Inventor · disambiguated record
Takaaki Tsunomura
Also filed as: TSUNOMURA TAKAAKI
27 granted patents·5 pending applications·50 citations·filing 2002–2024
95Inventor score
Files withRENESAS ELECTRONICS CORP23TOKYO ELECTRON LTD4RENESAS TECH CORP2ISHIBASHI MASATO1TSUNOMURA TAKAAKI1
Top patents by PatentIndex Score
32 records- 0194US9196705B2Method of manufacturing a misfet on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 24, 2015·10 cites·7 claims
- 0294US8941178B2MOS field-effect transistor formed on the SOI substrateRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 27, 2015·9 cites·3 claims
- 0393US9484433B2Method of manufacturing a MISFET on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·5 cites·9 claims
- 0491US12261205B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Granted Mar 25, 2025·0 cites·15 claims
- 0590US9263346B2Semiconductor device with silicon layer containing carbonRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 16, 2016·7 cites·4 claims
- 0688US9935125B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 3, 2018·6 cites·10 claims
- 0788US2024395823A1Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0886US11996448B2Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layerRENESAS ELECTRONICS CORP·Filed 2023·Granted May 28, 2024·0 cites·15 claims
- 0985US9130039B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 8, 2015·5 cites·2 claims
- 1083US12080716B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2023·Granted Sep 3, 2024·0 cites·12 claims
- 1182US10461158B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2018·Granted Oct 29, 2019·1 cites·10 claims
- 1281US9722044B2Manufacturing method of semiconductor device with silicon layer containing carbonRENESAS ELECTRONICS CORP·Filed 2016·Granted Aug 1, 2017·2 cites·6 claims
- 1380US10410858B2Selective film deposition using halogen deactivationTOKYO ELECTRON LTD·Filed 2018·Granted Sep 10, 2019·2 cites·20 claims
- 1478US11658211B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted May 23, 2023·0 cites·21 claims
- 1573US11695012B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2020·Granted Jul 4, 2023·0 cites·31 claims
- 1672US10991881B2Method for controlling the forming voltage in resistive random access memory devicesTOKYO ELECTRON LTD·Filed 2019·Granted Apr 27, 2021·2 cites·17 claims
- 1771US11700778B2Method for controlling the forming voltage in resistive random access memory devicesTOKYO ELECTRON LTD·Filed 2021·Granted Jul 11, 2023·0 cites·20 claims
- 1871US2020013857A1Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 1967US10756115B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2019·Granted Aug 25, 2020·0 cites·19 claims
- 2067US10263078B2Method of manufacturing a MISFET on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2018·Granted Apr 16, 2019·0 cites·10 claims
- 2165US9978839B2Method of manufacturing a MOSFET on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2017·Granted May 22, 2018·0 cites·7 claims
- 2264US9773872B2Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitanceRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 26, 2017·0 cites·4 claims
- 2360US10510775B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 2458US10411112B2Semiconductor device with silicon layer containing carbonRENESAS ELECTRONICS CORP·Filed 2017·Granted Sep 10, 2019·0 cites·12 claims
- 2550US9460936B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Oct 4, 2016·0 cites·9 claims
- 2648US9484456B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·0 cites·7 claims
- 2748US9293347B2Semiconductor device and method of manufacturing the sameYAMAMOTO YOSHIKI·Filed 2012·Granted Mar 22, 2016·0 cites·12 claims
- 2842US6713805B2Semiconductor memory device with increased capacitanceRENESAS TECH CORP·Filed 2002·Granted Mar 30, 2004·1 cites·10 claims
- 2940US8592284B2Semiconductor device and manufacturing method thereofISHIBASHI MASATO·Filed 2009·Granted Nov 26, 2013·0 cites·6 claims
- 3038US2006270186A1Semiconductor device having plural bird's beaks of different sizes and manufacturing method thereofTSUNOMURA TAKAAKI·Filed 2005·Application pending·0 cites
- 3135US2004108534A1Semiconductor device and manufacturing method for the sameRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 3235US2015194441A1Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →