Inventor · disambiguated record

Ting-Yeh Chen

Also filed as: CHEN TING-YEH

32 granted patents·9 pending applications·130 citations·filing 2014–2025

96Inventor score

Technology areasH10D H10P H10W H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD41

Top patents by PatentIndex Score

41 records

0198US9570556B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·27 cites·20 claims
0297US9287403B1FinFET and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·44 cites·19 claims
0396US9748389B1Method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·12 cites·20 claims
0494US12087837B2Semiconductor device with backside contact and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·2 cites·20 claims
0594US9129988B1FinFET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 8, 2015·17 cites·20 claims
0693US9812576B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·8 cites·20 claims
0790US9865504B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·5 cites·20 claims
0884US12369334B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
0983US9343575B1FinFET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 17, 2016·3 cites·19 claims
1083US2025318156A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1182US2025366063A1Methods of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1282US2025366032A1Semiconductor device with epitaxial bridge feature and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1381US11996467B2Method for epitaxial growth and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
1481US11107734B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 31, 2021·2 cites·20 claims
1580US12507446B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
1680US10158007B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
1779US9741831B2FinFET and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 22, 2017·2 cites·15 claims
1879US2024395866A1Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1978US2025318215A1Isolation structures in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2077US11289574B2Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·1 cites·20 claims
2177US11257928B2Method for epitaxial growth and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·1 cites·20 claims
2276US10872889B2Semiconductor component and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 22, 2020·2 cites·20 claims
2376US2024379862A1Semiconductor device structure with embedded epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2475US11688794B2Method for epitaxial growth and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
2575US10158017B2Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·1 cites·20 claims
2674US11710792B2Semiconductor structure with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
2774US2025022931A1Source/Drain Contact with Low-K Contact Etch Stop Layer and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2874US2024363715A1Semiconductor device with backside contact and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2973US12002845B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
3072US12154947B2Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
3172US11031498B2Semiconductor structure with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
3272US11011634B2Elongated source/drain region structure in finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 18, 2021·1 cites·20 claims
3370US11735660B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
3469US12464769B2Semiconductor device with epitaxial bridge feature and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
3567US12396220B2Isolation structures in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
3667US12125889B2Source/drain contact with low-k contact etch stop layer and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
3764US12382660B2Structure and formation method of semiconductor device with embedded epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 5, 2025·0 cites·20 claims
3864US10629736B2Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
3961US2020027793A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Application pending·0 cites
4056US11855167B2Structure and formation method of semiconductor device with nanosheet structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
4153US11855225B2Semiconductor device with epitaxial bridge feature and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →