Inventor · disambiguated record
Ta-Kang Lo
Also filed as: LO TA-KANG
17 granted patents·5 pending applications·64 citations·filing 2009–2024
92Inventor score
Top patents by PatentIndex Score
22 records- 0190US9685520B1Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 20, 2017·11 cites·20 claims
- 0290US9634002B1Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 25, 2017·7 cites·7 claims
- 0389US8211775B1Method of making transistor having metal gateMa cheng-yu·Filed 2011·Granted Jul 3, 2012·13 cites·14 claims
- 0485US12278282B2High-electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Apr 15, 2025·1 cites·20 claims
- 0585US8390073B2Transistor structureHUNG WEN-HAN·Filed 2012·Granted Mar 5, 2013·6 cites·8 claims
- 0684US9960083B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 1, 2018·5 cites·10 claims
- 0781US8183640B2Method of fabricating transistors and a transistor structure for improving short channel effect and drain induced barrier loweringHUNG WEN-HAN·Filed 2009·Granted May 22, 2012·6 cites·9 claims
- 0878US8765561B2Method for fabricating semiconductor deviceHUNG WEN-HAN·Filed 2011·Granted Jul 1, 2014·4 cites·16 claims
- 0977US10276663B2Tunneling transistor and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 30, 2019·3 cites·7 claims
- 1077US9779998B2Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 3, 2017·2 cites·3 claims
- 1170US8486795B2Method of fabricating transistorsHUNG WEN-HAN·Filed 2012·Granted Jul 16, 2013·2 cites·15 claims
- 1269US10707305B2Method of fabricating tunneling transistorUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jul 7, 2020·1 cites·6 claims
- 1369US8404533B2Metal gate transistor and method for fabricating the sameMa cheng-yu·Filed 2010·Granted Mar 26, 2013·3 cites·15 claims
- 1462US12100756B2High electron mobility transistor device having a barrier layer with a protruding portionUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 24, 2024·0 cites·20 claims
- 1561US12283637B2MOS capacitor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Apr 22, 2025·0 cites·7 claims
- 1657US2025374578A1High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1755US2025151384A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1854US8823109B2Transistor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Sep 2, 2014·0 cites·10 claims
- 1954US2022181505A1Mos capacitor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 2036US2012086054A1Semiconductor structure and method for making the sameCHENG TZYY-MING·Filed 2010·Application pending·0 cites
- 2132US2012070948A1Adjusting method of channel stressCHENG TZYY-MING·Filed 2010·Application pending·0 cites
- 2230US10607891B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 31, 2020·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →