Inventor · disambiguated record
Takahiko Moriya
Also filed as: MORIYA TAKAHIKO
17 granted patents·1,257 citations·filing 1976–1995
96Inventor score
Top patents by PatentIndex Score
17 records- 0197US5637153AMethod of cleaning reaction tube and exhaustion piping system in heat processing apparatusTOKYO ELECTRON LTD·Filed 1995·Granted Jun 10, 1997·351 cites·16 claims
- 0296US5252133AVertically oriented CVD apparatus including gas inlet tube having gas injection holesTOSHIBA KK·Filed 1991·Granted Oct 12, 1993·313 cites·10 claims
- 0395US5015330AFilm forming method and film forming deviceTOSHIBA KK·Filed 1990·Granted May 14, 1991·141 cites·6 claims
- 0485US5380370AMethod of cleaning reaction tubeTOKYO ELECTRON LTD·Filed 1993·Granted Jan 10, 1995·56 cites·8 claims
- 0584US4582563AProcess for forming multi-layer interconnectionsTOSHIBA KK·Filed 1984·Granted Apr 15, 1986·60 cites·5 claims
- 0681US5234869AMethod of manufacturing silicon nitride filmTOSHIBA KK·Filed 1991·Granted Aug 10, 1993·72 cites·6 claims
- 0781US4377438AMethod for producing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Mar 22, 1983·51 cites·12 claims
- 0866US5048800AVertical heat treatment apparatusTOSHIBA KK·Filed 1990·Granted Sep 17, 1991·47 cites·6 claims
- 0964US5580615AMethod of forming a conductive film on an insulating region of a substrateTOSHIBA KK·Filed 1994·Granted Dec 3, 1996·33 cites·19 claims
- 1062US4283439AMethod of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrodeVLSI TECHNOLOGY RES ASS·Filed 1980·Granted Aug 11, 1981·23 cites·6 claims
- 1158US5223455AMethod of forming refractory metal filmTOSHIBA KK·Filed 1992·Granted Jun 29, 1993·26 cites·30 claims
- 1256US4650698AMethod of forming a thin film of a metal or metal compound on a substrateTOSHIBA KK·Filed 1985·Granted Mar 17, 1987·25 cites·8 claims
- 1351US4699801ASemiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1986·Granted Oct 13, 1987·17 cites·8 claims
- 1450US4063973AMethod of making a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Dec 20, 1977·14 cites·10 claims
- 1546US4746549AMethod for forming thin film of refractory materialTOSHIBA KK·Filed 1987·Granted May 24, 1988·13 cites·4 claims
- 1638US4597167AMethod of forming a metal film on a selectively diffused layerTOSHIBA KK·Filed 1984·Granted Jul 1, 1986·10 cites·4 claims
- 1737US4957880AMethod for producing semiconductor device including a refractory metal patternTOSHIBA KK·Filed 1989·Granted Sep 18, 1990·5 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →