Inventor · disambiguated record
Sundar Narayanan
Also filed as: NARAYANAN SUNDAR
35 granted patents·8 pending applications·271 citations·filing 2001–2024
97Inventor score
Files withCROSSBAR INC21CYPRESS SEMICONDUCTOR CORP14APPLIED MATERIALS INC4EXXONMOBIL CHEMICAL PATENTS INC1ORACLE INT CORP1
Top patents by PatentIndex Score
43 records- 0197US9595670B1Resistive random access memory (RRAM) cell and method for forming the RRAM cellCROSSBAR INC·Filed 2014·Granted Mar 14, 2017·25 cites·20 claims
- 0296US9697874B1Monolithic memory comprising 1T1R code memory and 1TnR storage class memoryCROSSBAR INC·Filed 2016·Granted Jul 4, 2017·24 cites·40 claims
- 0393US9741765B1Monolithically integrated resistive memory using integrated-circuit foundry compatible processesCROSSBAR INC·Filed 2014·Granted Aug 22, 2017·16 cites·20 claims
- 0490US10319908B2Integrative resistive memory in backend metal layersCROSSBAR INC·Filed 2015·Granted Jun 11, 2019·9 cites·20 claims
- 0589US10062845B1Flatness of memory cell surfacesCROSSBAR INC·Filed 2017·Granted Aug 28, 2018·6 cites·20 claims
- 0688US9209396B2Regulating interface layer growth with N2O for two-terminal memoryCROSSBAR INC·Filed 2013·Granted Dec 8, 2015·6 cites·20 claims
- 0787US10290801B2Scalable silicon based resistive memory deviceCROSSBAR INC·Filed 2015·Granted May 14, 2019·6 cites·20 claims
- 0886US9425046B1Method for surface roughness reduction after silicon germanium thin film depositionCROSSBAR INC·Filed 2014·Granted Aug 23, 2016·7 cites·23 claims
- 0986US6943126B1Deuterium incorporated nitrideCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Sep 13, 2005·33 cites·15 claims
- 1085US10693062B2Regulating interface layer formation for two-terminal memoryCROSSBAR INC·Filed 2016·Granted Jun 23, 2020·3 cites·20 claims
- 1183US9437814B1Mitigating damage from a chemical mechanical planarization processCROSSBAR INC·Filed 2014·Granted Sep 6, 2016·5 cites·24 claims
- 1283US7351663B1Removing whisker defectsCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Apr 1, 2008·11 cites·20 claims
- 1383US6774012B1Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewallCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Aug 10, 2004·29 cites·21 claims
- 1480US10522754B2Liner layer for dielectric block layerCROSSBAR INC·Filed 2017·Granted Dec 31, 2019·3 cites·18 claims
- 1577US8445381B2Oxide-nitride stack gate dielectricRAMKUMAR KRISHNASWAMY·Filed 2007·Granted May 21, 2013·4 cites·8 claims
- 1676US7189652B1Selective oxidation of gate stackCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Mar 13, 2007·21 cites·15 claims
- 1771US10749110B1Memory stack liner comprising dielectric block layer materialCROSSBAR INC·Filed 2017·Granted Aug 18, 2020·1 cites·20 claims
- 1870US6794269B1Method for and structure formed from fabricating a relatively deep isolation structureCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Sep 21, 2004·17 cites·19 claims
- 1968US10096653B2Monolithically integrated resistive memory using integrated-circuit foundry compatible processesCROSSBAR INC·Filed 2014·Granted Oct 9, 2018·1 cites·20 claims
- 2066US6803321B1Nitride spacer formationCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Oct 12, 2004·12 cites·16 claims
- 2162US11944020B2Using aluminum as etch stop layerCROSSBAR INC·Filed 2020·Granted Mar 26, 2024·0 cites·19 claims
- 2262US7371637B2Oxide-nitride stack gate dielectricCYPRESS SEMICONDUCTOR CORP·Filed 2004·Granted May 13, 2008·6 cites·12 claims
- 2360US2024086597A1Generation and utilization of virtual features for process modelingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2460US2024427308A1Substrate process operation analysis application and generation of visualizationsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2559US2024152675A1Determining substrate characteristics by virtual substrate measurementAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2659US2024384181A1Methods for Reducing Fouling in Tar Upgrading ProcessesEXXONMOBIL CHEMICAL PATENTS INC·Filed 2022·Application pending·0 cites
- 2757US6964929B1Method of forming a narrow gate, and product produced therebyCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Nov 15, 2005·6 cites·18 claims
- 2857US6803330B2Method for growing ultra thin nitrided oxideCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Oct 12, 2004·7 cites·20 claims
- 2956US6905893B1Method and structure for determining a concentration profile of an impurity within a semiconductor layerCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Jun 14, 2005·4 cites·20 claims
- 3056US2025094210A1Processing Transaction Data At Different Levels Of GranularityORACLE INT CORP·Filed 2024·Application pending·0 cites
- 3156US2025021832A1Interactive data labeling for substrate generation processesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3254US7172914B1Method of making uniform oxide layerCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Feb 6, 2007·4 cites·19 claims
- 3352US10873023B2Using aluminum as etch stop layerCROSSBAR INC·Filed 2017·Granted Dec 22, 2020·0 cites·20 claims
- 3451US6773975B1Formation of a shallow trench isolation structure in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Aug 10, 2004·4 cites·16 claims
- 3548US6664120B1Method and structure for determining a concentration profile of an impurity within a semiconductor layerCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Dec 16, 2003·1 cites·29 claims
- 3645US11997932B2Resistive switching memory having confined filament formation and methods thereofCROSSBAR INC·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 3744US12075712B2Resistive switching memory devices and method(s) for forming the resistive switching memory devicesCROSSBAR INC·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 3842US11793093B2Resistive random access memory and fabrication techniquesCROSSBAR INC·Filed 2018·Granted Oct 17, 2023·0 cites·20 claims
- 3941US9343668B2Low temperature in-situ doped silicon-based conductor material for memory cellCROSSBAR INC·Filed 2013·Granted May 17, 2016·0 cites·20 claims
- 4038US10115819B2Recessed high voltage metal oxide semiconductor transistor for RRAM cellCROSSBAR INC·Filed 2015·Granted Oct 30, 2018·0 cites·21 claims
- 4137US7094707B1Method of forming nitrided oxide in a hot wall single wafer furnaceCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Aug 22, 2006·0 cites·21 claims
- 4237US2003073255A1Novel self monitoring process for ultra thin gate oxidationFiled 2001·Application pending·0 cites
- 4337US2022320431A1Varying nitrogen content in switching layer of two-terminal resistive switching devicesCROSSBAR INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →