Inventor · disambiguated record
Timothy J. Mcardle
Also filed as: MCARDLE TIMOTHY · MCARDLE TIMOTHY J · MCARDLE TIMOTHY JAMES
37 granted patents·8 pending applications·196 citations·filing 1994–2018
97Inventor score
Top patents by PatentIndex Score
45 records- 0196US9812453B1Self-aligned sacrificial epitaxial capping for trench silicideGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 7, 2017·22 cites·14 claims
- 0296US8354296B2Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming sameIBM·Filed 2011·Granted Jan 15, 2013·27 cites·10 claims
- 0394US9287264B1Epitaxially grown silicon germanium channel FinFET with silicon underlayerGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 15, 2016·15 cites·12 claims
- 0493US10396078B2Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 27, 2019·9 cites·16 claims
- 0593US10020307B1Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 10, 2018·9 cites·11 claims
- 0693US8828762B2Carbon nanostructure device fabrication utilizing protect layersIBM·Filed 2012·Granted Sep 9, 2014·10 cites·14 claims
- 0793US8440999B2Semiconductor chip with graphene based devices in an interconnect structure of the chipDIMITRAKOPOULOS CHRISTOS D·Filed 2011·Granted May 14, 2013·14 cites·18 claims
- 0892US8877340B2Graphene growth on a non-hexagonal latticeCHU JACK O·Filed 2010·Granted Nov 4, 2014·12 cites·14 claims
- 0991US8541769B2Formation of a graphene layer on a large substrateCHU JACK O·Filed 2010·Granted Sep 24, 2013·10 cites·6 claims
- 1090US10043893B1Post gate silicon germanium channel condensation and method for producing the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 7, 2018·5 cites·5 claims
- 1189US9349864B1Methods for selectively forming a layer of increased dopant concentrationGLOBALFOUNDRIES INC·Filed 2015·Granted May 24, 2016·7 cites·20 claims
- 1287US9123826B1Single crystal source-drain merged by polycrystalline materialIBM·Filed 2014·Granted Sep 1, 2015·8 cites·20 claims
- 1387US8940595B2Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levelsIBM·Filed 2013·Granted Jan 27, 2015·8 cites·20 claims
- 1487US8658488B2Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chipIBM·Filed 2013·Granted Feb 25, 2014·6 cites·20 claims
- 1584US9698226B1Recess liner for silicon germanium fin formationGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·3 cites·15 claims
- 1683US10204984B1Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicideGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 12, 2019·3 cites·20 claims
- 1783US9287399B2Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levelsIBM·Filed 2014·Granted Mar 15, 2016·5 cites·16 claims
- 1881US10756184B2Faceted epitaxial source/drain regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 25, 2020·3 cites·17 claims
- 1981US9768288B2Carbon nanostructure device fabrication utilizing protect layersIBM·Filed 2016·Granted Sep 19, 2017·2 cites·7 claims
- 2078US9318608B1Uniform junction formation in FinFETsIBM·Filed 2014·Granted Apr 19, 2016·3 cites·5 claims
- 2175US9882052B2Forming defect-free relaxed SiGe finsGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 30, 2018·2 cites·15 claims
- 2272US9236477B2Graphene transistor with a sublithographic channel widthGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·2 cites·20 claims
- 2372US8476617B2Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angleDIMITRAKOPOULOS CHRISTOS D·Filed 2011·Granted Jul 2, 2013·3 cites·16 claims
- 2470US10741556B2Self-aligned sacrificial epitaxial capping for trench silicideGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 11, 2020·1 cites·12 claims
- 2570US8759824B2Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming sameIBM·Filed 2013·Granted Jun 24, 2014·2 cites·14 claims
- 2669US9466616B2Uniform junction formation in FinFETsGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 11, 2016·1 cites·5 claims
- 2768US10134876B2FinFETs with strained channels and reduced on state resistanceGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 20, 2018·1 cites·15 claims
- 2857US9893154B2Recess liner for silicon germanium fin formationGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 13, 2018·0 cites·7 claims
- 2957US2014374702A1Carbon nanostructure device fabrication utilizing protect layersIBM·Filed 2014·Application pending·0 cites
- 3055US10326007B2Post gate silicon germanium channel condensation and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·0 cites·11 claims
- 3155US9236250B2Formation of a graphene layer on a large substrateGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 12, 2016·0 cites·2 claims
- 3250US10680065B2Field-effect transistors with a grown silicon-germanium channelGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 9, 2020·0 cites·8 claims
- 3350US2018130656A1FORMING DEFECT-FREE RELAXED SiGe FINSGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3450US2012319078A1Graphene growth on a non-hexagonal latticeCHU JACK O·Filed 2012·Application pending·0 cites
- 3548US9722045B2Buffer layer for modulating Vt across devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 1, 2017·0 cites·19 claims
- 3648US2016163707A1Epitaxially grown silicon germanium channel finfet with silicon underlayerGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3746US10236343B2Strain retention semiconductor member for channel SiGe layer of pFETGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·0 cites·12 claims
- 3840US2019221483A1Single work function enablement for silicon nanowire deviceGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 3939US10388654B2Methods of forming a gate-to-source/drain contact structureGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 20, 2019·0 cites·20 claims
- 4039US2019027370A1Shaped cavity for epitaxial semiconductor growthGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 4138US2012112198A1Epitaxial growth of silicon carbide on sapphireCHU JACK O·Filed 2010·Application pending·0 cites
- 4237US9953873B2Methods of modulating the morphology of epitaxial semiconductor materialGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 24, 2018·0 cites·5 claims
- 4335US2017033181A1Methods of forming replacement fins comprised of multiple layers of different semiconductor materialsGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 4422US5607717AApplicator for seed treatment productsTRACE CHEM INC·Filed 1995·Granted Mar 4, 1997·1 cites·3 claims
- 4521US5512099AApplicator for seed treatment productsTRACE CHEM INC·Filed 1994·Granted Apr 30, 1996·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →