Inventor · disambiguated record
Tomio Katata
Also filed as: KATATA TOMIO · KATATA TOMIO Y
27 granted patents·7 pending applications·677 citations·filing 1997–2012
97Inventor score
Top patents by PatentIndex Score
34 records- 0194US6423192B1Sputtering apparatus and film forming methodTOSHIBA KK·Filed 2000·Granted Jul 23, 2002·91 cites·20 claims
- 0293US6071810AMethod of filling contact holes and wiring grooves of a semiconductor deviceTOSHIBA KK·Filed 1997·Granted Jun 6, 2000·101 cites·2 claims
- 0392US7399706B2Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jul 15, 2008·25 cites·10 claims
- 0492US7351656B2Semiconductor device having oxidized metal film and manufacture method of the sameKABUSHIKI KAIHSA TOSHIBA·Filed 2006·Granted Apr 1, 2008·20 cites·19 claims
- 0592US6673704B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Jan 6, 2004·42 cites·26 claims
- 0692US6566632B1Hot plate and semiconductor device manufacturing method using the sameTOSHIBA KK·Filed 2000·Granted May 20, 2003·59 cites·18 claims
- 0788US6521010B1Filter, filtering frame, and semiconductor device manufacturing method and apparatusTOSHIBA KK·Filed 2000·Granted Feb 18, 2003·33 cites·6 claims
- 0884US7994054B2Semiconductor device having oxidized metal film and manufacture method of the sameTOSHIBA KK·Filed 2007·Granted Aug 9, 2011·6 cites·20 claims
- 0980US7791202B2Semiconductor device having oxidized metal film and manufacture method of the sameTOSHIBA KK·Filed 2008·Granted Sep 7, 2010·4 cites·20 claims
- 1079US8148274B2Semiconductor device having oxidized metal film and manufacture method of the sameWADA JUNICHI·Filed 2008·Granted Apr 3, 2012·4 cites·12 claims
- 1179US6462395B1Semiconductor device and method of producing the sameFUJITSU LTD·Filed 2000·Granted Oct 8, 2002·27 cites·8 claims
- 1277US6500686B2Hot plate and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2001·Granted Dec 31, 2002·20 cites·22 claims
- 1374US6946387B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2003·Granted Sep 20, 2005·11 cites·2 claims
- 1474US6605521B2Method of forming an oxide film on a gate side wall of a gate structureTOSHIBA KK·Filed 2002·Granted Aug 12, 2003·21 cites·19 claims
- 1574US6521927B2Semiconductor device and method for the manufacture thereofTOSHIBA KK·Filed 1998·Granted Feb 18, 2003·41 cites·8 claims
- 1670US6699726B2Semiconductor device and method for the manufacture thereofTOSHIBA KK·Filed 2003·Granted Mar 2, 2004·15 cites·2 claims
- 1770US6140236AHigh throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiringTOSHIBA KK·Filed 1998·Granted Oct 31, 2000·39 cites·15 claims
- 1863US5943601AProcess for fabricating a metallization structureIBM·Filed 1997·Granted Aug 24, 1999·27 cites·22 claims
- 1962US6720253B2Method of manufacturing semiconductor device having an aluminum wiring layerTOSHIBA KK·Filed 2001·Granted Apr 13, 2004·9 cites·13 claims
- 2061US6440843B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2000·Granted Aug 27, 2002·5 cites·3 claims
- 2158US6001718ASemiconductor device having a ternary compound low resistive electrodeTOSHIBA KK·Filed 1997·Granted Dec 14, 1999·22 cites·20 claims
- 2257US6307267B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1998·Granted Oct 23, 2001·19 cites·6 claims
- 2354US6768202B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Jul 27, 2004·5 cites·16 claims
- 2454US6436813B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Aug 20, 2002·5 cites·11 claims
- 2554US6048791ASemiconductor device with electrode formed of conductive layer consisting of polysilicon layer and metal-silicide layer and its manufacturing methodTOSHIBA KK·Filed 1998·Granted Apr 11, 2000·14 cites·36 claims
- 2653US2012152168A1Semiconductor device having oxidized metal film and manufacture method of the sameSAKATA ATSUKO·Filed 2012·Application pending·0 cites
- 2750US2008272494A1Semiconductor deviceTOSHIBA KK·Filed 2008·Application pending·0 cites
- 2845US2008099921A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 2942US6342131B1Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic fieldTOSHIBA KK·Filed 1998·Granted Jan 29, 2002·9 cites·11 claims
- 3042US2008083990A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 3142US2008001298A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 3239US2005148177A1Method and an apparatus for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2004·Application pending·0 cites
- 3338US2005272258A1Method of manufacturing a semiconductor device and semiconductor deviceMORITA TOSHIYUKI·Filed 2005·Application pending·0 cites
- 3433US6313535B1Wiring layer of a semiconductor integrated circuitTOSHIBA KK·Filed 1999·Granted Nov 6, 2001·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →