Semiconductor device

Abstract

A semiconductor device is provided, including: a first barrier metal film provided by a PVD process in a recess formed in at least one insulating film, and containing at least one metal element belonging to any of the groups 4-A, 5-A, and 6-A; a second barrier metal film continuously provided by at least one of CVD and ALD processes on the first barrier metal film without being opened to atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; a third barrier metal film continuously provided by the PVD process on the second barrier metal film without being opened to the atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; and a first Cu film continuously provided on the third barrier metal film without being opened to the atmosphere and thereafter heated.

1 .- 10 . (canceled) 
   
   
       11 . A semiconductor device comprising:
 a first barrier metal film provided by a PVD process in a recess formed in at least one insulating film provided above a substrate, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A;   a second barrier metal film continuously provided by at least one of CVD and ALD processes on the first barrier metal film without being opened to atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A;   a third barrier metal film continuously provided by the PVD process on the second barrier metal film without being opened to the atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; and   a first Cu film continuously provided on the third barrier metal film without being opened to the atmosphere and thereafter heated.   
   
   
       12 . The device according to  claim 11 , further comprising:
 a second Cu film grown by a plating process on the first Cu film using the first Cu film as a seed layer, and buried in the recess before heating of the first Cu film.   
   
   
       13 . The device according to  claim 11 , wherein the third barrier metal film is provided as a single-layer film substantially formed of Ti. 
   
   
       14 . The device according to  claim 13 , wherein the second barrier metal film comprises a single-layer film formed of one material of TiN, TiC, TiO, TiSiN, Ta, TaN, TaC, TaSiN, WN, WNC, WSiN, VN, and NbN, or a stacked film obtained by combining two or more of these single-layer films, and the first and third barrier metal films comprise single-layer films substantially formed of Ti. 
   
   
       15 . The device according to  claim 11 , wherein oxide of Ti is not generated in the vicinity of an interface between the barrier metal film and the first Cu film. 
   
   
       16 . The device according to  claim 11 , wherein heating of the first Cu film is performed at 420° C. or less. 
   
   
       17 . The device according to  claim 11 , wherein the first Cu film is formed at a substrate temperature of 25° C. or more. 
   
   
       18 . The device according to  claim 11 , wherein at least one conductive layer provided on a surface layer portion of the substrate or above the substrate is coated with the insulating film, the surface of the conductive layer is exposed to form the recess in the insulating film, and the first barrier metal film is provided in the recess with contacting the surface of the conductive layer. 
   
   
       19 . The device according to  claim 12 , wherein the first and second Cu films are formed as at least one of a wire integral with a plug, a wire separate from the plug, and a plug alone. 
   
   
       20 . The device according to  claim 12 , wherein the insulating film, the first to third barrier metal films, and the first and second Cu films are stacked and provided into a plurality of layers.