Inventor · disambiguated record
Svetlana B. Radovanov
Also filed as: RADOVANOV SVETLANA · RADOVANOV SVETLANA B
54 granted patents·11 pending applications·400 citations·filing 2000–2021
98Inventor score
Files withVARIAN SEMICONDUCTOR EQUIPMENT23VARIAN SEMICONDUCTOR EQUIPMENT ASS INC19APPLIED MATERIALS INC10GODET LUDOVIC3RADOVANOV SVETLANA3
Top patents by PatentIndex Score
65 records- 0198US7767977B1Ion sourceVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2009·Granted Aug 3, 2010·72 cites·16 claims
- 0297US11127557B1Ion source with single-slot tubular cathodeAPPLIED MATERIALS INC·Filed 2020·Granted Sep 21, 2021·5 cites·20 claims
- 0397US8101510B2Plasma processing apparatusGODET LUDOVIC·Filed 2009·Granted Jan 24, 2012·50 cites·19 claims
- 0496US9230773B1Ion beam uniformity controlVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2014·Granted Jan 5, 2016·20 cites·11 claims
- 0596US7888653B2Techniques for independently controlling deflection, deceleration and focus of an ion beamVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2009·Granted Feb 15, 2011·33 cites·28 claims
- 0694US8664098B2Plasma processing apparatusGODET LUDOVIC·Filed 2012·Granted Mar 4, 2014·7 cites·17 claims
- 0794US6998625B1Ion implanter having two-stage deceleration beamlineVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2000·Granted Feb 14, 2006·58 cites·57 claims
- 0891US7700925B2Techniques for providing a multimode ion sourceVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2007·Granted Apr 20, 2010·11 cites·14 claims
- 0990US9840772B2Method of improving ion beam quality in a non-mass-analyzed ion implantation systemVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Dec 12, 2017·2 cites·20 claims
- 1089US9478399B2Multi-aperture extraction system for angled ion beamVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Oct 25, 2016·5 cites·20 claims
- 1189US9232628B2Method and system for plasma-assisted ion beam processingVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Jan 5, 2016·4 cites·11 claims
- 1289US9064795B2Technique for processing a substrateVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Jun 23, 2015·8 cites·3 claims
- 1389US8519353B2Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beamRADOVANOV SVETLANA·Filed 2010·Granted Aug 27, 2013·11 cites·17 claims
- 1488US9514912B2Control of ion angular distribution of ion beams with hidden deflection electrodeVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Dec 6, 2016·9 cites·20 claims
- 1587US10748738B1Ion source with tubular cathodeAPPLIED MATERIALS INC·Filed 2019·Granted Aug 18, 2020·4 cites·20 claims
- 1687US8604443B2System and method for manipulating an ion beamSINCLAIR FRANK·Filed 2010·Granted Dec 10, 2013·8 cites·13 claims
- 1787US8357912B2Techniques for providing a multimode ion sourceVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2010·Granted Jan 22, 2013·6 cites·17 claims
- 1887US7279687B2Technique for implementing a variable aperture lens in an ion implanterVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2005·Granted Oct 9, 2007·11 cites·17 claims
- 1986US9865430B2Boron implanting using a co-gasVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Jan 9, 2018·3 cites·12 claims
- 2086US9677171B2Method of improving ion beam quality in a non-mass-analyzed ion implantation systemVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Jun 13, 2017·2 cites·16 claims
- 2186US9288889B2Apparatus and techniques for energetic neutral beam processingVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Mar 15, 2016·7 cites·19 claims
- 2286US9093372B2Technique for processing a substrateVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Jul 28, 2015·6 cites·13 claims
- 2386US7675047B2Technique for shaping a ribbon-shaped ion beamVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2006·Granted Mar 9, 2010·9 cites·20 claims
- 2483US9297063B2Plasma potential modulated ion implantation systemRADOVANOV SVETLANA B·Filed 2012·Granted Mar 29, 2016·4 cites·20 claims
- 2581US10923306B2Ion source with biased extraction plateAPPLIED MATERIALS INC·Filed 2019·Granted Feb 16, 2021·2 cites·18 claims
- 2680US10468224B2Apparatus and method for controlling ion beam properties using energy filterVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Nov 5, 2019·2 cites·16 claims
- 2779US9922795B2High brightness ion beam extraction using bias electrodes and magnets proximate the extraction apertureVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Mar 20, 2018·2 cites·18 claims
- 2878US10290466B2Boron implanting using a co-gasVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted May 14, 2019·1 cites·19 claims
- 2977US8669538B1Method of improving ion beam quality in an implant systemVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Mar 11, 2014·3 cites·20 claims
- 3077US7579605B2Multi-purpose electrostatic lens for an ion implanter systemVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2006·Granted Aug 25, 2009·4 cites·32 claims
- 3175USD1051838SSingle-slot tubular cathodeAPPLIED MATERIALS INC·Filed 2021·Granted Nov 19, 2024·0 cites·1 claims
- 3275US8481960B2Deceleration lensRADOVANOV SVETLANA·Filed 2011·Granted Jul 9, 2013·4 cites·20 claims
- 3374US11631567B2Ion source with single-slot tubular cathodeAPPLIED MATERIALS INC·Filed 2021·Granted Apr 18, 2023·0 cites·18 claims
- 3474US9613777B2Uniformity control using adjustable internal antennasVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Apr 4, 2017·2 cites·19 claims
- 3570US7339179B2Technique for providing a segmented electrostatic lens in an ion implanterVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2006·Granted Mar 4, 2008·2 cites·19 claims
- 3669US11049691B2Ion beam quality control using a movable mass resolving deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Jun 29, 2021·1 cites·11 claims
- 3769US7309997B1Monitor system and method for semiconductor processesVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2000·Granted Dec 18, 2007·14 cites·19 claims
- 3868US11424097B2Ion source with tubular cathodeAPPLIED MATERIALS INC·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 3968US9734991B2Negative ribbon ion beams from pulsed plasmasVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 15, 2017·1 cites·20 claims
- 4068US8466431B2Techniques for improving extracted ion beam quality using high-transparency electrodesBUFF JAMES S·Filed 2009·Granted Jun 18, 2013·3 cites·20 claims
- 4165US8309935B2End terminations for electrodes used in ion implantation systemsSINCLAIR FRANK·Filed 2009·Granted Nov 13, 2012·1 cites·2 claims
- 4264US11600473B2Ion source with biased extraction plateAPPLIED MATERIALS INC·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 4358US10290462B2High brightness ion beam extraction using bias electrodes and magnets proximate the extraction apertureVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted May 14, 2019·0 cites·22 claims
- 4458US2018087148A1Method Of Improving Ion Beam Quality In A Non-Mass-Analyzed Ion Implantation SystemVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Application pending·0 cites
- 4557US10290470B2Negative ribbon ion beams from pulsed plasmasVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted May 14, 2019·0 cites·14 claims
- 4656US9520259B2Ion beam uniformity controlVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Dec 13, 2016·0 cites·17 claims
- 4753US9536712B2Apparatus and method for mass analyzed ion beamVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Jan 3, 2017·0 cites·20 claims
- 4851US10049861B2Inductively coupled RF plasma source with magnetic confinement and Faraday shieldingVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 14, 2018·0 cites·15 claims
- 4951US2009121149A1Techniques for shaping an ion beamVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2007·Application pending·0 cites
- 5050US2009121122A1Techniques for measuring and controlling ion beam angle and density uniformityVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2007·Application pending·0 cites
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →