Inventor · disambiguated record
Tuoh Bin Ng
Also filed as: NG TUOH-BIN
14 granted patents·5 pending applications·81 citations·filing 1999–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11NOVA CRYSTALS INC4SU JIE2APPLIED MATERIALS INC1KANG SANG WON1
Top patents by PatentIndex Score
19 records- 0195US9953875B1Contact resistance control in epitaxial structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 24, 2018·22 cites·20 claims
- 0294US11823949B2FinFet with source/drain regions comprising an insulator layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 0393US10170370B2Contact resistance control in epitaxial structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·10 cites·20 claims
- 0491US2025357189A1Method for forming finfet with source/drain regions comprising an insulator layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0586US9196795B2Formation of group III-V material layers on patterned substratesSU JIE·Filed 2014·Granted Nov 24, 2015·6 cites·5 claims
- 0682US12469744B2Method for forming FinFET with source/drain regions comprising an insulator layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 0782US10340190B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·3 cites·20 claims
- 0881US12243784B2Silicon phosphide semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 0978US6199748B1Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materialsNOVA CRYSTALS INC·Filed 1999·Granted Mar 13, 2001·36 cites·16 claims
- 1075US11004725B2Method of forming a FinFET device with gaps in the source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·1 cites·20 claims
- 1171US11749567B2Silicon phosphide semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 1264US8765501B2Formation of group III-V material layers on patterned substratesSU JIE·Filed 2011·Granted Jul 1, 2014·1 cites·5 claims
- 1362US11069578B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 1454US9303318B2Multiple complementary gas distribution assembliesAPPLIED MATERIALS INC·Filed 2012·Granted Apr 5, 2016·0 cites·19 claims
- 1547US10991630B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 1639US2012235115A1Growth of iii-v led stacks using nano masksKANG SANG WON·Filed 2012·Application pending·0 cites
- 1738US2001052535A1Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materialsNOVA CRYSTALS INC·Filed 2001·Application pending·0 cites
- 1835US2002068373A1Method for fabricating light emitting diodesNOVA CRYSTALS INC·Filed 2000·Application pending·0 cites
- 1934US2002070125A1Method for lift-off of epitaxially grown semiconductors by electrochemical anodic etchingNOVA CRYSTALS INC·Filed 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →