- 3378US2025349342A1Staggered read recovery for improved read window budget in a three dimensional (3d) nand memory arrayIntel NDTM US LLC·Filed 2025·Application pending·0 cites
- 3477US10242996B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Mar 26, 2019·1 cites·20 claims
- 3577US8778742B1Methods and systems for gate dimension control in multi-gate structures for semiconductor devicesKANG SUNG-TAEG·Filed 2013·Granted Jul 15, 2014·4 cites·14 claims
- 3677US8178406B2Split gate device and method for formingKANG SUNG-TAEG·Filed 2007·Granted May 15, 2012·7 cites·12 claims
- 3777US7265410B2Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 4, 2007·6 cites·17 claims
- 3877US6794711B2Non-volatile memory device having select transistor structure and SONOS cell structure and method for fabricating the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 21, 2004·29 cites·15 claims
- 3976US7871886B2Nanocrystal memory with differential energy bands and method of formationFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jan 18, 2011·4 cites·13 claims
- 4075US7602008B2Split gate non-volatile memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·6 cites·10 claims
- 4175US7320920B2Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·5 cites·21 claims
- 4274US11690227B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2021·Granted Jun 27, 2023·0 cites·21 claims
- 4373US7411243B2Nonvolatile semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 12, 2008·5 cites·43 claims
- 4473US6844587B2Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 18, 2005·16 cites·13 claims
- 4572US8962416B1Split gate non-volatile memory cellWINSTEAD BRIAN A·Filed 2013·Granted Feb 24, 2015·3 cites·20 claims
- 4672US8329544B2Method for forming a semiconductor device having nanocrystalsKANG SUNG-TAEG·Filed 2011·Granted Dec 11, 2012·3 cites·20 claims
- 4772US7902022B2Self-aligned in-laid split gate memory and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Mar 8, 2011·5 cites·10 claims
- 4871US9318568B2Integration of a non-volatile memory (NVM) cell and a logic transistor and method thereforPERERA ASANGA H·Filed 2014·Granted Apr 19, 2016·2 cites·16 claims
- 4971US8724399B2Methods and systems for erase biasing of split-gate non-volatile memory cellsWINSTEAD BRIAN A·Filed 2012·Granted May 13, 2014·3 cites·20 claims
- 5070US8048738B1Method for forming a split gate deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Nov 1, 2011·3 cites·13 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →