Semiconductor device having oxidized metal film and manufacture method of the same

Abstract

A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

1 .- 20 . (canceled) 
     
     
         21 . A semiconductor manufacturing apparatus comprising:
 a first apparatus having a heat source configured to heat a plurality of substrates; and   a second apparatus connected to the first apparatus and configured to perform a film formation on the substrates,   wherein each of the substrates in which processing with the first apparatus completes is transported one by one to the second apparatus so as to perform the film formation.   
     
     
         22 . The semiconductor manufacturing apparatus of  claim 21 , wherein the first apparatus has a plurality of the heat sources on which the substrates are placed respectively. 
     
     
         23 . The semiconductor manufacturing apparatus of  claim 22 , wherein the heat sources are placed to be vertically superposed. 
     
     
         24 . The semiconductor manufacturing apparatus of  claim 22 , wherein the heat sources are radially placed on a rotatable support body. 
     
     
         25 . The semiconductor manufacturing apparatus of  claim 22 , wherein the heat sources are hot plates. 
     
     
         26 . The semiconductor manufacturing apparatus of  claim 22 , wherein the heat sources are individually isolated in separate vacuums. 
     
     
         27 . The semiconductor manufacturing apparatus of  claim 22 , further comprising a vertically movable support body which connects the heat sources. 
     
     
         28 . The semiconductor manufacturing apparatus of  claim 21 , wherein the heat source surrounds the substrates. 
     
     
         29 . The semiconductor manufacturing apparatus of  claim 28 , wherein the heat source is a heater. 
     
     
         30 . The semiconductor manufacturing apparatus of  claim 28 , further comprising a quartz tube in which a plurality of quartz boards for respectively supporting the substrates are placed inside. 
     
     
         31 . The semiconductor manufacturing apparatus of  claim 28 , further comprising a mechanism that rotates the substrates. 
     
     
         32 . The semiconductor manufacturing apparatus of  claim 21 , wherein the first apparatus is connected to the second apparatus via a transportation room. 
     
     
         33 . The semiconductor manufacturing apparatus of  claim 21 , wherein the second apparatus is a chamber connected to the first apparatus in a cluster tool. 
     
     
         34 . The semiconductor manufacturing apparatus of  claim 21 , wherein each of the first and the second apparatus is one of a plurality of chambers connected to a cluster tool. 
     
     
         35 . The semiconductor manufacturing apparatus of  claim 21 , wherein the second apparatus performs the film formation by atomic layer deposition. 
     
     
         36 . The semiconductor manufacturing apparatus of  claim 21 , wherein the film formation includes forming a barrier metal film. 
     
     
         37 . The semiconductor manufacturing apparatus of  claim 21 , further comprising a third apparatus configured to form a metal film, and the film formation includes forming a barrier metal film. 
     
     
         38 . The semiconductor manufacturing apparatus of  claim 21 , wherein the first apparatus performs a process of degassing of an insulating film. 
     
     
         39 . The semiconductor manufacturing apparatus of  claim 21 , wherein water molecules contained in an insulating film are heated by use of microwaves. 
     
     
         40 . The semiconductor manufacturing apparatus of  claim 21 , wherein the second apparatus is connected to the first apparatus under a continuous vacuum condition.