CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive

Abstract

The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

1 . An additive for a CMP abrasive for polishing inorganic insulating films having unevenness on a surface thereof, consisting essentially of an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and containing at least one atom having an unpaired electron in a molecular structure.  
   
   
       2 . The additive for a CMP abrasive for polishing inorganic insulating films having unevenness on a surface thereof according to  claim 1 , wherein said organic polymer is a compound containing either one or both of a nitrogen atom and an oxygen atom in a molecular structure.  
   
   
       3 . The additive for a CMP abrasive for polishing inorganic insulating films having unevenness on a surface thereof according to  claim 1 , wherein said organic polymer is a compound having an adsorption ratio of 50% or more with respect to silicon oxide particles of a specific surface area of 50 m 2 /g dispersed in water of pH 6 to 8.  
   
   
       4 . The additive for a CMP abrasive for polishing inorganic insulating films having unevenness on a surface thereof according to  claim 1 , wherein said organic polymer is a compound having an adsorption ratio of 40% or more with respect to silicon nitride particles of a specific surface area of 3.3 m 2 /g dispersed in water of pH 6 to 8.  
   
   
       5 . The additive for a CMP abrasive for polishing inorganic insulating films having unevenness on a surface thereof according to  claim 1 , wherein said organic polymer is polyvinyl pyrrolidone.  
   
   
       6 . The additive for a CMP abrasive for polishing inorganic insulating films having unevenness on a surface thereof according to  claim 5 , wherein said polyvinyl pyrrolidone has a weight average molecular weight of 5,000 to 1,200,000.