Graphene growth on a non-hexagonal lattice

Abstract

A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry.

1 . A structure comprising a graphene layer including at least one graphene monolayer, wherein said graphene layer is located directly on a crystallographic surface having a non-hexagonal symmetry. 
     
     
         2 . The structure of  claim 1 , wherein said crystallographic surface has a rectangular symmetry. 
     
     
         3 . The structure of  claim 1 , wherein said crystallographic surface is a surface of a crystalline semiconductor carbide layer. 
     
     
         4 . The structure of  claim 3 , wherein said crystalline semiconductor carbide layer is a single crystalline silicon carbide layer or a polycrystalline silicon carbide layer having grains, wherein said grains have a same crystallographic orientation and a same surface orientation. 
     
     
         5 . The structure of  claim 4 , wherein said single crystalline silicon carbide layer is a single crystalline silicon carbide layer in beta phase having zinc blende structure. 
     
     
         6 . The structure of  claim 5 , wherein said crystallographic surface is a (100) surface of said single crystalline silicon carbide layer in said beta phase. 
     
     
         7 . The structure of  claim 3 , wherein said crystalline semiconductor carbide layer contacts a surface of a single crystalline semiconductor layer. 
     
     
         8 . The structure of  claim 7 , wherein said crystalline semiconductor carbide layer is a single crystalline silicon carbide layer in beta phase having zinc blende structure or a polycrystalline silicon carbide layer having crystal grains in beta phase having zinc blende structure, and said single crystalline semiconductor layer is a single crystalline silicon layer. 
     
     
         9 . The structure of  claim 8 , wherein said graphene layer contacts a (100) surface of said single crystalline silicon carbide layer in said beta phase, and said single crystalline silicon carbide layer contacts a (100) surface of said single crystalline silicon layer.