Inventor · disambiguated record
Tae-Hyuk Ahn
Also filed as: AHN TAE H · AHN TAE-HYUK
36 granted patents·14 pending applications·968 citations·filing 1990–2020
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD38AHN TAE-HYUK1BAE YONG-KUG1LEE SEOK K1SAMSUG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
50 records- 0199US6617253B1Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 9, 2003·465 cites·35 claims
- 0296US6461911B2Semiconductor memory device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 8, 2002·129 cites·21 claims
- 0392US7053435B2Electronic devices including electrodes with insulating spacers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·57 cites·5 claims
- 0485US5087857APlasma generating apparatus and method using modulation systemSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Feb 11, 1992·46 cites·2 claims
- 0584US7534726B2Method of forming a recess channel trench pattern, and fabricating a recess channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 19, 2009·8 cites·6 claims
- 0684US7511328B2Semiconductor device having raised cell landing pad and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 31, 2009·13 cites·9 claims
- 0784US7314795B2Methods of forming electronic devices including electrodes with insulating spacers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 1, 2008·8 cites·39 claims
- 0882US6573602B2Semiconductor device with a self-aligned contact and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 3, 2003·30 cites·14 claims
- 0981US5491103AMethod for manufacturing a capacitor structure of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Feb 13, 1996·44 cites·26 claims
- 1079US7851354B2Semiconductor memory device having local etch stopper and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 14, 2010·6 cites·13 claims
- 1178US6573551B1Semiconductor memory device having self-aligned contact and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 3, 2003·23 cites·10 claims
- 1275US7132708B2Semiconductor memory device having self-aligned contacts and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 7, 2006·6 cites·4 claims
- 1375US6719808B1Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard maskSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 13, 2004·15 cites·16 claims
- 1474US6461975B1Method of etching insulating layer in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 8, 2002·16 cites·14 claims
- 1572US6885052B2Semiconductor memory device having self-aligned contacts and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 26, 2005·17 cites·15 claims
- 1671US7531414B2Method of manufacturing integrated circuit device including recessed channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·4 cites·13 claims
- 1771US7462899B2Semiconductor memory device having local etch stopper and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 9, 2008·5 cites·14 claims
- 1871US6653228B2Method for preparing semiconductor including formation of contact hole using difluoromethane gasSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 25, 2003·14 cites·10 claims
- 1969US8169012B2Semiconductor device and method of fabricating the semiconductor deviceBAE YONG-KUG·Filed 2008·Granted May 1, 2012·6 cites·14 claims
- 2068US8017485B2Methods of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 13, 2011·4 cites·18 claims
- 2168US7205199B2Method of forming a recess channel trench pattern, and fabricating a recess channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·10 cites·10 claims
- 2267US6451663B1Method of manufacturing a cylindrical storage node in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 17, 2002·11 cites·11 claims
- 2364US7326619B2Method of manufacturing integrated circuit device including recessed channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 5, 2008·10 cites·20 claims
- 2462US7682778B2Methods of forming contact plugs in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 23, 2010·1 cites·11 claims
- 2561US7888725B2Electronic devices including electrode walls with insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·1 cites·17 claims
- 2657US6690093B2Metal contact structure in semiconductor device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 10, 2004·7 cites·12 claims
- 2752US7491601B2Methods of forming electronic devices including electrodes with insulating spacers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 17, 2009·0 cites·22 claims
- 2852US6777341B2Method of forming a self-aligned contact, and method of fabricating a semiconductor device having a self-aligned contactSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 17, 2004·5 cites·20 claims
- 2952US2008064206A1Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3052US2009206399A1Method of forming a recess channel trench pattern, and fabricating a recess channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3150US2007234538A1Plurality of capacitors employing holding layer patterns and method of fabricating the sameAHN TAE-HYUK·Filed 2007·Application pending·0 cites
- 3249US7312121B2Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 25, 2007·0 cites·10 claims
- 3347US7326621B2Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrateSAMSUG ELECTRONICS CO LTD·Filed 2004·Granted Feb 5, 2008·4 cites·24 claims
- 3446US7491344B2Method for etching an object using a plasma and an object etched by a plasmaSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 17, 2009·1 cites·23 claims
- 3546US2021147929A1Immune receptor analysis as diagnostic assayUNIV SAINT LOUIS·Filed 2020·Application pending·0 cites
- 3645US2005164512A1Method of manufacturing semiconductor deviceFiled 2005·Application pending·0 cites
- 3743US7074725B2Method for forming a storage node of a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 11, 2006·1 cites·25 claims
- 3843US6927127B2Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 9, 2005·0 cites·9 claims
- 3942US2004185664A1Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard maskFiled 2004·Application pending·0 cites
- 4042US2009014833A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4141US6784097B2Method of manufacturing a semiconductor device with a self-aligned contactSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 31, 2004·0 cites·10 claims
- 4239US6682975B2Semiconductor memory device having self-aligned contact and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 27, 2004·0 cites·10 claims
- 4339US2005042837A1Method of controlling depth of trench in shallow trench isolation and method of forming trench for isolation using the sameFiled 2004·Application pending·0 cites
- 4439US2006134875A1Method of forming storage node of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4539US2005245073A1Method for forming contact plug of semiconductor deviceLEE SEOK K·Filed 2004·Application pending·0 cites
- 4638US2005093046A1Plurality of capacitors employing holding layer patterns and method of fabricating the sameFiled 2004·Application pending·0 cites
- 4736US2002024093A1Semiconductor device with self-aligned contact structure employing dual spacers and method of manufacturing the sameFiled 2001·Application pending·0 cites
- 4835US2001045666A1Semiconductor device having self-aligned contact and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Application pending·0 cites
- 4935US2004063287A1Semiconductor device and method of manufacturing the sameFiled 2003·Application pending·0 cites
- 5026US5089436AMethod for fabricating a semiconductor device by slope etching a polysiliow layerSAMSUNG SEMICONDUCTOR TELE·Filed 1990·Granted Feb 18, 1992·1 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →