Inventor · disambiguated record
Tatsuya Tominari
Also filed as: TOMINARI TATSUYA
6 granted patents·9 pending applications·44 citations·filing 2003–2025
78Inventor score
Files withTEXAS INSTRUMENTS INC11HITACHI INT ELECTRIC INC2HITACHI ULSI SYTEMS CO LTD1YOSHIDA YOSHINORI1
Top patents by PatentIndex Score
15 records- 0189US9905638B1Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trenchTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 27, 2018·6 cites·20 claims
- 0278US8415762B2Semiconductor device for performing photoelectric conversionYOSHIDA YOSHINORI·Filed 2007·Granted Apr 9, 2013·9 cites·13 claims
- 0377US2025338578A1Device having multiple emitter layersTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 0474US2025063756A1P type gallium nitride conformal epitaxial structure over thick buffer layerTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0572US6933201B2Method for manufacturing semiconductor deviceHITACHI ULSI SYTEMS CO LTD·Filed 2003·Granted Aug 23, 2005·29 cites·23 claims
- 0670US2024405106A1Dopant profile control in heterojunction bipolar transistor (hbt)TEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0765US12382684B2Device having multiple emitter layersTEXAS INSTRUMENTS INC·Filed 2021·Granted Aug 5, 2025·0 cites·24 claims
- 0864US12068402B2Dopant profile control in heterojunction bipolar transistor (HBT)TEXAS INSTRUMENTS INC·Filed 2021·Granted Aug 20, 2024·0 cites·19 claims
- 0960US12170328B2P type gallium nitride conformal epitaxial structure over thick buffer layerTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 17, 2024·0 cites·17 claims
- 1057US2025218777A1Suppression of dopant hydride evolution from epitaxial films in integrated circuit (ic) manufacturingTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1153US2025142851A1Method to suppress base poly linkup overgrowth into the emitter cavity during silicon germanium selective epitaxy growthTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1251US2024347605A1Auto-doping reduction in semiconductor structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1350US2025220936A1Integrated circuit (ic) with dopant profile control in a heterojunction bipolar transistor (hbt)TEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 1442US2016126337A1Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing methodHITACHI INT ELECTRIC INC·Filed 2014·Application pending·0 cites
- 1540US2013344689A1Method for processing substrate, method for manufacturing semiconductor device, and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →