Inventor · disambiguated record
Tanmay Kumar
Also filed as: KUMAR TANMAY
88 granted patents·17 pending applications·1,675 citations·filing 2000–2021
99Inventor score
Top patents by PatentIndex Score
105 records- 0199US7915164B2Method for forming doped polysilicon via connecting polysilicon layersSANDISK 3D LLC·Filed 2010·Granted Mar 29, 2011·251 cites·7 claims
- 0298US8227787B2Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitrideKUMAR TANMAY·Filed 2011·Granted Jul 24, 2012·106 cites·16 claims
- 0398US7875871B2Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitrideSANDISK 3D LLC·Filed 2006·Granted Jan 25, 2011·120 cites·14 claims
- 0498US7566974B2Doped polysilicon via connecting polysilicon layersSANDISK 3D LLC·Filed 2004·Granted Jul 28, 2009·190 cites·17 claims
- 0598US7054219B1Transistor layout configuration for tight-pitched memory array linesMATRIX SEMICONDUCTOR INC·Filed 2005·Granted May 30, 2006·91 cites·28 claims
- 0697US7830698B2Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using sameSANDISK 3D LLC·Filed 2008·Granted Nov 9, 2010·74 cites·25 claims
- 0797US7812404B2Nonvolatile memory cell comprising a diode and a resistance-switching materialSANDISK 3D LLC·Filed 2006·Granted Oct 12, 2010·55 cites·116 claims
- 0896US9806256B1Resistive memory device having sidewall spacer electrode and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·23 cites·19 claims
- 0996US8658476B1Low temperature P+ polycrystalline silicon material for non-volatile memory deviceSUN XIN·Filed 2012·Granted Feb 25, 2014·69 cites·22 claims
- 1096US7660181B2Method of making non-volatile memory cell with embedded antifuseSANDISK 3D LLC·Filed 2007·Granted Feb 9, 2010·49 cites·6 claims
- 1195US9805794B1Enhanced erasing of two-terminal memoryCROSSBAR INC·Filed 2015·Granted Oct 31, 2017·21 cites·24 claims
- 1295US9768180B1Methods and apparatus for three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 19, 2017·16 cites·20 claims
- 1395US8946673B1Resistive switching device structure with improved data retention for non-volatile memory device and methodKUMAR TANMAY·Filed 2012·Granted Feb 3, 2015·25 cites·20 claims
- 1495US8062918B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2008·Granted Nov 22, 2011·23 cites·23 claims
- 1593US8569172B1Noble metal/non-noble metal electrode for RRAM applicationsJO SUNG HYUN·Filed 2012·Granted Oct 29, 2013·11 cites·21 claims
- 1692US10489700B1Neuromorphic logic for an array of high on/off ratio non-volatile memory cellsCROSSBAR INC·Filed 2015·Granted Nov 26, 2019·14 cites·20 claims
- 1792US8674724B2Field programmable gate array utilizing two-terminal non-volatile memoryNAZARIAN HAGOP·Filed 2011·Granted Mar 18, 2014·15 cites·20 claims
- 1892US7800933B2Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistanceSANDISK 3D LLC·Filed 2006·Granted Sep 21, 2010·19 cites·50 claims
- 1992US7553611B2Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structureSANDISK 3D LLC·Filed 2005·Granted Jun 30, 2009·21 cites·24 claims
- 2092US7495947B2Reverse bias trim operations in non-volatile memorySANDISK 3D LLC·Filed 2006·Granted Feb 24, 2009·27 cites·22 claims
- 2192US6306718B1Method of making polysilicon resistor having adjustable temperature coefficientsDALLAS SEMICONDUCTOR·Filed 2000·Granted Oct 23, 2001·82 cites·6 claims
- 2291US9735358B2Noble metal / non-noble metal electrode for RRAM applicationsCROSSBAR INC·Filed 2016·Granted Aug 15, 2017·6 cites·26 claims
- 2391US8754671B2Field programmable gate array utilizing two-terminal non-volatile memoryNAZARIAN HAGOP·Filed 2011·Granted Jun 17, 2014·13 cites·20 claims
- 2491US8465996B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2012·Granted Jun 18, 2013·9 cites·20 claims
- 2590US8971088B1Multi-level cell operation using zinc oxide switching material in non-volatile memory deviceJO SUNG HYUN·Filed 2012·Granted Mar 3, 2015·14 cites·19 claims
- 2690US8659929B2Amorphous silicon RRAM with non-linear device and operationKUMAR TANMAY·Filed 2011·Granted Feb 25, 2014·12 cites·22 claims
- 2790US8274066B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2011·Granted Sep 25, 2012·7 cites·12 claims
- 2889US10032908B1Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 24, 2018·7 cites·26 claims
- 2989US9472301B2Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the sameSANDISK 3D LLC·Filed 2015·Granted Oct 18, 2016·5 cites·16 claims
- 3089US9324942B1Resistive memory cell with solid state diodeCROSSBAR INC·Filed 2013·Granted Apr 26, 2016·7 cites·20 claims
- 3189US9191000B2Field programmable gate array utilizing two-terminal non-volatile memoryCROSSBAR INC·Filed 2014·Granted Nov 17, 2015·7 cites·20 claims
- 3289US7897453B2Dual insulating layer diode with asymmetric interface state and method of fabricationSANDISK 3D LLC·Filed 2008·Granted Mar 1, 2011·20 cites·39 claims
- 3388US8872151B2Surface treatment to improve resistive-switching characteristicsINTERMOLECULAR INC·Filed 2013·Granted Oct 28, 2014·5 cites·14 claims
- 3487US10109680B1Methods and apparatus for three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 23, 2018·6 cites·10 claims
- 3587US9613694B1Enhanced programming of two-terminal memoryCROSSBAR INC·Filed 2015·Granted Apr 4, 2017·9 cites·31 claims
- 3687US7800934B2Programming methods to increase window for reverse write 3D cellSANDISK 3D LLC·Filed 2007·Granted Sep 21, 2010·11 cites·21 claims
- 3787US7719874B2Systems for controlled pulse operations in non-volatile memorySANDISK 3D LLC·Filed 2006·Granted May 18, 2010·19 cites·33 claims
- 3886US7492630B2Systems for reverse bias trim operations in non-volatile memorySANDISK 3D LLC·Filed 2006·Granted Feb 17, 2009·17 cites·23 claims
- 3986US7447056B2Method for using a multi-use memory cell and memory arraySANDISK 3D LLC·Filed 2006·Granted Nov 4, 2008·15 cites·9 claims
- 4084US9336876B1Soak time programming for two-terminal memoryCROSSBAR INC·Filed 2014·Granted May 10, 2016·10 cites·21 claims
- 4184US7978496B2Method of programming a nonvolatile memory device containing a carbon storage materialSANDISK 3D LLC·Filed 2008·Granted Jul 12, 2011·8 cites·18 claims
- 4283US9373410B1MLC OTP operation in A-Si RRAMCROSSBAR INC·Filed 2014·Granted Jun 21, 2016·7 cites·20 claims
- 4382US8072791B2Method of making nonvolatile memory device containing carbon or nitrogen doped diodeHERNER S BRAD·Filed 2007·Granted Dec 6, 2011·7 cites·21 claims
- 4482US8023310B2Nonvolatile memory cell including carbon storage element formed on a silicide layerSANDISK 3D LLC·Filed 2009·Granted Sep 20, 2011·13 cites·26 claims
- 4582US7177227B2Transistor layout configuration for tight-pitched memory array linesSANDISK 3D LLC·Filed 2006·Granted Feb 13, 2007·8 cites·25 claims
- 4681US7944728B2Programming a memory cell with a diode in series by applying reverse biasSANDISK 3D LLC·Filed 2008·Granted May 17, 2011·13 cites·14 claims
- 4780US7969011B2MIIM diodes having stacked structureSANDISK 3D LLC·Filed 2008·Granted Jun 28, 2011·9 cites·26 claims
- 4880US7618850B2Method of making a diode read/write memory cell in a programmed stateSANDISK 3D LLC·Filed 2007·Granted Nov 17, 2009·7 cites·21 claims
- 4978US7816659B2Devices having reversible resistivity-switching metal oxide or nitride layer with added metalSANDISK 3D LLC·Filed 2005·Granted Oct 19, 2010·8 cites·35 claims
- 5077US9502102B1MLC OTP operation with diode behavior in ZnO RRAM devices for 3D memoryCROSSBAR INC·Filed 2014·Granted Nov 22, 2016·5 cites·22 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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