Inventor · disambiguated record
Tobias Letz
Also filed as: LETZ TOBIAS
10 granted patents·4 pending applications·46 citations·filing 2006–2010
86Inventor score
Top patents by PatentIndex Score
14 records- 0184US7924569B2Semiconductor device comprising an in-chip active heat transfer systemADVANCED MICRO DEVICES INC·Filed 2009·Granted Apr 12, 2011·13 cites·25 claims
- 0277US8193086B2Local silicidation of via bottoms in metallization systems of semiconductor devicesLETZ TOBIAS·Filed 2009·Granted Jun 5, 2012·8 cites·21 claims
- 0374US8426312B2Method of reducing contamination by providing an etch stop layer at the substrate edgeRICHTER RALF·Filed 2006·Granted Apr 23, 2013·5 cites·10 claims
- 0474US7879709B2Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structureGLOBALFOUNDRIES INC·Filed 2008·Granted Feb 1, 2011·6 cites·18 claims
- 0573US7781343B2Semiconductor substrate having a protection layer at the substrate back sideGLOBALFOUNDRIES INC·Filed 2007·Granted Aug 24, 2010·6 cites·20 claims
- 0672US8859398B2Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edgeLETZ TOBIAS·Filed 2010·Granted Oct 14, 2014·3 cites·29 claims
- 0769US7820536B2Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Oct 26, 2010·3 cites·19 claims
- 0864US8323989B2Test system and method of reducing damage in seed layers in metallization systems of semiconductor devicesFEUSTEL FRANK·Filed 2010·Granted Dec 4, 2012·2 cites·15 claims
- 0948US8673087B2Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor deviceFEUSTEL FRANK·Filed 2008·Granted Mar 18, 2014·0 cites·16 claims
- 1044US2009032961A1Semiconductor device having a locally enhanced electromigration resistance in an interconnect structureFEUSTEL FRANK·Filed 2008·Application pending·0 cites
- 1143US2007278484A1Method and test structure for estimating electromigration effects caused by porous barrier materialsFEUSTEL FRANK·Filed 2007·Application pending·0 cites
- 1242US8841140B2Technique for forming a passivation layer without a terminal metalLETZ TOBIAS·Filed 2007·Granted Sep 23, 2014·0 cites·15 claims
- 1342US2007120264A1A semiconductor having a copper-based metallization stack with a last aluminum metal line layerLEHR MATTHIAS·Filed 2006·Application pending·0 cites
- 1436US2010289125A1Enhanced electromigration performance of copper lines in metallization systems of semiconductor devices by surface alloyingFEUSTEL FRANK·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →