Inventor · disambiguated record
Tom Zhong
Also filed as: ZHONG TOM
58 granted patents·4 pending applications·1,049 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD16HEADWAY TECH INC12MAGIC TECHNOLOGIES INC8ZHONG TOM6ASML HOLDING NV5
Top patents by PatentIndex Score
62 records- 0198US10069064B1Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the sameHEADWAY TECH INC·Filed 2017·Granted Sep 4, 2018·59 cites·24 claims
- 0298US7936027B2Method of MRAM fabrication with zero electrical shortingMAGIC TECHNOLOGIES INC·Filed 2008·Granted May 3, 2011·79 cites·19 claims
- 0398US7476919B2MRAM cell structure and method of fabricationHEADWAY TECHNOLOGIES INC·Filed 2006·Granted Jan 13, 2009·102 cites·12 claims
- 0498US7045368B2MRAM cell structure and method of fabricationAPPLIED SPINTRONICS INC·Filed 2004·Granted May 16, 2006·132 cites·22 claims
- 0597US8772051B1Fabrication method for embedded magnetic memoryHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Jul 8, 2014·41 cites·17 claims
- 0697US7863060B2Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devicesMAGIC TECHNOLOGIES INC·Filed 2009·Granted Jan 4, 2011·85 cites·22 claims
- 0796US7122386B1Method of fabricating contact pad for magnetic random access memoryMAGIC TECHNOLOGIES INC·Filed 2005·Granted Oct 17, 2006·40 cites·20 claims
- 0895US11527711B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 0995US10520818B1Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·21 claims
- 1095US8933542B2Method to reduce magnetic film stress for better yieldHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Jan 13, 2015·12 cites·6 claims
- 1195US8722543B2Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devicesBELEN RODOLFO·Filed 2010·Granted May 13, 2014·79 cites·20 claims
- 1295US8324698B2High density spin-transfer torque MRAM processZHONG TOM·Filed 2011·Granted Dec 4, 2012·30 cites·3 claims
- 1394US9972777B1MTJ device process/integration method with pre-patterned seed layerHEADWAY TECH INC·Filed 2017·Granted May 15, 2018·11 cites·18 claims
- 1494US9608200B2Hybrid metallic hard mask stack for MTJ etchingHEADWAY TECH INC·Filed 2015·Granted Mar 28, 2017·12 cites·6 claims
- 1594US8183061B2High density spin-transfer torque MRAM processZHONG TOM·Filed 2011·Granted May 22, 2012·21 cites·11 claims
- 1693US8105948B2Use of CMP to contact a MTJ structure without forming a viaZHONG ADAM·Filed 2008·Granted Jan 31, 2012·41 cites·14 claims
- 1793US7884433B2High density spin-transfer torque MRAM processMAGIC TECHNOLOGIES INC·Filed 2008·Granted Feb 8, 2011·25 cites·9 claims
- 1892US8803293B2Method to reduce magnetic film stress for better yieldZHONG TOM·Filed 2012·Granted Aug 12, 2014·12 cites·8 claims
- 1991US8133745B2Method of magnetic tunneling layer processes for spin-transfer torque MRAMZHONG TOM·Filed 2007·Granted Mar 13, 2012·23 cites·24 claims
- 2090US8524511B1Method to connect a magnetic device to a CMOS transistorZHONG TOM·Filed 2012·Granted Sep 3, 2013·13 cites·20 claims
- 2190US6327793B1Method for two dimensional adaptive process control of critical dimensions during spin coating processSILICON VALLEY GROUP·Filed 2000·Granted Dec 11, 2001·28 cites·48 claims
- 2289US10103322B1Method to remove sidewall damage after MTJ etchingHEADWAY TECH INC·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 2389US6662466B2Method for two dimensional adaptive process control of critical dimensions during spin coating processASML HOLDINGS N V·Filed 2001·Granted Dec 16, 2003·24 cites·48 claims
- 2486US11430945B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·4 cites·20 claims
- 2585US12207566B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 2685US10944049B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 9, 2021·2 cites·16 claims
- 2784US8969982B2Bottom electrode for MRAM deviceXIAO RONGFU·Filed 2010·Granted Mar 3, 2015·4 cites·7 claims
- 2883US12402539B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2982US11785864B2MTJ device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·19 claims
- 3081US6468586B1Environment exchange control for material on a wafer surfaceSILICON VALLEY GROUP·Filed 2000·Granted Oct 22, 2002·15 cites·12 claims
- 3180US6254936B1Environment exchange control for material on a wafer surfaceSILICON VALLEY GROUP·Filed 1998·Granted Jul 3, 2001·33 cites·22 claims
- 3279US11715491B2Method of ultra-fine critical dimension patterning for magnetic head devicesHEADWAY TECH INC·Filed 2021·Granted Aug 1, 2023·1 cites·17 claims
- 3379US10446741B2Multiple hard mask patterning to fabricate 20nm and below MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 15, 2019·2 cites·20 claims
- 3479US6844027B1Environment exchange control for material on a wafer surfaceASML HOLDING NV·Filed 2000·Granted Jan 18, 2005·13 cites·7 claims
- 3578US10854809B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·1 cites·20 claims
- 3678US7804706B2Bottom electrode mask design for ultra-thin interlayer dielectric approach in MRAM device fabricationMAGIC TECHNOLOGIES INC·Filed 2008·Granted Sep 28, 2010·7 cites·20 claims
- 3778US2025169373A1Mtj device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3877US11963457B2MTJ device performance by controlling device shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 3977US8273666B2Process to fabricate bottom electrode for MRAM deviceXIAO RONGFU·Filed 2010·Granted Sep 25, 2012·3 cites·9 claims
- 4076US6780461B2Environment exchange control for material on a wafer surfaceASML HOLDING NV·Filed 2001·Granted Aug 24, 2004·16 cites·5 claims
- 4175US10475987B1Method for fabricating a magnetic tunneling junction (MTJ) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·15 claims
- 4275US2025226003A1Method Of Ultra-Fine Critical Dimension Patterning For Magnetic Head DevicesHEADWAY TECH INC·Filed 2025·Application pending·0 cites
- 4374US7919407B1Method of high density field induced MRAM processMAGIC TECHNOLOGIES INC·Filed 2009·Granted Apr 5, 2011·6 cites·28 claims
- 4473US9880473B2Surface treatment method for dielectric anti-reflective coating (DARC) to shrink photoresist critical dimension (CD)HEADWAY TECH INC·Filed 2016·Granted Jan 30, 2018·1 cites·20 claims
- 4573US6977098B2Method of uniformly coating a substrateASML HOLDING NV·Filed 2001·Granted Dec 20, 2005·17 cites·5 claims
- 4672US12310245B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 4772US12254908B2System for controlling a critical dimension (CD) uniformity of a magnetic head deviceHEADWAY TECH INC·Filed 2023·Granted Mar 18, 2025·0 cites·17 claims
- 4871US11723286B2STT-MRAM heat sink and magnetic shield structure design for more robust read/write performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 4971US7508700B2Method of magnetic tunneling junction pattern layout for magnetic random access memoryMAGIC TECHNOLOGIES INC·Filed 2007·Granted Mar 24, 2009·11 cites·20 claims
- 5070US11573494B2Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·0 cites·20 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →