Inventor · disambiguated record
Toru Tatsumi
Also filed as: TATSUMI TORU
42 granted patents·7 pending applications·1,247 citations·filing 1991–2010
98Inventor score
Top patents by PatentIndex Score
49 records- 0196US5366917AMethod for fabricating polycrystalline silicon having micro roughness on the surfaceNEC CORP·Filed 1991·Granted Nov 22, 1994·128 cites·8 claims
- 0295US7701018B2Semiconductor device and method for manufacturing sameNEC CORP·Filed 2005·Granted Apr 20, 2010·45 cites·34 claims
- 0394US8269303B2SiGe photodiodeFUJIKATA JUNICHI·Filed 2009·Granted Sep 18, 2012·33 cites·9 claims
- 0493US6030894AMethod for manufacturing a semiconductor device having contact plug made of Si/SiGe/SiNEC CORP·Filed 1998·Granted Feb 29, 2000·131 cites·7 claims
- 0590US5385863AMethod of manufacturing polysilicon film including recrystallization of an amorphous filmNEC CORP·Filed 1992·Granted Jan 31, 1995·128 cites·7 claims
- 0687US7867847B2Method of manufacturing dielectric film that has hafnium-containing and aluminum-containing oxynitrideCANON ANELVA CORP·Filed 2010·Granted Jan 11, 2011·7 cites·9 claims
- 0787US7592674B2Semiconductor device with silicide-containing gate electrode and method of fabricating the sameNEC CORP·Filed 2005·Granted Sep 22, 2009·14 cites·36 claims
- 0887US6665118B2Rear-projection screen and rear-projection image displayMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Dec 16, 2003·21 cites·12 claims
- 0987US6075253AMonocrystalline semiconductor photodetectorNEC CORP·Filed 1998·Granted Jun 13, 2000·82 cites·18 claims
- 1087US5866920ASemiconductor device and manufacturing method of the sameNEC CORP·Filed 1997·Granted Feb 2, 1999·78 cites·16 claims
- 1187US5623243ASemiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grainNEC CORP·Filed 1995·Granted Apr 22, 1997·85 cites·15 claims
- 1285US7612416B2Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the sameNEC CORP·Filed 2004·Granted Nov 3, 2009·36 cites·14 claims
- 1384US8030694B2Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygenCANON ANELVA CORP·Filed 2010·Granted Oct 4, 2011·5 cites·17 claims
- 1484US5571735AMethod of manufacturing a semiconducter device capable of easily forming metal silicide films on source and drain regionsNEC CORP·Filed 1995·Granted Nov 5, 1996·62 cites·9 claims
- 1583US7968463B2Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layerRENESAS ELECTRONICS CORP·Filed 2007·Granted Jun 28, 2011·11 cites·31 claims
- 1682US8178934B2Dielectric film with hafnium aluminum oxynitride filmKITANO NAOMU·Filed 2010·Granted May 15, 2012·5 cites·1 claims
- 1782US6459126B1Semiconductor device including a MIS transistorNEC CORP·Filed 2001·Granted Oct 1, 2002·33 cites·17 claims
- 1882US6091081AInsulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating filmNEC CORP·Filed 1997·Granted Jul 18, 2000·55 cites·13 claims
- 1981US7354622B2Method for forming thin film and apparatus for forming thin filmTOKYO ELECTRON LTD·Filed 2001·Granted Apr 8, 2008·21 cites·6 claims
- 2076US8053311B2Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygenCANON ANELVA CORP·Filed 2010·Granted Nov 8, 2011·3 cites·8 claims
- 2175US5234862AThin film deposition methodANELVA CORP·Filed 1991·Granted Aug 10, 1993·34 cites·28 claims
- 2273US8415753B2Semiconductor device and method of manufacturing the sameNAKAGAWA TAKASHI·Filed 2010·Granted Apr 9, 2013·4 cites·13 claims
- 2373US8288234B2Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric filmSEINO TAKUYA·Filed 2010·Granted Oct 16, 2012·4 cites·21 claims
- 2473US5909059ASemiconductor device having contact plug and method for manufacturing the sameNEC CORP·Filed 1997·Granted Jun 1, 1999·37 cites·8 claims
- 2569US6372628B1Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor deviceNEC CORP·Filed 2000·Granted Apr 16, 2002·11 cites·3 claims
- 2666US8203176B2Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectricNAKAGAWA TAKASHI·Filed 2008·Granted Jun 19, 2012·2 cites·27 claims
- 2765US5895948ASemiconductor device and fabrication process thereofNEC CORP·Filed 1997·Granted Apr 20, 1999·32 cites·14 claims
- 2863US6077355AApparatus and method for depositing a film on a substrate by chemical vapor depositionNEC CORP·Filed 1997·Granted Jun 20, 2000·24 cites·8 claims
- 2963US5723379AMethod for fabricating polycrystalline silicon having micro roughness on the surfaceNEC CORP·Filed 1994·Granted Mar 3, 1998·19 cites·22 claims
- 3059US7476916B2Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide filmNEC CORP·Filed 2004·Granted Jan 13, 2009·6 cites·8 claims
- 3158US6071797AMethod for forming amorphous carbon thin film by plasma chemical vapor depositionNEC CORP·Filed 1996·Granted Jun 6, 2000·22 cites·16 claims
- 3256US6790741B1Process for producing a semiconductor deviceNEC CORP·Filed 2000·Granted Sep 14, 2004·5 cites·59 claims
- 3353US2008134976A1Apparatus for Forming Thin FilmTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 3452US6573211B2Metal oxide dielectric filmNEC CORP·Filed 2001·Granted Jun 3, 2003·5 cites·18 claims
- 3549US7679148B2Semiconductor device, production method and production device thereofNEC CORP·Filed 2003·Granted Mar 16, 2010·4 cites·1 claims
- 3647US5691249AMethod for fabricating polycrystalline silicon having micro roughness on the surfaceNEC CORP·Filed 1995·Granted Nov 25, 1997·11 cites·20 claims
- 3745US6180531B1Semiconductor manufacturing methodNEC CORP·Filed 1999·Granted Jan 30, 2001·10 cites·15 claims
- 3842US8524617B2Methods for manufacturing dielectric filmsNAKAGAWA TAKASHI·Filed 2010·Granted Sep 3, 2013·0 cites·12 claims
- 3940US2010084713A1Semiconductor device manufacturing method and semiconductor deviceNEC CORP·Filed 2007·Application pending·0 cites
- 4039US5441012AThin film deposition method for waferANELVA CORP·Filed 1994·Granted Aug 15, 1995·12 cites·13 claims
- 4137US6121120AMethod for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layerNEC CORP·Filed 1998·Granted Sep 19, 2000·6 cites·51 claims
- 4237US6060391AVapor phase growth methodNEC CORP·Filed 1997·Granted May 9, 2000·6 cites·10 claims
- 4337US5946570AProcess for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layerNEC CORP·Filed 1997·Granted Aug 31, 1999·4 cites·12 claims
- 4437US2003175425A1Vapor phase deposition method for metal oxide dielectric filmFiled 2001·Application pending·0 cites
- 4537US2004058492A1Vapor growth method for metal oxide dielectric film and pzt filmFiled 2002·Application pending·0 cites
- 4636US2007187682A1Semiconductor device having fin-type effect transistorNEC CORP·Filed 2004·Application pending·0 cites
- 4736US2007075372A1Semiconductor device and manufacturing process thereforNEC CORP·Filed 2004·Application pending·0 cites
- 4834US2012199919A1Semiconductor device and method of manufacturing the sameNAKAGAWA TAKASHI·Filed 2010·Application pending·0 cites
- 4933US5284521AVacuum film forming apparatusANELVA CORP·Filed 1991·Granted Feb 8, 1994·6 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →