Inventor · disambiguated record
Thomas Rohr
Also filed as: ROEHR THOMAS · ROHR THOMAS · ROHR THOMAS C
29 granted patents·3 pending applications·182 citations·filing 1999–2006
96Inventor score
Top patents by PatentIndex Score
32 records- 0190US7233515B2Integrated memory arrangement based on resistive memory cells and production methodINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jun 19, 2007·20 cites·27 claims
- 0283US6468896B2Method of fabricating semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 22, 2002·29 cites·11 claims
- 0381US7423281B2Microelectronic device with a plurality of storage elements in serial connection and method of producing the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 9, 2008·10 cites·17 claims
- 0476US6452852B2Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 17, 2002·24 cites·7 claims
- 0574US6351422B2Integrated memory having a differential sense amplifierINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 26, 2002·21 cites·6 claims
- 0668US6664158B2Ferroelectric memory configuration and a method for producing the configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 16, 2003·11 cites·3 claims
- 0760US7254073B2Memory device having an array of resistive memory cellsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 7, 2007·4 cites·26 claims
- 0860US6392918B2Circuit configuration for generating a reference voltage for reading a ferroelectric memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 21, 2002·11 cites·3 claims
- 0958US6483768B2Current driver configuration for MRAMINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 19, 2002·10 cites·6 claims
- 1054US6259641B1Integrated memory having sense amplifiers disposed on opposite sides of a cell arrayINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 10, 2001·9 cites·5 claims
- 1151US6906370B1Semiconductor component having a material reinforced contact areaINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jun 14, 2005·5 cites·8 claims
- 1247US6487128B2Integrated memory having memory cells and reference cells, and operating method for such a memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 26, 2002·5 cites·10 claims
- 1342US6803618B2MRAM configuration having selection transistors with a large channel widthINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 12, 2004·3 cites·6 claims
- 1442US6480055B2Decoder element for generating an output signal having three different potentials and an operating method for the decoder elementINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 12, 2002·3 cites·5 claims
- 1542US6459626B1Integrated memory having memory cells and reference cells, and corresponding operating methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 1, 2002·3 cites·5 claims
- 1641US6137712AFerroelectric memory configurationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Oct 24, 2000·7 cites·5 claims
- 1740US6538950B2Integrated memory and corresponding operating methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·2 cites·3 claims
- 1839US7158405B2Semiconductor memory device having a plurality of memory areas with memory elementsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 2, 2007·2 cites·22 claims
- 1938US7564432B1Method and apparatus for extending the life of matrix addressed emissive display devicesROCKWELL COLLINS INC·Filed 2000·Granted Jul 21, 2009·1 cites·11 claims
- 2036US6525974B2Integrated memory with redundancyINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 25, 2003·1 cites·9 claims
- 2135US6445607B2Method for operating an integrated memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 3, 2002·1 cites·3 claims
- 2234US2007091667A1Memory circuit as well as method for evaluating a memory datum of a CBRAM resistance memory cellQIMONDA AG·Filed 2006·Application pending·0 cites
- 2333US6826075B2Random access semiconductor memory with reduced signal overcouplingINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 30, 2004·0 cites·17 claims
- 2433US6711047B2Test circuit for an analog measurement of bit line signals of ferroelectric memory cellsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 23, 2004·0 cites·20 claims
- 2533US6645809B2Process for producing a capacitor configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 11, 2003·0 cites·15 claims
- 2633US2006139989A1Integration of 1T1R CBRAM memory cellsINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 2732US6538913B2Method for operating a ferroelectric memory configuration and a ferroelectric memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·0 cites·7 claims
- 2832US6442100B2Integrated memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·0 cites·4 claims
- 2932US6392445B2Decoder element for producing an output signal having three different potentialsINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 21, 2002·0 cites·9 claims
- 3031US6515890B2Integrated semiconductor memory having memory cells with a ferroelectric memory propertyINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 4, 2003·0 cites·5 claims
- 3130US6255855B1Integrated circuit having a decoderINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 3, 2001·0 cites·11 claims
- 3230US2001024396A1Integrated memory having a bit line reference voltage, and a method for producing the bit line reference voltageFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →