Inventor · disambiguated record
Toranosuke Ashizawa
Also filed as: ASHIZAWA TORANOSUKE
25 granted patents·12 pending applications·433 citations·filing 1984–2014
96Inventor score
Top patents by PatentIndex Score
37 records- 0193US6221118B1Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 1997·Granted Apr 24, 2001·123 cites·1 claims
- 0290US6863700B2Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 2001·Granted Mar 8, 2005·37 cites·17 claims
- 0388US8002860B2CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasiveHITACHI CHEMICAL CO LTD·Filed 2009·Granted Aug 23, 2011·12 cites·25 claims
- 0488US6343976B1Abrasive, method of polishing wafer, and method of producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 1998·Granted Feb 5, 2002·60 cites·27 claims
- 0586US6783434B1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 1999·Granted Aug 31, 2004·61 cites·23 claims
- 0685US6615499B1Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 2000·Granted Sep 9, 2003·28 cites·3 claims
- 0771US8616936B2Abrasive, method of polishing target member and process for producing semiconductor deviceYOSHIDA MASATO·Filed 2012·Granted Dec 31, 2013·1 cites·17 claims
- 0871US8137159B2Abrasive, method of polishing target member and process for producing semiconductor deviceYOSHIDA MASATO·Filed 2011·Granted Mar 20, 2012·1 cites·25 claims
- 0971US7115021B2Abrasive, method of polishing target member and process for producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 2002·Granted Oct 3, 2006·8 cites·20 claims
- 1070US7163644B2CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2004·Granted Jan 16, 2007·8 cites·9 claims
- 1170US4542110AProcess for producing zirconium oxide sintered bodyHITACHI CHEMICAL CO LTD·Filed 1984·Granted Sep 17, 1985·20 cites·6 claims
- 1268US8162725B2Abrasive, method of polishing target member and process for producing semiconductor deviceYOSHIDA MASATO·Filed 2007·Granted Apr 24, 2012·1 cites·20 claims
- 1368US7963825B2Abrasive, method of polishing target member and process for producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 2008·Granted Jun 21, 2011·1 cites·21 claims
- 1468US7871308B2Abrasive, method of polishing target member and process for producing semiconductor deviceHITACHI CHEMICAL CO LTD·Filed 2006·Granted Jan 18, 2011·1 cites·30 claims
- 1566US7410409B1Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compoundHITACHI CHEMICAL CO LTD·Filed 2000·Granted Aug 12, 2008·9 cites·19 claims
- 1665US8075800B2Polishing slurry and polishing methodKOYAMA NAOYUKI·Filed 2004·Granted Dec 13, 2011·13 cites·15 claims
- 1764US7708788B2Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 2004·Granted May 4, 2010·6 cites·12 claims
- 1864US6358663B2Fluorescent pattern, process for preparing the same, organic alkali developing solution for forming the same, emulsion developing solution for forming the same and back plate for plasma display using the sameHITACHI CHEMICAL CO LTD·Filed 2001·Granted Mar 19, 2002·4 cites·2 claims
- 1963US7887609B2Polishing slurry for polishing aluminum film and polishing method for polishing aluminum film using the sameHITACHI CHEMICAL CO LTD·Filed 2006·Granted Feb 15, 2011·1 cites·12 claims
- 2058US6194826B1Process for preparing phosphor pattern, phosphor pattern prepared the same and back plate for plasma display panelHITACHI CHEMICAL CO LTD·Filed 1998·Granted Feb 27, 2001·13 cites·25 claims
- 2153US6232024B1Fluorescent pattern, process for preparing the same, organic alkali developing solution for forming the same, emulsion developing solution for forming the same and back plate for plasma display using the sameHITACHI CHEMICAL CO LTD·Filed 1998·Granted May 15, 2001·8 cites·13 claims
- 2252US7867303B2Cerium oxide abrasive and method of polishing substratesHITACHI CHEMICAL CO LTD·Filed 2006·Granted Jan 11, 2011·0 cites·45 claims
- 2352US2006197054A1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2006·Application pending·0 cites
- 2452US2006186372A1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2006·Application pending·0 cites
- 2550US2005269295A1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2005·Application pending·0 cites
- 2648US2010001229A1Cmp slurry for silicon filmHITACHI CHEMICAL CO LTD·Filed 2009·Application pending·0 cites
- 2747US2007169421A1CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasiveKOYAMA NAOYUKI·Filed 2007·Application pending·0 cites
- 2843US2004147206A1CMP abrasive, liquid additive for CMP abrasive and method for polishing substrateHITACHI CHEMICAL CO LTD·Filed 2004·Application pending·0 cites
- 2943US2007175104A1Polishing slurry for silicon oxide, additive liquid and polishing methodHITACHI CHEMICAL CO LTD·Filed 2006·Application pending·0 cites
- 3043US2016359078A1Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, method of producing semiconductor substrate with n-type diffusion layer, and method for producing photovoltaic cell elementHITACHI CHEMICAL CO LTD·Filed 2014·Application pending·0 cites
- 3142US5147851ASuperconducting thick film circuit board, production thereof, thick film superconductor and production thereofHITACHI CHEMICAL CO LTD·Filed 1989·Granted Sep 15, 1992·9 cites·6 claims
- 3241US2008200032A1Polishing method of semiconductor substrateHITACHI CHEMICAL CO LTD·Filed 2008·Application pending·0 cites
- 3341US2002037478A1Fluorescent pattern, process for preparing the same, organic alkali developing solution for forming the same, emulsion developing solution for forming the same and back plate for plasma display using the sameFiled 2001·Application pending·0 cites
- 3441US2007270085A1Chemical mechanical polishing slurry, cmp process and electronic device processOTA RYO·Filed 2007·Application pending·0 cites
- 3539US2015017754A1Composition for forming n-type diffusion layer, method for producing semiconductor substrate having n-type diffusion layer, and method for producing solar cell elementHITACHI CHEMICAL CO LTD·Filed 2013·Application pending·0 cites
- 3635US5238911AOxide superconductor Bi--Sr--Ca--Mg--Ba--Cu--OHITACHI CHEMICAL CO LTD·Filed 1991·Granted Aug 24, 1993·5 cites·1 claims
- 3732US5194421ABi-Pb-Sr-Mg-Ba-Ca-Cu-O oxide superconductors and production thereofHITACHI CHEMICAL CO LTD·Filed 1991·Granted Mar 16, 1993·3 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →