Inventor · disambiguated record
Travis J. Anderson
Also filed as: ANDERSON TRAVIS · ANDERSON TRAVIS J · ANDERSON TRAVIS JAY
55 granted patents·14 pending applications·246 citations·filing 2006–2025
98Inventor score
Top patents by PatentIndex Score
69 records- 0197US9246305B1Light-emitting devices with integrated diamondKUB FRANCIS J·Filed 2015·Granted Jan 26, 2016·15 cites·12 claims
- 0296US11201058B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2020·Granted Dec 14, 2021·6 cites·8 claims
- 0395US8900939B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2014·Granted Dec 2, 2014·17 cites·5 claims
- 0494US9006791B2III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2014·Granted Apr 14, 2015·12 cites·15 claims
- 0594US8384129B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlUS NAVY·Filed 2010·Granted Feb 26, 2013·19 cites·25 claims
- 0693US11415518B2Mapping and evaluating GaN wafers for vertical device applicationsUS GOV SEC NAVY·Filed 2020·Granted Aug 16, 2022·3 cites·12 claims
- 0793US9543168B2Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditionsUS NAVY·Filed 2016·Granted Jan 10, 2017·11 cites·30 claims
- 0893US8872159B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2012·Granted Oct 28, 2014·8 cites·29 claims
- 0993US8753468B2Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substratesCALDWELL JOSHUA D·Filed 2010·Granted Jun 17, 2014·30 cites·6 claims
- 1092US11996840B1Light controlled switch moduleUS GOV SEC NAVY·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 1192US9196614B2Inverted III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2015·Granted Nov 24, 2015·7 cites·15 claims
- 1291US8518808B2Defects annealing and impurities activation in III-nitride compoundFEIGELSON BORIS N·Filed 2011·Granted Aug 27, 2013·17 cites·37 claims
- 1391US8501531B2Method of forming graphene on a surfaceKUB FRANCIS J·Filed 2012·Granted Aug 6, 2013·10 cites·12 claims
- 1488US11532478B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2021·Granted Dec 20, 2022·1 cites·18 claims
- 1588US9159641B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2014·Granted Oct 13, 2015·8 cites·8 claims
- 1687US9685513B2Semiconductor structure or device integrated with diamondKUB FRANCIS J·Filed 2013·Granted Jun 20, 2017·9 cites·20 claims
- 1786US9327982B2Method of forming graphene on a surfaceKUB FRANCIS J·Filed 2013·Granted May 3, 2016·6 cites·8 claims
- 1886US9111786B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Aug 18, 2015·4 cites·8 claims
- 1986US9029833B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2014·Granted May 12, 2015·3 cites·15 claims
- 2086US8647918B2Formation of graphene on a surfaceKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·14 claims
- 2185US9466684B2Transistor with diamond gateUS NAVY·Filed 2016·Granted Oct 11, 2016·4 cites·7 claims
- 2285US9236432B2Graphene base transistor with reduced collector areaKUB FRANCIS J·Filed 2014·Granted Jan 12, 2016·6 cites·14 claims
- 2385US9018056B2Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Apr 28, 2015·4 cites·5 claims
- 2485US8648390B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·31 claims
- 2584US9305858B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2015·Granted Apr 5, 2016·4 cites·20 claims
- 2683US9331163B2Transistor with diamond gateKOEHLER ANDREW D·Filed 2014·Granted May 3, 2016·8 cites·11 claims
- 2782US10611010B1Sliding center of gravity hammerANDERSON TRAVIS JAY·Filed 2017·Granted Apr 7, 2020·4 cites·9 claims
- 2880US11817318B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2023·Granted Nov 14, 2023·0 cites·9 claims
- 2980US9960266B2Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistorsUS NAVY·Filed 2017·Granted May 1, 2018·3 cites·27 claims
- 3080US2025338640A1Low resistance light controlled semiconductor switch (lcss)US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 3178US12376388B2Low resistance photoconductive semiconductor switch (PCSS)US GOV SEC NAVY·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 3278US9590081B2Method of making a graphene base transistor with reduced collector areaUS NAVY·Filed 2015·Granted Mar 7, 2017·2 cites·4 claims
- 3378US9490356B2Growth of high-performance III-nitride transistor passivation layer for GaN electronicsUS NAVY·Filed 2016·Granted Nov 8, 2016·2 cites·17 claims
- 3477US9275998B2Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channelKUB FRANCIS J·Filed 2014·Granted Mar 1, 2016·2 cites·19 claims
- 3577US2024364183A1Electric MotorPARKER HANNIFIN CORP·Filed 2024·Application pending·0 cites
- 3673US10777644B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2018·Granted Sep 15, 2020·1 cites·15 claims
- 3772US9196703B2Selective deposition of diamond in thermal viasNORTHROP GRUMMAN SYSTEMS CORP·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 3871US2022254639A1GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the SameUS GOV SEC NAVY·Filed 2022·Application pending·0 cites
- 3970US10494738B2Growth of crystalline materials on two-dimensional inert materialsUS GOV SEC NAVY·Filed 2019·Granted Dec 3, 2019·0 cites·3 claims
- 4068US10312175B1Diamond air bridge for thermal management of high power devicesUS NAVY·Filed 2018·Granted Jun 4, 2019·1 cites·14 claims
- 4165US11342420B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2020·Granted May 24, 2022·0 cites·16 claims
- 4264US10266963B2Growth of crystalline materials on two-dimensional inert materialsNEPAL NEERAJ·Filed 2014·Granted Apr 23, 2019·0 cites·4 claims
- 4363US12068660B2Electric motorPARKER HANNIFIN CORP·Filed 2020·Granted Aug 20, 2024·0 cites·18 claims
- 4462US12476111B2Selective area diffusion doping of III-N materialsUS GOV SEC NAVY·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 4561US12512370B2Neural network based prediction of semiconductor device responseUS GOV SEC NAVY·Filed 2022·Granted Dec 30, 2025·0 cites·15 claims
- 4660US11634834B2Diamond on nanopatterned substrateUS GOV SEC NAVY·Filed 2021·Granted Apr 25, 2023·0 cites·7 claims
- 4759US2020230794A1Sliding center of gravity hammerANDERSON TRAVIS JAY·Filed 2020·Application pending·0 cites
- 4857US9102046B2Hand tool impacting device with floating pin mechanismMATTSON CHRISTOPHER·Filed 2011·Granted Aug 11, 2015·2 cites·20 claims
- 4957US2024234139A9Diamond-Capped Gallium Oxide TransistorUS GOV SEC NAVY·Filed 2023·Application pending·0 cites
- 5056US10158009B2Method of making a graphene base transistor with reduced collector areaUS NAVY·Filed 2017·Granted Dec 18, 2018·0 cites·3 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →