Inventor · disambiguated record
Tomosuke Yoshida
Also filed as: YOSHIDA TOMOSUKE
7 granted patents·4 pending applications·77 citations·filing 1997–2015
83Inventor score
Top patents by PatentIndex Score
11 records- 0175US6162708AMethod for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Dec 19, 2000·47 cites·24 claims
- 0271US10460983B2Method for manufacturing a bonded SOI waferSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 29, 2019·2 cites·1 claims
- 0366US7270708B2Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial waferSHINETSU HANDOTAI KK·Filed 2002·Granted Sep 18, 2007·8 cites·4 claims
- 0464US6599603B1Silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 29, 2003·9 cites·12 claims
- 0558US7713851B2Method of manufacturing silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2005·Granted May 11, 2010·1 cites·4 claims
- 0646US2009038540A1Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer Manufactured by this MethodSHINETSU HANDOTAI KK·Filed 2006·Application pending·0 cites
- 0742US5841532AMethod for evaluating oxygen concentrating in semiconductor silicon single crystalSHINETSU HANDOTAI KK·Filed 1997·Granted Nov 24, 1998·10 cites·16 claims
- 0838US2006281283A1Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing methodSHINETSU HANDOTAI KK·Filed 2004·Application pending·0 cites
- 0938US2007269338A1Silicon Epitaxial Wafer and Manufacturing Method ThereofSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 1037US2015011079A1Method for manufacturing silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2013·Application pending·0 cites
- 1132US8697547B2Method for manufacturing silicon epitaxial waferYOSHIDA TOMOSUKE·Filed 2010·Granted Apr 15, 2014·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →