Inventor · disambiguated record
Suraj Rengarajan
Also filed as: RENGARAJAN SURAJ
19 granted patents·12 pending applications·448 citations·filing 1999–2023
95Inventor score
Top patents by PatentIndex Score
31 records- 0197US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 0292US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 0391US6911124B2Method of depositing a TaN seed layerAPPLIED MATERIALS INC·Filed 2002·Granted Jun 28, 2005·52 cites·26 claims
- 0487US6207558B1Barrier applications for aluminum planarizationAPPLIED MATERIALS INC·Filed 1999·Granted Mar 27, 2001·77 cites·34 claims
- 0586US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 0686US6589890B2Precleaning process for metal plug that minimizes damage to low-κ dielectricAPPLIED MATERIALS INC·Filed 2002·Granted Jul 8, 2003·32 cites·16 claims
- 0786US6368880B2Barrier applications for aluminum planarizationAPPLIED MATERIALS INC·Filed 2001·Granted Apr 9, 2002·33 cites·16 claims
- 0884US6346489B1Precleaning process for metal plug that minimizes damage to low-κ dielectricAPPLIED MATERIALS INC·Filed 1999·Granted Feb 12, 2002·61 cites·33 claims
- 0983US7687909B2Metal / metal nitride barrier layer for semiconductor device applicationsAPPLIED MATERIALS INC·Filed 2007·Granted Mar 30, 2010·7 cites·13 claims
- 1081US6579730B2Monitoring process for oxide removalAPPLIED MATERIALS INC·Filed 2001·Granted Jun 17, 2003·27 cites·31 claims
- 1177US8696875B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2002·Granted Apr 15, 2014·15 cites·61 claims
- 1276US7749361B2Multi-component doping of copper seed layerAPPLIED MATERIALS INC·Filed 2006·Granted Jul 6, 2010·3 cites·12 claims
- 1368US6313033B1Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applicationsAPPLIED MATERIALS INC·Filed 1999·Granted Nov 6, 2001·33 cites·11 claims
- 1464US6908865B2Method and apparatus for cleaning substratesAPPLIED MATERIALS INC·Filed 2001·Granted Jun 21, 2005·10 cites·6 claims
- 1563US7014887B1Sequential sputter and reactive precleans of vias and contactsAPPLIED MATERIALS INC·Filed 1999·Granted Mar 21, 2006·26 cites·17 claims
- 1661US12322592B2Deposition of silicon-based dielectric filmsAPPLIED MATERIALS INC·Filed 2022·Granted Jun 3, 2025·0 cites·18 claims
- 1759US6936842B2Method and apparatus for process monitoringAPPLIED MATERIALS INC·Filed 2002·Granted Aug 30, 2005·4 cites·11 claims
- 1859US2022309670A1Method and system for visualizing information on gigapixels whole slide imageAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1957US2009233438A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2056US12505539B2Cell body segmentation using machine learningAPPLIED MATERIALS INC·Filed 2023·Granted Dec 23, 2025·0 cites·16 claims
- 2155US2023408413A1Single sensor imaging spectroscopy for detecting nanoparticles to qualify clean chamber partsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2255US2009053888A1Method of depositing a diffusion barrier layer which provides an improved interconnectAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2353US2018327893A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 2451US2005255691A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2551US2024145230A1Semiconductor cleaning using plasma-free precursorsAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2650US12475555B2Artificial intelligence-based hyperspectrally resolved detection of anomalous cellsAPPLIED MATERIALS INC·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 2748US2005272254A1Method of depositing low resistivity barrier layers for copper interconnectsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2840US2008014732A1Application of PVD W/WN bilayer barrier to aluminum bondpad in wire bondingLI YANPING·Filed 2006·Application pending·0 cites
- 2937US2003216035A1Method and apparatus for sputter depositionAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3037US2003116427A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3136US2002142589A1Method of obtaining low temperature alpha-ta thin films using wafer biasAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →