Inventor · disambiguated record
Takuya Seino
Also filed as: SEINO TAKUYA
19 granted patents·11 pending applications·100 citations·filing 2005–2024
91Inventor score
Top patents by PatentIndex Score
30 records- 0196US10083830B2Substrate cleaning method for removing oxide filmCANON ANELVA CORP·Filed 2016·Granted Sep 25, 2018·67 cites·18 claims
- 0282US9905441B2Oxidation process apparatus, oxidation method, and method for manufacturing electronic deviceCANON ANELVA CORP·Filed 2015·Granted Feb 27, 2018·5 cites·24 claims
- 0381US9865805B2Method for manufacturing magnetoresistive elementCANON ANELVA CORP·Filed 2015·Granted Jan 9, 2018·5 cites·21 claims
- 0475US7898776B2Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layerTDK CORP·Filed 2007·Granted Mar 1, 2011·6 cites·9 claims
- 0573US8288234B2Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric filmSEINO TAKUYA·Filed 2010·Granted Oct 16, 2012·4 cites·21 claims
- 0669US7881024B2Tunnel-type magnetic detecting element and method of manufacturing the sameALPS ELECTRIC CO LTD·Filed 2007·Granted Feb 1, 2011·4 cites·5 claims
- 0767US8481382B2Method and apparatus for manufacturing semiconductor deviceCANON ANELVA CORP·Filed 2012·Granted Jul 9, 2013·2 cites·8 claims
- 0863US8835296B2Electronic component manufacturing method including step of embedding metal filmWAKAYANAGI SHUNICHI·Filed 2011·Granted Sep 16, 2014·3 cites·13 claims
- 0962US2025044704A1Substrate processing method, computer recording medium, substrate processing system, and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1060US11035034B2Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatusCANON ANELVA CORP·Filed 2017·Granted Jun 15, 2021·1 cites·6 claims
- 1160US7495868B2Exchange coupling film and magnetic sensing element including the sameALPS ELECTRIC CO LTD·Filed 2005·Granted Feb 24, 2009·3 cites·10 claims
- 1260US2025174462A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1354US2023051865A1Pvd apparatusTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1449US7807585B2Method of fabricating a semiconductor deviceCANON ANELVA CORP·Filed 2009·Granted Oct 5, 2010·0 cites·21 claims
- 1549US2007171579A1Tunnel type magnetic detection element in which crystal orientation of magnetic layer and barrier layer is selected and manufacturing method thereofALPS ELECTRIC CO LTD·Filed 2007·Application pending·0 cites
- 1647US12211692B2Wafer processing methodTOKYO ELECTRON LTD·Filed 2021·Granted Jan 28, 2025·0 cites·17 claims
- 1747US7369372B2Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron alloys having different compositions disposed on antiferromagnetic layer, and magnetic sensing elementALPS ELECTRIC CO LTD·Filed 2005·Granted May 6, 2008·0 cites·11 claims
- 1847US2009147409A1Magnetoresistive element, magnetic sensor, and method of producing the magnetoresistive elementALPS ELECTRIC CO LTD·Filed 2008·Application pending·0 cites
- 1946US9929340B2Method of manufacturing perpendicular MTJ deviceCANON ANELVA CORP·Filed 2017·Granted Mar 27, 2018·0 cites·3 claims
- 2046US2009298288A1Silicide forming method and system thereofCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 2146US2010221895A1Surface treatment apparatus and surface treatment methodCANON ANELVA CORP·Filed 2010·Application pending·0 cites
- 2246US2010255667A1Substrate cleaning method for removing oxide filmCANON ANELVA CORP·Filed 2010·Application pending·0 cites
- 2345US10361363B2Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatusCANON ANELVA CORP·Filed 2016·Granted Jul 23, 2019·0 cites·1 claims
- 2445US2007171580A1Tunnel type magnetic detection element in which fe composition of top/bottom surface of insulating barrier layer is adjusted and manufacturing method thereofALPS ELECTRIC CO LTD·Filed 2007·Application pending·0 cites
- 2543US2014353149A1Tunnel magneto-resistance element manufacturing apparatusCANON ANELVA CORP·Filed 2014·Application pending·0 cites
- 2642US10153426B2Manufacturing method of magnetoresistive effect elementCANON ANELVA CORP·Filed 2016·Granted Dec 11, 2018·0 cites·2 claims
- 2742US9437702B2Electronic component manufacturing method and electrode structureCANON ANELVA CORP·Filed 2014·Granted Sep 6, 2016·0 cites·16 claims
- 2842US8669624B2Semiconductor device and manufacturing method thereofKITANO NAOMU·Filed 2012·Granted Mar 11, 2014·0 cites·4 claims
- 2933US9853207B2Magnetoresistance effect elementCANON ANELVA CORP·Filed 2016·Granted Dec 26, 2017·0 cites·1 claims
- 3031US2012258582A1Method and apparatus for selectively growing doped epitaxial filmSEINO TAKUYA·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →