Inventor · disambiguated record
Sung-Kwan Kang
Also filed as: KANG SUNG-KWAN
29 granted patents·15 pending applications·80 citations·filing 2006–2024
95Inventor score
Files withAPPLIED MATERIALS INC32SAMSUNG ELECTRONICS CO LTD7EMERGING MEMORY & LOGIC SOL1ISOLUTION CO LTD1KANG SUNG-KWAN1
Top patents by PatentIndex Score
44 records- 0198US11049695B2Metal contact landing structureMICROMATERIALS LLC·Filed 2020·Granted Jun 29, 2021·8 cites·18 claims
- 0297US11295786B23D dram structure with high mobility channelAPPLIED MATERIALS INC·Filed 2020·Granted Apr 5, 2022·5 cites·8 claims
- 0396US11818877B2Three-dimensional dynamic random access memory (DRAM) and methods of forming the sameAPPLIED MATERIALS INC·Filed 2021·Granted Nov 14, 2023·2 cites·18 claims
- 0496US10790287B2Reducing gate induced drain leakage in DRAM wordlineAPPLIED MATERIALS INC·Filed 2018·Granted Sep 29, 2020·12 cites·10 claims
- 0594US10998329B2Methods and apparatus for three dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2019·Granted May 4, 2021·11 cites·9 claims
- 0693US11621266B2Method of testing a gap fill for DRAMAPPLIED MATERIALS INC·Filed 2021·Granted Apr 4, 2023·2 cites·11 claims
- 0793US10964717B2Methods and apparatus for three-dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2019·Granted Mar 30, 2021·8 cites·20 claims
- 0891US11552082B2Reducing gate induced drain leakage in DRAM wordlineAPPLIED MATERIALS INC·Filed 2020·Granted Jan 10, 2023·2 cites·10 claims
- 0989US10529602B1Method and apparatus for substrate fabricationAPPLIED MATERIALS INC·Filed 2018·Granted Jan 7, 2020·5 cites·20 claims
- 1086US11171141B2Gap fill methods of forming buried word lines in DRAM without forming bottom voidsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 9, 2021·2 cites·20 claims
- 1173US7560319B2Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·4 cites·20 claims
- 1271US7871906B2Storage nodes including a phase chang layer and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·6 cites·9 claims
- 1371US7522280B2Apparatus and method for equalizing illumination of light sources for digital image test member, and apparatus and method for testing color of digital image using the sameEMERGING MEMORY & LOGIC SOL·Filed 2007·Granted Apr 21, 2009·7 cites·20 claims
- 1471US2023157004A13-d dram structures and methods of manufactureAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1569US11545504B2Methods and apparatus for three dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2021·Granted Jan 3, 2023·0 cites·13 claims
- 1669US11430801B2Methods and apparatus for three dimensional NAND structure fabricationAPPLIED MATERIALS INC·Filed 2021·Granted Aug 30, 2022·0 cites·13 claims
- 1769US10293441B2Apparatus and method for aligning optical axes of lenses and assembling camera moduleISOLUTION CO LTD·Filed 2014·Granted May 21, 2019·4 cites·6 claims
- 1865US11587930B23-D DRAM structures and methods of manufactureAPPLIED MATERIALS INC·Filed 2021·Granted Feb 21, 2023·0 cites·6 claims
- 1963US12482749B2L-type wordline connection structure for three-dimensional memoryAPPLIED MATERIALS INC·Filed 2022·Granted Nov 25, 2025·0 cites·9 claims
- 2062US12477723B2Three dimensional memory device and method of fabricationAPPLIED MATERIALS INC·Filed 2022·Granted Nov 18, 2025·0 cites·11 claims
- 2162US11763856B23-D DRAM structure with vertical bit-lineAPPLIED MATERIALS INC·Filed 2021·Granted Sep 19, 2023·0 cites·18 claims
- 2262US7396761B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·1 cites·15 claims
- 2361US11765889B2Method to scale dram with self aligned bit line processAPPLIED MATERIALS INC·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 2461US7470603B2Methods of fabricating semiconductor devices having laser-formed single crystalline active structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 30, 2008·1 cites·27 claims
- 2561US2024365551A13d nand cells with enhanced erase speed through dipole engineering and methods of making the sameAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2661US2024098971A1Single gate three-dimensional (3d) dynamic random-access memory (dram) devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2760US12148475B2Selection gate separation for 3D NANDAPPLIED MATERIALS INC·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 2860US11749315B23D DRAM structure with high mobility channelAPPLIED MATERIALS INC·Filed 2021·Granted Sep 5, 2023·0 cites·12 claims
- 2959US2020202900A13-D DRAM Structure With Vertical Bit-LineAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 3058US12387978B2Ru liner above a barrier layerAPPLIED MATERIALS INC·Filed 2022·Granted Aug 12, 2025·0 cites·14 claims
- 3158US11587796B23D-NAND memory cell structureAPPLIED MATERIALS INC·Filed 2021·Granted Feb 21, 2023·0 cites·17 claims
- 3258US2020235104A1Cap Layer For Bit Line Resistance ReductionAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 3358US2023309295A1Support layer for small pitch fillAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3457US2024090213A1Sacrificial layer for forming merged high aspect ratio contacts in 3d nand memory deviceAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3555US10700072B2Cap layer for bit line resistance reductionAPPLIED MATERIALS INC·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 3655US2024038833A1Carbon mold for dram capacitorAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3755US2023040627A1Selection gate structure and fabrication method for 3d memoryAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3855US2024315004A1Memory structure with 4f2 optimized cell layoutAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3949US2024087882A1Fluorine-doped silicon-containing materialsAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4044US2007044706A1Method of forming a crystalline structure and a method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4143US2007007532A1Stacked semiconductor device and related methodKANG SUNG-KWAN·Filed 2006·Application pending·0 cites
- 4242US8039900B2Stacked semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 18, 2011·0 cites·5 claims
- 4340US2008210922A1Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4434US2011266627A1Semiconductor deviceLEE SEUNG-HUN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →