Inventor · disambiguated record
Thomas Feudel
Also filed as: FEUDEL THOMAS
30 granted patents·6 pending applications·217 citations·filing 2001–2012
96Inventor score
Files withADVANCED MICRO DEVICES INC22FEUDEL THOMAS2GLOBALFOUNDRIES INC2HOENTSCHEL JAN2PRESS PATRICK2
Top patents by PatentIndex Score
36 records- 0193US7208397B2Transistor having an asymmetric source/drain and halo implantation region and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 24, 2007·23 cites·19 claims
- 0292US7754556B2Reducing transistor junction capacitance by recessing drain and source regionsADVANCED MICRO DEVICES INC·Filed 2008·Granted Jul 13, 2010·18 cites·19 claims
- 0385US7964970B2Technique for enhancing transistor performance by transistor specific contact designGLOBALFOUNDRIES INC·Filed 2007·Granted Jun 21, 2011·11 cites·17 claims
- 0485US7799682B2Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistorGLOBALFOUNDRIES INC·Filed 2007·Granted Sep 21, 2010·12 cites·13 claims
- 0579US8143133B2Technique for enhancing dopant profile and channel conductivity by millisecond anneal processesHOENTSCHEL JAN·Filed 2009·Granted Mar 27, 2012·5 cites·23 claims
- 0678US8338885B2Technique for enhancing dopant profile and channel conductivity by millisecond anneal processesHOENTSCHEL JAN·Filed 2012·Granted Dec 25, 2012·3 cites·14 claims
- 0776US7955937B2Method for manufacturing semiconductor device comprising SOI transistors and bulk transistorsADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 7, 2011·7 cites·7 claims
- 0873US7745334B2Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniquesADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 29, 2010·4 cites·17 claims
- 0973US6821887B2Method of forming a metal silicide gate in a standard MOS process sequenceADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·18 cites·45 claims
- 1073US6593175B2Method of controlling a shape of an oxide layer formed on a substrateADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 15, 2003·16 cites·26 claims
- 1172US8541885B2Technique for enhancing transistor performance by transistor specific contact designGERHARDT MARTIN·Filed 2011·Granted Sep 24, 2013·3 cites·8 claims
- 1271US6846708B2Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 25, 2005·13 cites·28 claims
- 1371US6808970B2Semiconductor device having an improved strained surface layer and method of forming a strained surface layer in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 26, 2004·13 cites·16 claims
- 1470US7419867B2CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structureADVANCED MICRO DEVICES INC·Filed 2005·Granted Sep 2, 2008·4 cites·24 claims
- 1567US6897114B2Methods of forming a transistor having a recessed gate electrode structureADVANCED MICRO DEVICES INC·Filed 2003·Granted May 24, 2005·13 cites·66 claims
- 1667US6849516B2Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·11 cites·28 claims
- 1767US6821840B2Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit areaADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·13 cites·10 claims
- 1862US8586440B2Methods for fabricating integrated circuits using non-oxidizing resist removalFLACHOWSKY STEFAN·Filed 2011·Granted Nov 19, 2013·1 cites·18 claims
- 1962US6410410B1Method of forming lightly doped regions in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 25, 2002·8 cites·11 claims
- 2057US6924216B2Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 2, 2005·5 cites·55 claims
- 2157US6806153B2Method of manufacturing a field effect transistorADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 19, 2004·5 cites·55 claims
- 2253US6822430B2Method of assessing lateral dopant and/or charge carrier profilesADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·3 cites·36 claims
- 2348US6905924B2Diode structure for SOI circuitsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 14, 2005·3 cites·46 claims
- 2447US7816199B2Method of forming a semiconductor structure comprising an implantation of ions of a non-doping elementADVANCED MICRO DEVICES INC·Filed 2008·Granted Oct 19, 2010·0 cites·20 claims
- 2547US7494872B2Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistorADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 24, 2009·3 cites·27 claims
- 2646US7338872B2Method of depositing a layer of a material on a substrateADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 4, 2008·2 cites·11 claims
- 2746US2008268597A1Technique for enhancing dopant activation by using multiple sequential advanced laser/flash anneal processesWEI ANDY·Filed 2007·Application pending·0 cites
- 2845US2008299733A1Method of forming a semiconductor structure comprising an implantation of ions in a material layer to be etchedPRESS PATRICK·Filed 2008·Application pending·0 cites
- 2944US8183605B2Reducing transistor junction capacitance by recessing drain and source regionsFEUDEL THOMAS·Filed 2010·Granted May 22, 2012·0 cites·24 claims
- 3042US8623742B2Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devicesKRONHOLZ STEPHAN·Filed 2011·Granted Jan 7, 2014·0 cites·11 claims
- 3142US8288256B2Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal processFEUDEL THOMAS·Filed 2008·Granted Oct 16, 2012·0 cites·17 claims
- 3242US2007281472A1Method of increasing transistor performance by dopant activation after silicidationPRESS PATRICK·Filed 2007·Application pending·0 cites
- 3340US2005098818A1Drain/source extension structure of a field effect transistor including doped high-k sidewall spacersADVANCED MICRO DEVICES INC·Filed 2004·Application pending·0 cites
- 3440US2005048679A1Technique for adjusting a penetration depth during the implantation of ions into a semiconductor regionFiled 2004·Application pending·0 cites
- 3539US7625802B2Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 1, 2009·0 cites·9 claims
- 3638US2007232033A1Method for forming ultra-shallow high quality junctions by a combination of solid phase epitaxy and laser annealingWIECZOREK KARSTEN·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →