Inventor · disambiguated record
Tristan A. Tronic
Also filed as: TRONIC TRISTAN · TRONIC TRISTAN A
28 granted patents·35 pending applications·33 citations·filing 2015–2024
93Inventor score
Top patents by PatentIndex Score
63 records- 0198US11444024B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2020·Granted Sep 13, 2022·10 cites·30 claims
- 0295US12027458B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0395US11764306B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
- 0491US10937689B2Self-aligned hard masks with converted linersINTEL CORP·Filed 2016·Granted Mar 2, 2021·7 cites·20 claims
- 0588US11004982B2Gate for a transistorINTEL CORP·Filed 2017·Granted May 11, 2021·5 cites·20 claims
- 0685US11152514B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2017·Granted Oct 19, 2021·3 cites·25 claims
- 0784US12396254B2Stacked 2D CMOS with inter metal layersINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 0883US12482744B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2024·Granted Nov 25, 2025·0 cites·19 claims
- 0982US10256141B2Maskless air gap to prevent via punch throughINTEL CORP·Filed 2015·Granted Apr 9, 2019·3 cites·20 claims
- 1081US2025142935A1Self-aligned gate endcap (sage) architectures with reduced capINTEL CORP·Filed 2024·Application pending·0 cites
- 1180US12119409B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 1280US2025022936A1Self-aligned gate endcap (sage) architectures with reduced capINTEL CORP·Filed 2024·Application pending·0 cites
- 1376US2024038661A1Interconnects having a portion without a liner material and related structures, devices, and methodsINTEL CORP·Filed 2023·Application pending·0 cites
- 1474US11837542B2Interconnects having a portion without a liner material and related structures, devices, and methodsINTEL CORP·Filed 2022·Granted Dec 5, 2023·0 cites·25 claims
- 1572US12087836B2Contact over active gate structures with metal oxide-caped contacts to inhibit shortingINTEL CORP·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 1670US11869894B2Metallization structures for stacked device connectivity and their methods of fabricationINTEL CORP·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 1766US11742429B2Thin-film transistors with low contact resistanceINTEL CORP·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1865US2022310818A1Self-aligned gate endcap (sage) architectures with reduced capINTEL CORP·Filed 2021·Application pending·0 cites
- 1958US10971394B2Maskless air gap to prevent via punch throughINTEL CORP·Filed 2019·Granted Apr 6, 2021·0 cites·15 claims
- 2057US11264325B2Interconnects having a portion without a liner material and related structures, devices, and methodsINTEL CORP·Filed 2017·Granted Mar 1, 2022·0 cites·27 claims
- 2157US2025140543A1Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon FilmsINTEL CORP·Filed 2023·Application pending·0 cites
- 2257US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 2357US2025112155A1Conformal coatings with spatially defined surface energies for die-to-wafer self-alignment assisted assemblyINTEL CORP·Filed 2023·Application pending·0 cites
- 2456US11430814B2Metallization structures for stacked device connectivity and their methods of fabricationINTEL CORP·Filed 2018·Granted Aug 30, 2022·0 cites·25 claims
- 2556US2025311636A1Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversionINTEL CORP·Filed 2024·Application pending·0 cites
- 2656US2025112122A1Backside power gatingINTEL CORP·Filed 2023·Application pending·0 cites
- 2756US2025107147A1Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 2856US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 2956US2025311639A1Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effectINTEL CORP·Filed 2024·Application pending·0 cites
- 3055US11837644B2Contact over active gate structures with metal oxide-caped contacts to inhibit shortingINTEL CORP·Filed 2019·Granted Dec 5, 2023·0 cites·19 claims
- 3155US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 3255US2025006433A1Thin hafnium-zirconium oxide films having large grain size for ferroelectric capacitorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3354US11189733B2Thin-film transistors with low contact resistanceINTEL CORP·Filed 2018·Granted Nov 30, 2021·0 cites·15 claims
- 3454US2024222441A1Selective gate oxide formation on 2d material based transistor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 3554US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 3653US11300885B2EUV phase-shift SRAF masks by means of embedded phase shift layersINTEL CORP·Filed 2018·Granted Apr 12, 2022·0 cites·24 claims
- 3753US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3853US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3953US2024105588A1Integrated circuit (ic) device with multilayer metal lineINTEL CORP·Filed 2022·Application pending·0 cites
- 4052US11769814B2Device including air gapping of gate spacers and other dielectrics and process for providing suchINTEL CORP·Filed 2019·Granted Sep 26, 2023·0 cites·9 claims
- 4152US2024063071A1Inorganic material deposition for inter-die fill in multi-chip composite structuresINTEL CORP·Filed 2022·Application pending·0 cites
- 4252US2024114696A1Improved replacement electrode process for 3d ferroelectric memoryINTEL CORP·Filed 2022·Application pending·0 cites
- 4352US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4451US2024222482A1Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel regionINTEL CORP·Filed 2022·Application pending·0 cites
- 4551US2024355934A1Integrated circuits with monolayer tmd channel and multilayer tmd source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 4651US2023402499A1High density metal layers in electrode stacks for transition metal oxide dielectric capacitorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4751US2024120415A1Technologies for atomic layer deposition for ferroelectric transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4850US2024222485A1Transfer-free 2d fet and fefet device fabrication by 2d material growth in superlattice with nitridesINTEL CORP·Filed 2022·Application pending·0 cites
- 4950US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 5050US2023420364A1Microelectronic die with two dimensional (2d) complementary metal oxide semiconductor devices in an interconnect stack thereofINTEL CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →