Inventor · disambiguated record
Thomas D. Bonifield
Also filed as: BONIFIELD THOMAS · BONIFIELD THOMAS D · BONIFIELD THOMAS DYER
80 granted patents·20 pending applications·862 citations·filing 1983–2025
99Inventor score
Top patents by PatentIndex Score
100 records- 0198US9299697B2High breakdown voltage microelectronic device isolation structure with improved reliabilityTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 29, 2016·50 cites·9 claims
- 0297US9583558B2High breakdown voltage microelectronic device isolation structure with improved reliabilityTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 28, 2017·17 cites·20 claims
- 0396US11784212B2Standalone high voltage galvanic isolation capacitorsTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 10, 2023·4 cites·24 claims
- 0495US10147784B2High voltage galvanic isolation deviceTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 4, 2018·11 cites·20 claims
- 0595US8890223B1High voltage hybrid polymeric-ceramic dielectric capacitorTEXAS INSTRUMENTS INC·Filed 2013·Granted Nov 18, 2014·45 cites·12 claims
- 0695US7211516B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted May 1, 2007·34 cites·16 claims
- 0795US4512283APlasma reactor sidewall shieldTEXAS INSTRUMENTS INC·Filed 1983·Granted Apr 23, 1985·92 cites·24 claims
- 0894US11024576B1Semiconductor package with underfill between a sensor coil and a semiconductor dieTEXAS INSTRUMENTS INC·Filed 2019·Granted Jun 1, 2021·11 cites·29 claims
- 0994US10366958B2Wire bonding between isolation capacitors for multichip modulesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 30, 2019·10 cites·20 claims
- 1093US9768245B2High breakdown voltage microelectronic device isolation structure with improved reliabilityTEXAS INSTRUMENTS INC·Filed 2016·Granted Sep 19, 2017·8 cites·20 claims
- 1193US7833895B2TSVS having chemically exposed TSV tips for integrated circuit devicesTEXAS INSTRUMENTS INC·Filed 2009·Granted Nov 16, 2010·24 cites·8 claims
- 1293US7511350B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 31, 2009·20 cites·5 claims
- 1393US7344985B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 18, 2008·21 cites·14 claims
- 1492US10186576B2Device isolator with reduced parasitic capacitanceTEXAS INSTRUMENTS INC·Filed 2017·Granted Jan 22, 2019·6 cites·16 claims
- 1592US7355255B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 8, 2008·17 cites·6 claims
- 1691US9893008B2High voltage polymer dielectric capacitor isolation deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 13, 2018·8 cites·12 claims
- 1790US9525021B2Methods and apparatus for high voltage integrated circuit capacitorsTEXAS INSTRUMENTS INC·Filed 2015·Granted Dec 20, 2016·6 cites·18 claims
- 1890US8178976B2IC device having low resistance TSV comprising ground connectionDUNNE RAJIV·Filed 2009·Granted May 15, 2012·18 cites·14 claims
- 1990US7960840B2Double wafer carrier process for creating integrated circuit die with through-silicon vias and micro-electro-mechanical systems protected by a hermetic cavity created at the wafer levelTEXAS INSTRUMENTS INC·Filed 2009·Granted Jun 14, 2011·26 cites·19 claims
- 2090US5055423APlanarized selective tungsten metallization systemTEXAS INSTRUMENTS INC·Filed 1989·Granted Oct 8, 1991·80 cites·12 claims
- 2189US8043973B2Mask overhang reduction or elimination after substrate etchTEXAS INSTRUMENTS INC·Filed 2009·Granted Oct 25, 2011·14 cites·7 claims
- 2289US4513021APlasma reactor with reduced chamber wall depositionTEXAS INSTRUMENTS INC·Filed 1983·Granted Apr 23, 1985·54 cites·6 claims
- 2387US9741787B2Methods and apparatus for high voltage integrated circuit capacitorsTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 22, 2017·4 cites·11 claims
- 2485US9806148B2Device isolator with reduced parasitic capacitanceTEXAS INSTRUMENTS INC·Filed 2015·Granted Oct 31, 2017·3 cites·16 claims
- 2585US4891087AIsolation substrate ring for plasma reactorTEXAS INSTRUMENTS INC·Filed 1987·Granted Jan 2, 1990·39 cites·11 claims
- 2683US8912076B2Crack deflector structure for improving semiconductor device robustness against saw-induced damageWEST JEFFREY ALAN·Filed 2009·Granted Dec 16, 2014·11 cites·12 claims
- 2782US12355025B2Standalone isolation capacitorTEXAS INSTRUMENTS INC·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2882US8154134B2Packaged electronic devices with face-up die having TSV connection to leads and die padBONIFIELD THOMAS D·Filed 2009·Granted Apr 10, 2012·15 cites·14 claims
- 2981US10345397B2Highly sensitive, low power fluxgate magnetic sensor integrated onto semiconductor process technologiesTEXAS INSTRUMENTS INC·Filed 2016·Granted Jul 9, 2019·2 cites·29 claims
- 3080US2025079340A1Through wafer trench isolation between transistors in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3180US2025294783A1Standalone isolation capacitorTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 3279US12230669B2Standalone high voltage galvanic isolation capacitorsTEXAS INSTRUMENTS INC·Filed 2023·Granted Feb 18, 2025·0 cites·18 claims
- 3379US8431481B2IC device having low resistance TSV comprising ground connectionDUNNE RAJIV·Filed 2012·Granted Apr 30, 2013·4 cites·11 claims
- 3478US11107883B2Device isolator with reduced parasitic capacitanceTEXAS INSTRUMENTS INC·Filed 2018·Granted Aug 31, 2021·1 cites·20 claims
- 3576US5444018AMetallization process for a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1993·Granted Aug 22, 1995·56 cites·5 claims
- 3675US11869933B2Device isolator with reduced parasitic capacitanceTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 3775US2024274529A1Resonant inductive-capacitive isolated data channelTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3874US12033936B2Resonant inductive-capacitive isolated data channelTEXAS INSTRUMENTS INC·Filed 2022·Granted Jul 9, 2024·0 cites·16 claims
- 3974US11961879B2IC including capacitor having segmented bottom plateTEXAS INSTRUMENTS INC·Filed 2023·Granted Apr 16, 2024·0 cites·20 claims
- 4074US10707297B2High voltage galvanic isolation deviceTEXAS INSTRUMENTS INC·Filed 2018·Granted Jul 7, 2020·1 cites·21 claims
- 4174US2025194119A1Standalone high voltage galvanic isolation capacitorsTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 4273US12489088B2IC package with multiple diesTEXAS INSTRUMENTS INC·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 4373US12148717B2Through wafer trench isolation between transistors in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2022·Granted Nov 19, 2024·0 cites·16 claims
- 4473US4654112AOxide etchTEXAS INSTRUMENTS INC·Filed 1984·Granted Mar 31, 1987·33 cites·10 claims
- 4572US11495553B2Wire bonding between isolation capacitors for multichip modulesTEXAS INSTRUMENTS INC·Filed 2019·Granted Nov 8, 2022·1 cites·22 claims
- 4672US10580722B1High voltage flip-chip on lead (FOL) packageTEXAS INSTRUMENTS INC·Filed 2018·Granted Mar 3, 2020·1 cites·20 claims
- 4772US2025267883A1Isolation device with safety fuseTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 4871US11901402B2Standalone isolation capacitorTEXAS INSTRUMENTS INC·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
- 4970US11942402B2Laminate stacked on die for high voltage isolation capacitorTEXAS INSTRUMENTS INC·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 5069US7402514B2Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layerTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 22, 2008·17 cites·14 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →