Inventor · disambiguated record
Takeshi Senda
Also filed as: SENDA TAKESHI
14 granted patents·7 pending applications·33 citations·filing 2004–2022
88Inventor score
Files withGLOBALWAFERS JAPAN CO LTD5SENDA TAKESHI5TOSHIBA CERAMICS CO5COVALENT MATERIALS CORP3HITACHI LTD1
Top patents by PatentIndex Score
21 records- 0186US12046469B2Manufacturing method for semiconductor silicon waferGLOBALWAFERS JAPAN CO LTD·Filed 2021·Granted Jul 23, 2024·2 cites·7 claims
- 0284US7250357B2Manufacturing method for strained silicon waferTOSHIBA CERAMICS CO·Filed 2005·Granted Jul 31, 2007·10 cites·7 claims
- 0375US7679730B2Surface inspection apparatus and surface inspection method for strained silicon waferSHIBAURA MECHATRONICS CORP·Filed 2006·Granted Mar 16, 2010·5 cites·8 claims
- 0469US7977219B2Manufacturing method for silicon waferCOVALENT MATERIALS CORP·Filed 2009·Granted Jul 12, 2011·3 cites·5 claims
- 0568US9421712B2Laser joining methodHITACHI LTD·Filed 2012·Granted Aug 23, 2016·1 cites·19 claims
- 0667US7247583B2Manufacturing method for strained silicon waferTOSHIBA CERAMICS CO·Filed 2005·Granted Jul 24, 2007·3 cites·6 claims
- 0763US8476149B2Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling processISOGAI HIROMICHI·Filed 2009·Granted Jul 2, 2013·3 cites·10 claims
- 0862US10141180B2Silicon wafer and method for manufacturing the sameGLOBALWAFERS JAPAN CO LTD·Filed 2014·Granted Nov 27, 2018·1 cites·3 claims
- 0954US7060597B2Manufacturing method for a silicon substrate having strained layerTOSHIBA CERAMICS CO·Filed 2004·Granted Jun 13, 2006·5 cites·12 claims
- 1051US2025051961A1Method of manufacturing silicon epitaxial substrate and silicon epitaxial substrateGLOBALWAFERS JAPAN CO LTD·Filed 2022·Application pending·0 cites
- 1146US2023073641A1Manufacturing method for semiconductor silicon waferGLOBALWAFERS JAPAN CO LTD·Filed 2021·Application pending·0 cites
- 1245US12308228B2Manufacturing method for semiconductor silicon waferGLOBALWAFERS JAPAN CO LTD·Filed 2021·Granted May 20, 2025·0 cites·7 claims
- 1344US2007068447A1Method of manufacturing silicon waferTOSHIBA CERAMICS CO·Filed 2006·Application pending·0 cites
- 1444US2008164572A1Semiconductor substrate and manufacturing method thereofCOVALENT MATERIALS CORP·Filed 2007·Application pending·0 cites
- 1544US2009004825A1Method of manufacturing semiconductor substrateCOVALENT MATERIALS CORP·Filed 2008·Application pending·0 cites
- 1644US2007240628A1Silicon waferTOSHIBA CERAMICS CO·Filed 2007·Application pending·0 cites
- 1741US9059099B2Thermal treatment method of silicon wafer and silicon waferSENDA TAKESHI·Filed 2012·Granted Jun 16, 2015·0 cites·8 claims
- 1841US8252700B2Method of heat treating silicon waferSENDA TAKESHI·Filed 2010·Granted Aug 28, 2012·0 cites·8 claims
- 1939US8999864B2Silicon wafer and method for heat-treating silicon waferSENDA TAKESHI·Filed 2010·Granted Apr 7, 2015·0 cites·4 claims
- 2037US2013078588A1Method for heat-treating silicon waferSENDA TAKESHI·Filed 2012·Application pending·0 cites
- 2134US8399341B2Method for heat treating a silicon waferSENDA TAKESHI·Filed 2010·Granted Mar 19, 2013·0 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Takeshi Senda files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →