Inventor · disambiguated record
Thilo Scheiper
Also filed as: SCHEIPER THILO
72 granted patents·23 pending applications·382 citations·filing 2009–2020
99Inventor score
Top patents by PatentIndex Score
95 records- 0196US8936977B2Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsHOENTSCHEL JAN·Filed 2012·Granted Jan 20, 2015·21 cites·14 claims
- 0296US8722498B2Self-aligned fin transistor formed on a bulk substrate by late fin etchSCHEIPER THILO·Filed 2011·Granted May 13, 2014·28 cites·20 claims
- 0396US8703578B2Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsHOENTSCHEL JAN·Filed 2012·Granted Apr 22, 2014·22 cites·15 claims
- 0495US8975704B2Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantationsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Mar 10, 2015·18 cites·20 claims
- 0595US8114746B2Method for forming double gate and tri-gate transistors on a bulk substrateWEI ANDY·Filed 2009·Granted Feb 14, 2012·38 cites·28 claims
- 0694US8357604B2Work function adjustment in high-k gate stacks for devices of different threshold voltageGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 22, 2013·19 cites·17 claims
- 0793US8241977B2Short channel transistor with reduced length variation by using amorphous electrode material during implantationSCHEIPER THILO·Filed 2010·Granted Aug 14, 2012·12 cites·19 claims
- 0892US8574981B2Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising sameFLACHOWSKY STEFAN·Filed 2011·Granted Nov 5, 2013·13 cites·18 claims
- 0992US7943462B1Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacerGLOBALFOUNDRIES INC·Filed 2010·Granted May 17, 2011·14 cites·20 claims
- 1091US8598007B1Methods of performing highly tilted halo implantation processes on semiconductor devicesFLACHOWSKY STEFAN·Filed 2012·Granted Dec 3, 2013·11 cites·23 claims
- 1191US8409942B2Replacement gate approach based on a reverse offset spacer applied prior to work function metal depositionSCHEIPER THILO·Filed 2010·Granted Apr 2, 2013·13 cites·20 claims
- 1290US8722500B2Methods for fabricating integrated circuits having gate to active and gate to gate interconnectsSCHEIPER THILO·Filed 2011·Granted May 13, 2014·10 cites·9 claims
- 1389US8524563B2Semiconductor device with strain-inducing regions and method thereofFLACHOWSKY STEFAN·Filed 2012·Granted Sep 3, 2013·8 cites·12 claims
- 1488US8198152B2Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materialsBEYER SVEN·Filed 2010·Granted Jun 12, 2012·10 cites·14 claims
- 1586US8809151B2Transistor comprising an embedded sigma shaped sequentially formed semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 19, 2014·8 cites·17 claims
- 1685US8232188B2High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2010·Granted Jul 31, 2012·8 cites·9 claims
- 1784US8669151B2High-K metal gate electrode structures formed at different process stages of a semiconductor deviceHOENTSCHEL JAN·Filed 2010·Granted Mar 11, 2014·6 cites·17 claims
- 1884US8501601B2Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 6, 2013·6 cites·15 claims
- 1984US8426266B2Stress memorization with reduced fringing capacitance based on silicon nitride in MOS semiconductor devicesHOENTSCHEL JAN·Filed 2010·Granted Apr 23, 2013·6 cites·18 claims
- 2084US8404550B2Performance enhancement in PFET transistors comprising high-k metal gate stack by increasing dopant confinementSCHEIPER THILO·Filed 2010·Granted Mar 26, 2013·7 cites·16 claims
- 2183US8536034B2Methods of forming stressed silicon-carbon areas in an NMOS transistorFLACHOWSKY STEFAN·Filed 2011·Granted Sep 17, 2013·5 cites·20 claims
- 2282US8679924B2Self-aligned multiple gate transistor formed on a bulk substrateWEI ANDY·Filed 2011·Granted Mar 25, 2014·7 cites·14 claims
- 2382US8455314B2Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stageGRIEBENOW UWE·Filed 2011·Granted Jun 4, 2013·5 cites·16 claims
- 2482US8329531B2Strain memorization in strained SOI substrates of semiconductor devicesHOENTSCHEL JAN·Filed 2010·Granted Dec 11, 2012·6 cites·14 claims
- 2581US9184095B2Contact bars with reduced fringing capacitance in a semiconductor deviceSCHEIPER THILO·Filed 2010·Granted Nov 10, 2015·6 cites·20 claims
- 2681US8349695B2Work function adjustment in high-k gate stacks including gate dielectrics of different thicknessGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 8, 2013·6 cites·19 claims
- 2780US9048336B2Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structuresSCHEIPER THILO·Filed 2011·Granted Jun 2, 2015·4 cites·9 claims
- 2879US8916433B2Superior integrity of high-k metal gate stacks by capping STI regionsSCHEIPER THILO·Filed 2012·Granted Dec 23, 2014·5 cites·22 claims
- 2979US8698243B2Semiconductor device with strain-inducing regions and method thereofFLACHOWSKY STEFAN·Filed 2013·Granted Apr 15, 2014·3 cites·6 claims
- 3079US8524564B2Full silicidation prevention via dual nickel deposition approachJAVORKA PETER·Filed 2011·Granted Sep 3, 2013·4 cites·14 claims
- 3178US8748281B2Enhanced confinement of sensitive materials of a high-K metal gate electrode structureHOENTSCHEL JAN·Filed 2010·Granted Jun 10, 2014·5 cites·1 claims
- 3277US9425052B2Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·2 cites·16 claims
- 3377US8759922B2Full silicidation prevention via dual nickel deposition approachGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 24, 2014·3 cites·20 claims
- 3476US8652956B2High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2012·Granted Feb 18, 2014·4 cites·16 claims
- 3572US8872285B2Metal gate structure for semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 28, 2014·3 cites·2 claims
- 3672US8039342B2Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removalGLOBALFOUNDRIES INC·Filed 2010·Granted Oct 18, 2011·3 cites·21 claims
- 3771US8664072B2Source and drain architecture in an active region of a P-channel transistor by tilted implantationSCHEIPER THILO·Filed 2012·Granted Mar 4, 2014·2 cites·19 claims
- 3871US8536036B2Predoped semiconductor material for a high-K metal gate electrode structure of P- and N-channel transistorsBEYER SVEN·Filed 2010·Granted Sep 17, 2013·3 cites·20 claims
- 3970US9023696B2Method of forming contacts for devices with multiple stress linersBAARS PETER·Filed 2011·Granted May 5, 2015·3 cites·20 claims
- 4070US8318564B2Performance enhancement in transistors comprising high-k metal gate stack by an early extension implantationSCHEIPER THILO·Filed 2010·Granted Nov 27, 2012·2 cites·17 claims
- 4169US8679921B2Canyon gate transistor and methods for its fabricationFLACHOWSKY STEFAN·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 4269US8026134B2Recessed drain and source areas in combination with advanced silicide formation in transistorsADVANCED MICRO DEVICES INC·Filed 2009·Granted Sep 27, 2011·2 cites·18 claims
- 4368US8871586B2Methods of reducing material loss in isolation structures by introducing inert atoms into oxide hard mask layer used in growing channel semiconductor materialGLOBALFOUNDRIES INC·Filed 2012·Granted Oct 28, 2014·2 cites·35 claims
- 4468US8790973B2Workfunction metal stacks for a final metal gateSCHEIPER THILO·Filed 2012·Granted Jul 29, 2014·2 cites·15 claims
- 4568US8558290B2Semiconductor device with dual metal silicide regions and methods of making sameSCHEIPER THILO·Filed 2011·Granted Oct 15, 2013·2 cites·20 claims
- 4667US8377773B1Transistors having a channel semiconductor alloy formed in an early process stage based on a hard maskGLOBALFOUNDRIES INC·Filed 2011·Granted Feb 19, 2013·2 cites·20 claims
- 4766US8709902B2Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structureSCHEIPER THILO·Filed 2011·Granted Apr 29, 2014·2 cites·24 claims
- 4866US8481374B2Semiconductor element comprising a low variation substrate diodeSCHEIPER THILO·Filed 2010·Granted Jul 9, 2013·2 cites·17 claims
- 4964US8786027B2Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stageGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 22, 2014·1 cites·20 claims
- 5064US8673728B2Complementary stress liner to improve DGO/AVT devices and poly and diffusion resistorsGLOBALFOUNDRIES INC·Filed 2012·Granted Mar 18, 2014·1 cites·9 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →