Inventor · disambiguated record
Sven Beyer
Also filed as: BEYER SVEN
84 granted patents·19 pending applications·583 citations·filing 2006–2024
99Inventor score
Files withGLOBALFOUNDRIES INC39BEYER SVEN15SCHEIPER THILO12ADVANCED MICRO DEVICES INC9HOENTSCHEL JAN6
Top patents by PatentIndex Score
103 records- 0197US10033383B1Programmable logic elements and methods of operating the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 24, 2018·63 cites·18 claims
- 0297US9583640B1Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structureGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 28, 2017·30 cites·20 claims
- 0396US9793372B1Integrated circuit including a dummy gate structure and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 17, 2017·14 cites·10 claims
- 0495US9590118B1Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·14 cites·15 claims
- 0595US9548312B1Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure including a nonvolatile memory cellGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 17, 2017·18 cites·11 claims
- 0695US8247275B2Strain engineering in three-dimensional transistors based on globally strained semiconductor base layersHOENTSCHEL JAN·Filed 2010·Granted Aug 21, 2012·24 cites·16 claims
- 0794US8357604B2Work function adjustment in high-k gate stacks for devices of different threshold voltageGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 22, 2013·19 cites·17 claims
- 0894US7741167B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 22, 2010·26 cites·10 claims
- 0993US8815741B1Method of forming a semiconductor structure including an implantation of ions into a layer of spacer materialGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 26, 2014·13 cites·20 claims
- 1093US8241977B2Short channel transistor with reduced length variation by using amorphous electrode material during implantationSCHEIPER THILO·Filed 2010·Granted Aug 14, 2012·12 cites·19 claims
- 1193US7608499B2Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Oct 27, 2009·23 cites·24 claims
- 1292US10163933B1Ferro-FET device with buried buffer/ferroelectric layer stackGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·8 cites·10 claims
- 1392US9608112B2BULEX contacts in advanced FDSOI techniquesGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 28, 2017·12 cites·18 claims
- 1492US7943462B1Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacerGLOBALFOUNDRIES INC·Filed 2010·Granted May 17, 2011·14 cites·20 claims
- 1591US8445344B2Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterningCARTER RICHARD·Filed 2010·Granted May 21, 2013·17 cites·21 claims
- 1691US8409942B2Replacement gate approach based on a reverse offset spacer applied prior to work function metal depositionSCHEIPER THILO·Filed 2010·Granted Apr 2, 2013·13 cites·20 claims
- 1790US8048792B2Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder materialGLOBALFOUNDRIES INC·Filed 2010·Granted Nov 1, 2011·14 cites·19 claims
- 1889US8791509B2Multiple gate transistor having homogenously silicided fin end portionsBEYER SVEN·Filed 2009·Granted Jul 29, 2014·20 cites·20 claims
- 1988US8198152B2Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materialsBEYER SVEN·Filed 2010·Granted Jun 12, 2012·10 cites·14 claims
- 2087US8338894B2Increased depth of drain and source regions in complementary transistors by forming a deep drain and source region prior to a cavity etchGRIEBENOW UWE·Filed 2010·Granted Dec 25, 2012·8 cites·19 claims
- 2185US8367495B2Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric materialGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 5, 2013·8 cites·20 claims
- 2285US8232188B2High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2010·Granted Jul 31, 2012·8 cites·9 claims
- 2385US7799682B2Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistorGLOBALFOUNDRIES INC·Filed 2007·Granted Sep 21, 2010·12 cites·13 claims
- 2485US7601641B1Two step optical planarizing layer etchGLOBAL FOUNDRIES INC·Filed 2008·Granted Oct 13, 2009·10 cites·18 claims
- 2584US9871050B1Flash memory deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 16, 2018·4 cites·12 claims
- 2684US9698179B2Capacitor structure and method of forming a capacitor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·4 cites·20 claims
- 2784US8669151B2High-K metal gate electrode structures formed at different process stages of a semiconductor deviceHOENTSCHEL JAN·Filed 2010·Granted Mar 11, 2014·6 cites·17 claims
- 2884US8508008B2Optical signal transfer in a semiconductor device by using monolithic opto-electronic componentsGRIEBENOW UWE·Filed 2010·Granted Aug 13, 2013·10 cites·17 claims
- 2984US8404550B2Performance enhancement in PFET transistors comprising high-k metal gate stack by increasing dopant confinementSCHEIPER THILO·Filed 2010·Granted Mar 26, 2013·7 cites·16 claims
- 3084US7547610B2Method of making a semiconductor device comprising isolation trenches inducing different types of strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 16, 2009·11 cites·12 claims
- 3183US8653605B2Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanumCARTER RICHARD·Filed 2012·Granted Feb 18, 2014·6 cites·6 claims
- 3283US8198192B2Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilizationCARTER RICHARD·Filed 2010·Granted Jun 12, 2012·6 cites·18 claims
- 3382US8455314B2Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stageGRIEBENOW UWE·Filed 2011·Granted Jun 4, 2013·5 cites·16 claims
- 3482US8329531B2Strain memorization in strained SOI substrates of semiconductor devicesHOENTSCHEL JAN·Filed 2010·Granted Dec 11, 2012·6 cites·14 claims
- 3582US8283232B2Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processingBEYER SVEN·Filed 2010·Granted Oct 9, 2012·7 cites·25 claims
- 3681US9184095B2Contact bars with reduced fringing capacitance in a semiconductor deviceSCHEIPER THILO·Filed 2010·Granted Nov 10, 2015·6 cites·20 claims
- 3780US10157996B2Methods for forming integrated circuits that include a dummy gate structureGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
- 3879US8916433B2Superior integrity of high-k metal gate stacks by capping STI regionsSCHEIPER THILO·Filed 2012·Granted Dec 23, 2014·5 cites·22 claims
- 3979US7893503B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2010·Granted Feb 22, 2011·4 cites·9 claims
- 4079US7504287B2Methods for fabricating an integrated circuitADVANCED MICRO DEVICES INC·Filed 2007·Granted Mar 17, 2009·8 cites·15 claims
- 4178US8748281B2Enhanced confinement of sensitive materials of a high-K metal gate electrode structureHOENTSCHEL JAN·Filed 2010·Granted Jun 10, 2014·5 cites·1 claims
- 4278US8378432B2Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloyGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 19, 2013·5 cites·25 claims
- 4377US9040405B2Gate electrode with a shrink spacerGLOBALFOUNDRIES INC·Filed 2013·Granted May 26, 2015·6 cites·16 claims
- 4477US8343837B2Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanumGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 1, 2013·4 cites·19 claims
- 4576US10249633B2Flash memory deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·2 cites·20 claims
- 4676US8652956B2High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2012·Granted Feb 18, 2014·4 cites·16 claims
- 4776US8039335B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2011·Granted Oct 18, 2011·3 cites·3 claims
- 4874US8318598B2Contacts and vias of a semiconductor device formed by a hard mask and double exposureBEYER SVEN·Filed 2009·Granted Nov 27, 2012·6 cites·25 claims
- 4972US8524591B2Maintaining integrity of a high-K gate stack by passivation using an oxygen plasmaBEYER SVEN·Filed 2010·Granted Sep 3, 2013·3 cites·22 claims
- 5071US8951901B2Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistryBEYER SVEN·Filed 2011·Granted Feb 10, 2015·2 cites·18 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →