Inventor · disambiguated record
Tsung-Che Tsai
Also filed as: TSAI TSUNG CHE
42 granted patents·4 pending applications·114 citations·filing 2012–2024
97Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD8GLOBALFOUNDRIES US INC8TAIWAN SEMICONDUCTOR MFG8TAIWAN SEMICONDUCTOR MFG CO LTD7GLOBALFOUNDRIES INC5
Top patents by PatentIndex Score
46 records- 0195US9214540B2N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)TAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 15, 2015·19 cites·10 claims
- 0292US8963200B2Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protectionLEE JAM-WEM·Filed 2012·Granted Feb 24, 2015·13 cites·19 claims
- 0391US10381826B2Integrated circuit electrostatic discharge protectionGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Aug 13, 2019·5 cites·8 claims
- 0490US10096587B1Fin-based diode structures with a realigned feature layoutGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 0590US10032761B1Electronic devices with tunable electrostatic discharge protection and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 24, 2018·9 cites·18 claims
- 0689US9887275B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 6, 2018·4 cites·20 claims
- 0788US10290626B1High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted May 14, 2019·5 cites·18 claims
- 0887US9209302B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etchingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 0987US8809961B2Electrostatic discharge (ESD) guard ring protective structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 19, 2014·7 cites·20 claims
- 1086US8587071B2Electrostatic discharge (ESD) guard ring protective structureTSAI TSUNG-CHE·Filed 2012·Granted Nov 19, 2013·10 cites·11 claims
- 1185US10037988B1High voltage PNP using isolation for ESD and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 31, 2018·5 cites·20 claims
- 1282US10134726B2Diode string implementation for electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·20 claims
- 1381US9548367B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 17, 2017·2 cites·20 claims
- 1480US9368629B2Diode structure compatible with FinFET processTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·2 cites·20 claims
- 1579US9741849B1Integrated circuits resistant to electrostatic discharge and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Aug 22, 2017·3 cites·17 claims
- 1678US8610220B2Semiconductor device with self-aligned interconnectsCHIH YUE-DER·Filed 2012·Granted Dec 17, 2013·4 cites·19 claims
- 1775US10361293B1Vertical fin-type devices and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·16 claims
- 1875US10340266B2ESD protection circuit and method of making the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 2, 2019·2 cites·8 claims
- 1975US9576945B2Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·2 cites·20 claims
- 2074US11335674B2Diode triggered silicon controlled rectifier (SCR) with hybrid diodesGLOBALFOUNDRIES US INC·Filed 2019·Granted May 17, 2022·1 cites·20 claims
- 2173US2025087614A1Bump coplanarity for semiconductor device assembly and methods of manufacturing the sameMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2272US12154879B2Bump coplanarity for semiconductor device assembly and methods of manufacturing the sameMICRON TECHNOLOGY INC·Filed 2023·Granted Nov 26, 2024·0 cites·19 claims
- 2372US9093492B2Diode structure compatible with FinFET processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·2 cites·20 claims
- 2470US11769767B2Diode triggered silicon controlled rectifierGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 26, 2023·0 cites·16 claims
- 2569US11791626B2Electrostatic discharge clamp structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 2667US10032765B1Integrated circuits with electrostatic discharge protection and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 2766US9922969B1Integrated circuits having transistors with high holding voltage and methods of producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Mar 20, 2018·1 cites·19 claims
- 2865US12068308B2Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor wellGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 2962US11742309B2Bump coplanarity for semiconductor device assembly and methods of manufacturing the sameMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 29, 2023·0 cites·20 claims
- 3062US11444076B2Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor wellGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 13, 2022·0 cites·14 claims
- 3159US2024371824A1Plasma dicing for semiconductor device fabricationMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3258US11810822B2Apparatuses and methods including patterns in scribe regions of semiconductor devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 7, 2023·0 cites·16 claims
- 3357US11171132B2Bi-directional breakdown silicon controlled rectifiersGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 9, 2021·0 cites·18 claims
- 3456US9601627B2Diode structure compatible with FinFET processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·0 cites·20 claims
- 3555US11289471B2Electrostatic discharge deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
- 3655US9484338B2Diode string implementation for electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 1, 2016·0 cites·14 claims
- 3754US11201466B2Electrostatic discharge clamp structuresGLOBALFOUNDRIES US INC·Filed 2018·Granted Dec 14, 2021·0 cites·18 claims
- 3853US8906767B2Semiconductor device with self-aligned interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 9, 2014·0 cites·20 claims
- 3949US9929143B2N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 27, 2018·0 cites·20 claims
- 4048US2024129291A1Cross-Domain Secure Connect Transmission MethodNAT APPLIED RES LABORATORIES·Filed 2023·Application pending·0 cites
- 4145US9236733B2Electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 12, 2016·0 cites·18 claims
- 4244US10692852B2Silicon-controlled rectifiers with wells laterally isolated by trench isolation regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 4344US10541236B2Electrostatic discharge devices with reduced capacitanceGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 21, 2020·0 cites·14 claims
- 4444US2014028466A1Method and server for monitoring energy sourceHON HAI PREC IND CO LTD·Filed 2013·Application pending·0 cites
- 4543US9209265B2ESD devices comprising semiconductor finsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 8, 2015·0 cites·20 claims
- 4640US10170459B1Methods for an ESD protection circuit including a floating ESD nodeGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jan 1, 2019·0 cites·11 claims
Join the waitlist — get patent alerts
Get an alert when Tsung-Che Tsai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →